基于栅格服务的测试保障智能化研究

从某类装备测试保障能力现状分析入手,论证了测试保障及技术支援保障面向使用模式转型的智能化使用需求,分析了当前测试设备通用化和标准化的快速推进与栅格化、智能化的技术推动基础,然后以标准测试系统为背景介绍了基于栅格的智能化测试保障方案,并深入介绍了云服务测试保障、网络仪器资源虚拟化等栅格应用的关键技术,为形成智能化保障指挥、构建指挥保障一体化提供思路。     

超塑胀形过程中空洞损伤演变的数值模拟

利用刚粘塑性有限元技术采用连续损伤力学导出的空洞损伤演变模型对超塑胀形的空洞损伤演变过程进行了数值模拟。以半球壳和圆筒形零件为例 ,给出了自由胀形和充模胀形件内部空洞体积分布状况 ,指出了空洞损伤对变形的影响 ,并对计算结果进行了分析讨论。计算得出了自由胀形极点处空洞体积分数发展曲线 ,与实验结果十分吻合。计算模型可推广至其他超塑成形问题     

InN薄膜的退火特性

对InN薄膜在氨气氛下的高温退火行为进行了研究.利用XRD,SEM和XPS对样品进行了分析.结果表明,InN薄膜的结晶质量和表面形貌并不随退火温度单调变化.由于高温退火时N原子的挥发,剩下的In原子在样品表面聚集形成In颗粒.当退火温度高于425℃时,In原子的脱吸附作用增加,从而导致样品表面的In颗粒在退火温度高于425℃时逐渐减少.XRD和SEM结果表明In颗粒密度最高的样品具有最差的结晶质量.这种现象可能是由于In颗粒隔离了其下面的InN与退火气氛的接触,同时,金属In和InN结构上的差异也可能在InN中导致了高密度的结构缺陷,从而降低了InN薄膜的结晶质量.     

InxGa1-xN合金薄膜In的表面分凝现象

用MOCVD方法在α-Al2O3(0001)衬底上外延生长了InxGa1-xN合金薄膜.测量结果显示:所制备的InxGa1-xN样品中In的组分随外延生长温度而改变,生长温度由620℃升高到740℃,In的组分由0.72降低到0.27.这是由于衬底温度越高,In进入InxGa1-xN薄膜而成键的效率越低.样品的X射线衍射谱和X射线光电子能谱均显示:在生长温度为620℃和690℃时所生长的InxGa1-xN样品中均存在明显的In的表面分凝现象;而生长温度升至740℃时所得到的InxGa1-xN样品中,In的表面分凝现象得到了有效抑制.保持生长温度不变而将反应气体的Ⅴ/Ⅲ比从14000增加到38000,In的表面分凝现象也明显减弱.由此可以认为,较高的生长温度使得In原子的表面迁移能力增强,In原子从InxGa1-xN表面解吸附的几率增大,而较高的Ⅴ/Ⅲ比则能增加N与In成键几率,从而有利于抑制In的表面分凝.     

Manipulable and Hybridized,Ultralow‐Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods

Manipulating stimulated‐emission light in nanophotonic devices on scales smaller than their emission wavelengths to meet the requirements for optoelectronic integrations is a challenging but important step. Surface plasmon polaritons (SPPs) are one of the most promising candidates for sub‐wavelength optical confinement. In this study, based on the principle of surface plasmon amplification by the stimulated emission of radiation (SPASER), III‐Nitride‐based plasmonic nanolaser with hybrid metal–oxide–semiconductor (MOS) structures is designed. Using geometrically elliptical nanostructures fabricated by nanoimprint lithography, elliptical nanolasers able to demonstrate single‐mode and multimode lasing with an optical pumping power density as low as 0.3 kW cm^?2 at room temperature and a quality Q factor of up to 123 at a wavelength of ≈490 nm are achieved. The ultralow lasing threshold is attributed to the SPP‐coupling‐induced strong electric‐field‐confinement in the elliptical MOS structures. In accordance with the theoretical and experimental results, the size and shape of the nanorod are the keys for manipulating hybridization of the plasmonic and photonic lasing modes in the SPASER. This finding provides innovative insight that will contribute to realizing a new generation of optoelectronic and information devices.     

GaN1-xPx三元合金的红外谱

对GaN1-xPx三元合金进行了红外谱的测试和拟合. 分析结果表明在GaN1-xPx三元合金中存在两个彼此竞争的机制制约着载流子浓度的变化. 一个是来自等电子陷阱的影响，它将减少三元合金中载流子的浓度；另一个来自缺陷的影响，它将增加三元合金中载流子的浓度. 对合金介电函数的倒数的虚部进行了计算，其结果显示，随着合金中P组分比的增加，纵向光学声子-等离激元（LPP）耦合模式向高频方向移动，同时LPP模式线宽逐渐增宽，说明随着合金中P组分比的增加，LPP模式的耦合作用增加，阻尼增强.     

基于内流场的能量回收透平的结构优化

基于叶片式水力机械工作原理,设计出一种卧式双流道混流式水力透平机。为了对其结构进行优化,保证性能,使水能回收效率最大化,基于Navier—Stokes方程和标准的κ-ε双方程紊流模型,采用贴体坐标、非结构化四面体网格和SIMPLEC算法,对无导叶和有导叶的透平机在清水介质下的内部流场进行三维湍流数值模拟计算。研究结果表明：有导叶的水力透平机转轮叶片进口处速度环量、压力分布、叶片上的速度与压力分布以及吸出管内的流动状态都要优于无导叶的水力透平机,从而增加了转轮的能量转换指数。模拟结果为进一步研究能量回收透平机的结构提供了理论依据和实际应用参考。     

Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress

The efficiency droop behavior of GaN-based light emitting diodes (LEDs) is studied when the LEDs are under reverse-current and high-temperature stress tests respectively. It is found that reverse-current stress mainly induces additional non-radiative recombination centers within the active region of InGaN/GaN multiple quantum wells, which degrade the overall efficiency of the GaN LED under test but push the peak-efficiency-current towards higher magnitude. The up-shift of peak-efficiency-current can be explained by a rate-equation model in which the newly-created defects by reverse-current stress enlarge the dominant low-current region of non-radiative recombinations. Comparatively, high-temperature stress mainly increases the series resistance of the LED under test. Although the overall efficiency of the GaN LED also drops, there is no shift of peak-efficiency-current induced by the high-temperature stress.     

GaN1-x Px三元合金的红外谱

对GaN1-xPx三元合金进行了红外谱的测试和拟合.分析结果表明在GaN1-xPx三元合金中存在两个彼此竞争的机制制约着载流子浓度的变化.一个是来自等电子陷阱的影响,它将减少三元合金中载流子的浓度;另一个来自缺陷的影响,它将增加三元合金中载流子的浓度.对合金介电函数的倒数的虚部进行了计算,其结果显示,随着合金中P组分比的增加,纵向光学声子-等离激元(LPP)耦合模式向高频方向移动,同时LPP模式线宽逐渐增宽,说明随着合金中P组分比的增加,LPP模式的耦合作用增加,阻尼增强.