A Millimeter-Wave (23–32 GHz) Wideband BiCMOS Low-Noise Amplifier

This paper presents a 23–32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 $mu$m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is implemented using 0.18 $mu$m BiCMOS technology and occupies an area of 0.25 mm$^2$ . It achieves a voltage gain of 12 dB, 3-dB bandwidth of 9 GHz, noise figure between 4.5–6.3 dB, linearity higher than ${-}$6.4 dBm with a power consumption of 13 mW from a 1.5 V supply.      

Power-Aware Multiband–Multistandard CMOS Receiver System-Level Budgeting

A systematic system-level design methodology for multiband-multistandard (MB-MS) wideband/reconfigurable CMOS receivers is presented. The methodology determines the specifications (noise figure (NF) and linearity) for each building block to minimize the overall power consumption. System-level simulations show that the gain variation of the LNA for various bands/standards is an important factor in minimizing the power consumption for any MB-MS receiver. Analytical expressions for the optimum gain variation of the LNA, NF, and input-referred third-order intercept point of each building block are presented. The design methodology is applied to a wideband receiver covering Global Systems for Mobile Communications (GSM) 900- and 1900-MHz bands, Global Positioning Systems (GPS), and wideband code-division multiple-access (WCDMA) standards. As an example, the estimated power consumption is reduced by 40% when compared with the approach where the gain of the LNA is constant.