Formation of Planar Field-Emission Devices Based on Carbon Nanotubes on Co–Nb–N–(O) Alloy

Semiconductors - Integrated field-emission devices and integrated circuits (ICs) based on them are a promising direction in microelectronics, which is associated with the use of low-voltage and...     

On the detection of U − centers in g-As2Se3 films by thermal cycling measurements of electrical conductivity

Pinning of the Fermi level near the midgap is one of the basic properties of chalcogenide glassy semiconductors. It is assumed in most models that the pinning is due to the presence of charged defects (U ^? centers) that strongly polarize the lattice and have energy levels close to the Fermi level. U ^? centers are detected in this study by the thermal cycling method, which made it possible to markedly extend the time during which the charge released by these centers is recorded. The results of measurements of the electrical conductivity of As₂Se₃ films in successive cycles of sample cooling and heating are presented. This cycling leads to the appearance and evolution of two discrete peaks. A conclusion is made that at least one of these peaks is associated with negatively charged U ^? centers with levels near the Fermi level.     

A model of carbon-nanotube growth-rate limitation on thin-film catalysts

It is experimentally established and theoretically justified that a decreasing growth rate of carbon nanotubes (CNTs) on thin-film catalysts may be caused by the formation of intermetallic compounds that hinder supply of carbon from the bulk. In particular, the growth of CNTs on the Ti–Ni thin-film system is accompanied by the formation of a titanium carbide layer on the surface of a catalyst droplet. The kinetics of CNT growth under these conditions is calculated, and kinetic coefficients determining the growth rate are evaluated.