Structures with vertically stacked Ge/Si quantum dots for logical operations

Ge/Si structures with vertically stacked quantum dots are simulated to implement the basic elements of a quantum computer for operation with electron spin states. Elastic-strain fields are simulated using the conjugate gradient method and an atomistic model based on the Keating potential. Calculations are performed in the cluster approximation using clusters containing about three million atoms belonging to 150 coordination spheres. The spatial distributions of the strain energy density and electron potential energy are calculated for different valleys forming the bottom of the silicon conduction band. It is shown that the development of multilayer structures with vertically stacked quantum dots makes it possible to fabricate deep potential wells for electrons with vertical tunnel coupling.     

Formation of germanium nanoislands on pit-patterned silicon substrates by means of the molecular dynamics method

The molecular dynamics method is used to study the formation of Ge nanoislands on pit-patterned Si(100) substrates. For substrates with overlapping pits and pits in the shape of truncated inverted pyramids, the energy surface is calculated. On the basis of its analysis, the mechanism of nuclear surface diffusion on the pit-patterned surface is described. The specific energy of Ge/Si heterostructures with different morphology of nanoislands in pits is calculated. It is shown that the configuration with multiple nanoislands in a pit can be thermodynamically favorable.     

Raman studies of phase and atomic compositions of GeSi nanosystems after pulsed annealing

The phase and elemental compositions of GeSi heterostructures deposited on non-refractory substrates are analyzed by using a non-destructive express technique, i.e., the Raman spectroscopy. It is shown that application of pulsed laser annealing allows one to vary the elemental composition and size of nanocrystals formed from solid alloys of germanium and silicon.     

Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μm and 8- to 12- μm spectral regions with responsivity values up to about 1 mA/W at a bias of −3 V and operates under normal incidence radiation with background limited performance at 100 K. The relative response in the mid- and long-wave atmospheric windows could be controlled through the applied voltage.     

Pulsed-laser modification of germanium nanoclusters in silicon

The effect of pulsed ruby laser radiation on Ge nanoclusters grown on a (100)-oriented Si substrate is studied. The energy density of radiation corresponds to the melting threshold of the Si surface. Changes in the structure of nanoclusters are analyzed by comparing the experimental Raman spectra to those calculated in terms of Born-von Karman and Vol’kenstein models. It is established that the action of one pulse changes the cluster size and partly relieves the compression. Still greater changes take place in a sample subjected to ten pulses. The Ge nanoclusters transform into clusters of Ge_xSi_1?x solid solution, presumably due to the stress-and vacancy-aided diffusion. Laser-induced thermal processes in germanium nanoclusters in silicon are numerically simulated.     

Ge/Si photodiodes with embedded arrays of Ge quantum dots forthe near infrared (1.3–1.5 µm) region

A method has been devised for MBE fabrication of p-i-n photodiodes for the spectral range of 1.3–1.5 µm, based on multilayer Ge/Si heterostructures with Ge quantum dots (QDs) on a Si substrate. The sheet density of QDs is 1.2×10¹² cm^?2, and their lateral size is ～8 nm. The lowest room-temperature dark current reported hitherto for Ge/Si photodetectors is achieved (2×10^?5 A/cm² at 1 V reverse bias). A quantum efficiency of 3% at 1.3 µm wavelength is obtained.     

In situ RHEED control of self-organized Ge quantum dots

In situ registration of high-energy electron diffraction patterns was used for constructing the diagram of structural and morphological states of the Ge film on the Si(100) surface. The following regions identified in the diagram: two-dimensional (2D)-growth, ‘hut’- and ‘dome’-clusters, ‘dome’-clusters with misfit dislocations at the interface. Variations in the lattice constants of the Ge film during the MBE growth on the Si(100) surface were determined. An increase in the lattice constant at the (100) surface was attributed to the elastic deformation at the stage of 2D growth and formation of ‘hut’-clusters and to the plastic relaxation for the ‘dome’-clusters. As a result, epitaxial silicon structures with germanium quantum dots of 15 nm base size at the density of 3×10¹¹ cm⁻² were synthesized. The total electron structure of the hole spectrum of Ge quantum dots in Si was established.     

Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation

Semiconductors - The growth of Ge nanoclusters on a prepatterned Si (100) surface formed by imprint lithography in combination with subsequent irradiation with Ge+ ions is studied. The prepatterned...     

Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

Semiconductors - The luminescence properties of arrays of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups, including those embedded in two-dimensional photonic...     

Molecular ground hole state of vertically coupled GeSi/Si self-assembled quantum dots

We study the ground state of a hole confined in two vertically coupled GeSi/Si quantum dots as a function of the interdot distance and dot composition within the sp(3) tight-binding approach. Both quantum-mechanical tunneling and inhomogeneous strain distribution are included. For pure Ge dots, the strain is found to have two effects on the hole binding energy: (i)?reduction of the binding energy below the value of the single dot with increasing dot separation and (ii)?molecular bond breaking for intermediate interdot distances and posterior bond restoration at larger distance. Both effects are smeared upon Ge-Si intermixing.