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排序方式: 共有914条查询结果,搜索用时 15 毫秒
1.
Hiraki M. Uano K. Minami M. Sato K. Matsuzaki N. Watanabe A. Nishida T. Sasaki K. Seki K. 《Solid-State Circuits, IEEE Journal of》1992,27(11):1568-1574
A BiCMOS logic circuit applicable to sub-2-V digital circuits has been developed. A transiently saturated full-swing BiCMOS (TS-FS-BiCMOS) logic circuit operates twice as fast as CMOS at 1.5-V supply. A newly developed transient-saturation technique, with which bipolar transistors saturate only during switching periods, is the key to sub-2-V operation because a high-speed full-swing operation is achieved to remove the voltage loss due to the base-emitter turn-on voltage. Both small load dependence and small fan-in dependence of gate delay time are attained with this technique. A two-input gate fabricated with 0.3-μm BiCMOS technology verifies the performance advantage of TS-FS-BiCMOS over other BiCMOS circuits and CMOS at sub 2-V supply 相似文献
2.
Sh ichi sawa Eiji sawa Yü ji Hirose 《Fullerenes, Nanotubes and Carbon Nanostructures》1995,3(5):565-585
Initial steps of thermal transformation from doubly bonded [2+2] (1) and [4+4] (2) dimers of C60 have been analyzed on the basis of computed structural features and Pople's energy partition scheme. Completely conjugated C120 structures 3 and 4 are found to be considerably stable and proposed to be important intermediates. The linkage patterns in 3 and 4 are also likely to appear in the repeating units of the metastable dimer and polymer phases of A1 crystals. 相似文献
3.
Eiji Takeda 《Microelectronics Reliability》1993,33(11-12)
A universal guideline and state-of-the-art hot-carrier effects in scaled MOSFETs are reviewed and discussed from the viewpoints of 1) DC and AC hot-carrier effects, 2) hot-carrier detrapping phenomena, 3) mechanical stress effects on hot-carrier phenomena, and 4) hot-carrier resistant device structures.In the deep-submicron region, the hot-carrier applicable voltage is less than 3 V, so AC hot-carrier effects from the dynamic operation of actual circuits should be taken into account. Despite much experimentation and analysis, there is still no universally accepted theory that explain the AC degradation mechanism. This is because the noise caused by the wiring inductance in ULSI circuits and in measurement systems screens the intrinsic AC hot-carrier effects.Here, AC hot-carrier degradation enhanced by gate pulse-induced-noise is analyzed experimentally and theoretically. After eliminating the noise problem, it is found that AC hot-carrier degradation in LDD (Lightly doped drain) and GOLD (gate-drain overlapped device) structures can be estimated based on DC degradation in terms of the effective stress time which takes the duty ratio into account. In addition, it is found that the noise is negligible when the wiring inductance is smaller that 80 nH (250 mω), which is important for future circuit design.Furthermore, hot-carrier detrapping effects, especially in p-channel MOS devices, and hot-carrier phenomena under mechanical stress are investigated experimentally to better understand the underlying hot-carrier physics. Finally, future hot-carrier resistant device structures are discussed. 相似文献
4.
Eiji Hoashi Takehiko Yokomine Tomoaki Kunugi 《International Journal of Heat and Mass Transfer》2003,46(21):4083-4095
This paper presents a numerical simulation of wave-type heat transfer phenomena propagating in an aluminum thin foil irradiated by a pulsed laser using the cubic interpolated propagation method coupled with a thermo-convective model. We did not use the two-step model and dual-phase lag model, which are generally known as the non-Fourier heat conduction law, but wave-type heat transfer phenomena could be observed by our method. The main characteristic of the method is to solve the governing equation including the equation of continuity, the equation of motion, the equation of energy and the equation of state. It is found that when the pulse duration is under the order of picosecond, the pure heat conduction is hardly observed and heat transfer toward the inside of materials occurs only by a thermal shock wave. The heat conduction mode after pulse laser irradiation is strongly dependent upon the value of total incident laser energy density Ein and the threshold value for pure heat conduction is 5.0 × 104 J/m2 for an aluminum. 相似文献
5.
Kazuhiko Honda Eiji ૿ sawa Zdenek Slanina Takatoshi Matsumoto 《Fullerenes, Nanotubes and Carbon Nanostructures》1996,4(5):819-834
As a continuation of the studies on thermal transformation of the [2+2] C60 dimer (1), the consequence of the pyracylene-rearrangement-like valence isomerization of the fulvalene partial structure at the bridge of the ring-opened product from 1, namely 2, was searched by dynamic reaction coordinate /AM1 semiempirical MO calculations. It is predicted that the fulvalene bridge of 2 rearranges into naphthalene partial structure by the concerted 'in-plane' mechanism to give a wide-bridged C120 intermediate having twenty five-membered rings and two ten-membered rings (3). The computed energy of activation (145 kcal/mol) is 40 kcal/mol lower than those computed for pyracylene rearrangements. In contrast, the recently reported analogous rearrangement of indigo (13) to dibenzonaphthyridindione (14) is computed to occur by the stepwise 'sp3' mechanism. 相似文献
6.
Manabu Ishitobi Takeshi Myoi Koji Soshin Eiji Hiraki Mutsuo Nakaoka 《Electrical Engineering in Japan》2005,153(3):79-87
This paper presents a single lossless inductive snubber‐assisted ZCS‐PFM series resonant DC‐DC power converter with a high‐frequency high‐voltage transformer link for industrial‐use high‐power magnetron drive. The current flowing through the active power switches rises gradually at a turned‐on transient state with the aid of a single lossless snubber inductor, and ZCS turn‐on commutation based on overlapping current can be achieved via the wide range pulse frequency modulation control scheme. The high‐frequency high‐voltage transformer primary side resonant current always becomes continuous operation mode, by electromagnetic loose coupling design of the high‐frequency high‐voltage transformer and the magnetizing inductance of the high‐frequency high‐voltage transformer. As a result, this high‐voltage power converter circuit for the magnetron can achieve a complete zero current soft switching under the condition of broad width gate voltage signals. Furthermore, this high‐voltage DC‐DC power converter circuit can regulate the output power from zero to full over audible frequency range via the two resonant frequency circuit design. Its operating performances are evaluated and discussed on the basis of the power loss analysis simulation and the experimental results from a practical point of view. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 153(3): 79–87, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20126 相似文献
7.
Amorphous specimens of Fe100–x
B
x
were prepared in the range 10 × 35 at % B by a single-roller method. The crystallization process and the boron concentration dependence of the Curie temperature were examined by differential scanning calorimetry, X-ray diffraction, Mössbauer spectroscopy and magnetic measurements. Two-step crystallization was observed in specimens with× < 17: amorphous amorphous + boron-supersaturated b c c phase (-Fe(B)) t-Fe3B +-Fe. A single-Fe(B) phase was not observed. The transition temperature from t-Fe3B to stable (-Fe + t-Fe2B) sensitively depends on the boron content in the alloys. The crystallization temperature (T
x) of the amorphous alloys was almost unchanged for 17 × 31, but increased remarkably at high boron concentrations of× 33, where the decomposition products consisted of t-Fe2B and o-FeB. The Curie temperature (T
c) of the amorphous phase was as low as 480 K at× = 10, increased with increasing boron content up to 820 K and then decreased in the high boron concentration alloys of× > 28. A single-Fe(B) phase was not detected in the as-quenched specimens of× = 8 and 10. The phase coexisted with the o-Fe3B and amorphous phases. The lattice parameter of the phase was 0.28610 nm which was smaller than that of pure iron by 2/1000, indicating the substitutional occupation of boron atoms in the b c c lattice. 相似文献
8.
9.
In membrane filtration, solution environment factors such as pH and solvent density are important in controlling the filtration
rate and the rejection of the particles and/or the macromolecules. The filtration rate and the rejection in membrane filtration
have been investigated from physicochemical aspects. It was shown that the properties of the filter cake formed on the membrane
surface play a vital role in determining the filtration rate in mem-brane filtration. It was clearly demonstrated that such
filtration behaviors as the filtration rate and the rejection are highly dependent on the electrical nature of the particles
and/or the macromolecules. Furthermore, it was shown that the solvent density ρ has a large effect on the steady filtration
rate in upward ultrafiltration. 相似文献
10.
Hai -Hang Li Masafumi Inoue Hiroyuki Nishimura Junya Mizutani Eiji Tsuzuki 《Journal of chemical ecology》1993,19(8):1775-1787
Phenolic compounds have been identified as the most common allelochemicals produced by higher plants. Inhibitions of cinnamic acid, its related phenolic derivatives, and abscisic acid (ABA) on seedling growth and seed germination of lettuce were studied.trans-Cinnamic acid, ando-,m-, andp-coumaric acids inhibited the growth of etiolated seedlings of lettuce at concentrations higher than 10–4 M and seed germination above 10–3 M. Coumarin inhibited seedling growth and seed germination at 10–5 M or above. Chlorogenic acid inhibited seedling growth above 10–4 M, but did not inhibit seed germination at 10–5–5×10–3 M. Low concentrations (below 10–3 M) of caffeic and ferulic acids promoted the elongation of hypocotyls, but higher concentrations (over 10–3 M) inhibited seedling growth and seed germination. These phenolic compounds and abscisic acid had additive inhibitory effects both on seedling growth and seed germination. The inhibition on lettuce was reversed by caffeic and ferulic acids at concentrations lower than 10–3 M except for the inhibition of germination by coumarin. These results suggest that in naturetrans-cinnamic acid,o-, m-, p-coumaric acids, coumarin, and chlorogenic acid inhibit plant growth regardless of their concentration. However, caffeic and ferulic acids can either promote or inhibit plant growth according to their concentration. 相似文献