Perspectives of chlorine doping of ZnO

Thermodynamic analysis for system ZnO:Cl is performed by means of Kröger method of quasi-chemical reactions. We obtained equilibrium concentrations of defects and free carriers as a function of partial pressure of components in gas phase. When Chlorine total concentration of incorporated Chlorine is 10²⁰ cm^− 3 expected concentration of carriers generated is about 5 10¹⁹ cm^− 3, which is almost three orders of magnitude higher than the one of pure ZnO.     

Fabrication of Bulk Targets of MgB2 with Stoichiometric and Nonstoichiometric Contents

Powder of magnesium diboride was obtained by solid phase reaction of mixture of magnesium （〉 99% pure） and amorphous boron （〉 99% pure） powders at 650-900 ℃ temperatures in inert atmosphere. During synthesis process main attention was paid. to removing oxide layer of surfaces of powder particles by organic solvents in Glovebox, where concentration of oxygen and water steam is less than 5 ppm. Homogenization and activation of powders were conducted in a planetary nano-mill by WC balls in an inert area. Pressing of the obtained powders was conducted in an argon atmosphere. MgB2 nonstoichiometric powders contained excess boron and magnesium, Magnesium hydride was used as source of excess boron, which is fragile compound and easy to grind in nano-mill. It decomposites with metallic magnesium and hydrogen up to 280 ℃ temperature. Commercial magnesium diboride powder （Aldrich, 〉 99%） was used for fabrication of MgB2 bulk targets. Powders systems of MgB2-Mg, MgB2-MgH2, MgB2-B homogenized by nano-mill in Glove box was used for fabrication of composites with nonstoichiometric contents. The targets were cylinders with diameters of 27-52 mm and height of 5-15 mm. Consolidation of pressed powdery composites was conducted in argon atmosphere. Synthesis of MgB2 from mixture of magnesium and amorphous boron powders and simultaneous consolidation were conducted by hot pressing （HP） method. Phase content of the obtained targets were established by XRD method after dry polishing. Superconducting characteristic of the obtained samples were measured by vibrational magnetometer. The superconducting transition with an onset at 39 K was observed in a good agreement with the results of the other groups obtained on samples prepared by conventional techniques. The phase exists near the nominal composition without a significant homogeneity range.     

Effect of substrate on structural and transport properties of sprayed Fe:ZnO polycrystalline thin films

ZnO thin films doped with iron have been grown by spray pyrolysis technique on glass and fused silica substrates in order to study the effect of substrate material on the structural, optical, and electro-magnetotransport properties of grown layers. The polycrystalline Fe:ZnO films have different growth orientation according to the substrate, though both films are highly transparent in the visible region of wavelength. The sample grown on glass substrate has larger magnetoresistance and lower electron mobility than that on fused silica substrate.     

Atmosphere‐Induced Reversible Resistivity Changes in Ca/Y‐Doped Bismuth Iron Garnet Thin Films

Bismuth iron garnet Bi₃Fe₅O₁₂ (BIG) is a multifunctional insulating oxide exhibiting remarkably the largest known Faraday rotation and linear magnetoelectric coupling. Enhancing the electrical conductivity in BIG while preserving its magnetic properties would further widen its range of potential applications in oxitronic devices. Here, a site‐selective codoping strategy in which Ca²⁺ and Y³⁺ substitute for Bi³⁺ is applied. The resulting p‐ and n‐type doped BIG films combine state‐of‐the‐art magneto‐optical properties and semiconducting behaviors above room temperature with rather low resistivity: 40 Ω cm at 450 K is achieved in an n‐type Y‐doped BIG; this is ten orders of magnitude lower than that of Y₃Fe₅O₁₂. High‐resolution electron spectromicroscopy unveils the complete dopant solubility and the charge compensation mechanisms at the local scale in p‐ and n‐type systems. Oxygen vacancies as intrinsic donors play a key role in the conduction mechanisms of these doped BIG films. On the other hand, a self‐compensation of Ca²⁺ with oxygen vacancies tends to limit the conduction in p‐type Ca/Y‐doped BIG. These results highlight the possibility of integrating n‐type and p‐type doped BIG films in spintronic structures as well as their potential use in gas sensing applications.     

Optical properties of manganese doped wide band gap ZnS and ZnO

Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn ions in ZnO lattice. Strong absorption, with onset at about 2.1 eV, is tentatively related to Mn 2+ to 3+ photoionization. Mechanism of emission deactivation in ZnMnO is discussed and is explained by the processes following the assumed Mn 2+ to 3+ recharging.     

Electrical and optical properties of ZnO:Mn thin films grown by MOCVD

Diluted magnetic semiconductor epitaxial thin films of Zn_1 − xMn_xO have been grown on c-sapphire by the MOCVD technique. Variations of a and c lattice parameters follow Vegard's law and attest to the incorporation of substitutional Mn²⁺ ions. Carrier concentration (n-type) and electron mobility were studied versus temperature for different concentrations of manganese. Incorporation of manganese leads to the opening of the band gap, observed as a blue shift in energy regarding pure ZnO.