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Vasiliev A. G. Vasiliev A. L. Zakharov R. A. Orlikovsky A. A. Horin I. A. Eindou M. 《Russian Microelectronics》2004,33(1):1-6
The surface-diffusion interaction is studied experimentally between cobalt and a heated Ti/Si(100) substrate under reactive magnetron sputtering in an argon–nitrogen atmosphere. A model is proposed that accounts for the nature of silicide formation in the Co/Ti/Si system by volume and surface-diffusion reactions between cobalt and the substrate. It is shown that the diffusion of cobalt into the silicon is impeded by the TiSi
x
layer to a far greater extent than by the Ti layer. 相似文献
2.
A. G. Vasiliev A. L. Vasiliev R. A. Zakharov A. A. Orlikovsky I. A. Horin M. Eindou 《Russian Microelectronics》2004,33(3):147-151
Surface-diffusion reactions are experimentally investigated between a Ti–Co–N or Ti–Co–Si–N alloy and a CoSi
x
/Si(100) structure heated to 650–700°C. 相似文献
3.
A. G. Vasiliev A. L. Vasiliev R. A. Zakharov A. A. Orlikovsky I. A. Horin M. Eindou 《Russian Microelectronics》2003,32(5):275-281
Surface-diffusion reactions between a Ta–Ni–N alloy and a Si(100) substrate are studied experimentally. It is shown that a Ta
x
Si
y
N/NiSi2bilayer can be produced on the substrate by simultaneous electron-beam evaporation of tantalum and nickel in a nitrogen atmosphere, the substrate being heated to about 800°C. The formation of the NiSi2 phase is examined. 相似文献
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