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The surface-diffusion interaction is studied experimentally between cobalt and a heated Ti/Si(100) substrate under reactive magnetron sputtering in an argon–nitrogen atmosphere. A model is proposed that accounts for the nature of silicide formation in the Co/Ti/Si system by volume and surface-diffusion reactions between cobalt and the substrate. It is shown that the diffusion of cobalt into the silicon is impeded by the TiSi x layer to a far greater extent than by the Ti layer.  相似文献   
2.
Surface-diffusion reactions are experimentally investigated between a Ti–Co–N or Ti–Co–Si–N alloy and a CoSi x /Si(100) structure heated to 650–700°C.  相似文献   
3.
Surface-diffusion reactions between a Ta–Ni–N alloy and a Si(100) substrate are studied experimentally. It is shown that a Ta x Si y N/NiSi2bilayer can be produced on the substrate by simultaneous electron-beam evaporation of tantalum and nickel in a nitrogen atmosphere, the substrate being heated to about 800°C. The formation of the NiSi2 phase is examined.  相似文献   
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