Hydrogenated amorphous silicon thin-film transistor arrays fabricated by digital lithography

A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 /spl times/ 64 pixel (300 /spl mu/m pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of /spl sim/3.5 V, carrier mobility of 0.7 cm/sup 2//V/spl middot/s, subthreshold slope of 0.76 V/decade, and an on/off ratio of 10/sup 8/.     

Carbon-nanotube-based electrochemical double-layer capacitor technologies for spaceflight applications

Electrochemical double-layer capacitors, or supercapacitors, have tremendous potential as high-power energy sources for use in low-weight hybrid systems for space exploration. Electrodes based on single-wall carbon nanotubes (SWCNTs) offer exceptional power and energy performance due to the high surface area, high conductivity, and the ability to functionalize the SWCNTs to optimize capacitor properties. This paper will report on the preparation of electrochemical capacitors incorporating SWCNT electrodes and their performance compared with existing commercial technology. Preliminary results indicate that substantial increases in power and energy density are possible. The effects of nanotube growth and processing methods on electrochemical capacitor performance is also presented. The compatibility of different SWCNTs and electrolytes was studied by varying the type of electrolyte ions that accumulate on the high-surface-area electrodes. For more information, contact W.J. Ready, Georgia Tech Research Institute, 925 Dalney St., Atlanta, GA 30332; (404) 385-4497; fax (404) 894-0580; e-mail jud.ready@gtri.gatech.edu.     

An augmented Lagrangian approach to non-convex SAO using diagonal quadratic approximations

Successful gradient-based sequential approximate optimization (SAO) algorithms in simulation-based optimization typically use convex separable approximations. Convex approximations may however not be very efficient if the true objective function and/or the constraints are concave. Using diagonal quadratic approximations, we show that non-convex approximations may indeed require significantly fewer iterations than their convex counterparts. The nonconvex subproblems are solved using an augmented Lagrangian (AL) strategy, rather than the Falk-dual, which is the norm in SAO based on convex subproblems. The results suggest that transformation of large-scale optimization problems with only a few constraints to a dual form via convexification need sometimes not be required, since this may equally well be done using an AL formulation.     

Approximated approximations for SAO

We propose to replace a number of popular approximations by their diagonal quadratic Taylor series expansions. The resulting separable quadratic approximations are easily convexified, and are well suited for use in dual sequential approximate optimization (SAO) algorithms. Global convergence of the resulting SAO algorithms may be enforced in a natural way using conservatism. The approximated approximation approach is explicitly illustrated for (i) reciprocal and exponential intervening variables, (ii) the intervening variables used in the method of moving asymptotes (MMA), (iii) the intervening variables used in CONLIN, and (iv) the TANA-3 approximations. The use of intermediate responses for use in, for example, truss and frame-like structures, is also discussed. Key advantages of replacing nonlinear approximations by their diagonal quadratic approximations are that these approximated approximations can all be used simultaneously in a single dual statement; the dual does not depend on the form of the original approximations. In addition, in a dual setting, the resulting subproblems yield simple analytical relationships between the primal and dual variables, which is often not the case with the original nonlinear approximations. An important example hereof is the exponential approximation. Although the diagonal quadratic approximations may differ notably from their original counterparts, they typically are quite similar in a sufficiently small search subregion, which relates to the move limits commonly used in SAO anyway.     

Chemical vapor deposition synthesis of self-aligned carbon nanotube arrays

A procedure for producing arrays of self-aligned carbon nanotubes (CNTs) using standard chemical vapor deposition (CVD) is reported. Using UV photolithography, silicon substrates are patterned with a thin layer of thermally evaporated iron as a CNT catalyst. The CVD synthesis was carried out over a small temperature range (700°C–800°C) using acetylene and methane gasses, producing aligned CNT towers. Scanning electron microscopy (SEM) analysis shows a relationship between CNT tower height and synthesis time. Additionally, results show that impurity particles dramatically effect CNT tower growth. These results indicate that aligned CNTs can be produced in a desired pattern with height control.     

Digital lithographic processing for large‐area electronics

Abstract— A non‐contact jet‐printed mask‐patterning process is described. By combining digital imaging with jet printing, digital lithography was used to pattern a‐Si:H‐based electronics on glass and plastic substrates in place of conventional photolithography. This digital lithographic process is capable of layer‐to‐layer registration of ±5 μm using electronic mask files that are directly jet printed onto a surface. Aminimum feature size of 50 μm was used to create 180 × 180 element backplanes having 75‐dpi resolution for display and image‐sensor applications. By using a secondary mask process, the minimum feature size can be reduced down to ～15 μm for fabrication of short‐channel thin‐film transistors. The same process was also used to pattern black‐matrix wells in fabricating color‐filter top plates in LCD panels.     

All‐additive ink‐jet‐printed display backplanes: Materials development and integration

Abstract— Methods used to deposit and integrate solution‐processed materials to fabricate TFT backplanes by ink‐jet printing are discussed. Thematerials studied allow the development of an all‐additive process in which materials are deposited only where their functionality is required. The metal layer and semiconductor are printed, and the solution‐processed dielectric is spin‐coated. Silver nanoparticles are used as gate and datametals, the semiconductor used is a polythiophene derivative (PQT‐12), and the gate dielectric is an epoxy‐based photopolymer. The maximum processing temperature used is 150°C, making the process compatible with flexible substrates. The I_ON/I_OFF ratio was found to be about 10⁵?10⁶, and TFT mobilities of 0.04 cm²/V‐sec were obtained. The influence of surface treatments on the size and shape of printed features is presented. It is shown that coffee‐stain effects can be controlled with ink formulation and that devices show the expected pixel response.     

Liquid chromatographic method for fumonisin B1 in sorghum syrup and corn-based breakfast cereals.

The fungus Fusarium verticillioides has been found on corn and sorghum, so it is possible that one or more of these toxins may be found in corn products such as breakfast cereals and syrup prepared from sorghum. Published methods when applied to syrups spiked with fumonisins gave low recoveries, less than 50%. A method was therefore developed which would be applicable to the syrup and breakfast cereals as well. Test samples were extracted with methanol-0.1 M sodium phosphate buffer (pH3) (1 + 1). The extract was diluted with water and applied to a 1 g C18 column. The column was washed with acetonitrile-water (2 + 8). Fumonisin B1 (FB1) was eluted with acetonitrile-trifluoroacetic acid (1000 + 1). The purified extract was evaporated and the toxin was derivatized with ophthaldialdehyde mercaptoethanol. The reaction mixture was resolved on a C18 liquid chromatographic column using acetonitrile-water-acetic acid (500 + 550 + 10.5) as the mobile phase at 37 degrees C, and FB1 measured with a fluorescence detector (excitation 335 nm, emission 440 nm). Recoveries of FB1 added to samples of sorghum syrup at levels ranging from 0.1 to 1.0 microgram/g were 94-132%. Recoveries of FB1 added to samples of breakfast cereal (corn flakes) at levels ranging from 0.2 to 1.6 micrograms/g were 96-100%. The method was applied to the analysis of 35 samples of sorghum syrup collected from 15 states in the US. One sample was found to contain FB1 at 0.12 microgram/g. A total of 32 samples of breakfast cereals collected by the Food and Drug Administration inspectors from grocery stores around the Kansas City area were analysed; no FB1 was found in the breakfast cereals (< 0.01 microgram/g). Results of this study indicated that FB1 possibly is not a problem in sorghum syrup and corn-based breakfast cereals in the US.     

Amorphous and nanocrystalline silicon growth on carbon nanotube substrates

In this study, smooth and conformal hydrogenated silicon thin films are examined and analyzed on various multi-walled carbon nanotube (MWCNT) substrates. The films are deposited using radio-frequency plasma-enhanced chemical vapor deposition with He dilution and parameters that are heavily in the γ regime. It is proposed that high-energy plasmas with limited penetration depth can induce crystallization to occur on MWCNT substrates of varying active surface areas. The samples presented exhibit properties that are promising for energy applications, including photovoltaics and lithium-ion batteries and have been studied using scanning electron microscopy, Raman spectroscopy, X-ray diffraction, UV-Vis spectrophotometry, four-point probe measurements, and Fourier transform infrared spectroscopy.     

Vertically integrated amorphous silicon color sensor arrays

Large-area color sensor arrays based on vertically integrated thin-film sensors were realized. The complete color information of each color pixel is detected at the same position of the sensor array without using optical filters. Sensor arrays consist of amorphous silicon thin-film color sensors integrated on top of amorphous silicon readout transistors. The spectral sensitivity of the sensors is controlled by the applied bias voltage. The operating principle of the color sensor arrays and the influence of device design on spectral sensitivity are described. Furthermore, the image quality of the sensor arrays is analyzed by measurements of the line spread function and the modulation transfer function.