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Ziane A. Amrani M. Rabehi A. Douara A. Mostefaoui M. Necaibia A. Sahouane N. Dabou R. Bouraiou A. 《Semiconductors》2021,55(1):51-55
Semiconductors - A nitride GaAs Schottky diode have been fabricated by nitridation of GaAs substrates with thickness 0.7 nm of GaN layer. The capacitance–voltage C(V) and... 相似文献
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