Bias and temperature dependence of homogeneous hot-electroninjection from silicon into silicon dioxide at low voltages

In this paper, new homogeneous hot-electron injection data at 300 K and 77 K is provided covering applied voltages from well below to well above the Si-SiO₂ barrier height, and a wide range of oxide fields. We found that, in contrast to the MOSFET case, homogeneous injection shows two different regimes for accelerating voltages below and above the barrier height. A simple interpretation of the data is proposed, and supported by Monte Carlo (MC) simulations of the injection experiment. Essentially, the two regimes are the signature of a marked transition between an electron population mostly heated by the electric field, and a tail population created by additional but less efficient energy gain mechanisms, leading to a sharp transition in the carrier distribution function. The details of the bias and temperature dependence of injection are then interpreted as the combined effect of tunneling and carrier distribution. Furthermore, possible implications on MOSFET gate currents are briefly discussed     

A rate adaptive bit-loading algorithm for in-building power-line communications based on DMT-modulated systems

This paper deals with a variable rate discrete multitone modulation system for broadband power-line communications, based on the bit-loading algorithm proposed by Leke and Cioffi. In the proposed system a suitable least mean square channel estimator is considered, which is based on the insertion of a training sequence (TS). The proposed approach will be compared with the ideal channel estimates, showing its effectiveness. Moreover, different TS lengths will be compared. The system performance, expressed in terms of bit rate and bit-error rate, is derived by simulation with and without estimation errors. The propagation environment has been assumed as a frequency-selective multipath fading channel with additive colored Gaussian noise, according to the in-building networks model.     

A paradigm for single-case research: The time series study of a long-term psychotherapy for depression.

Articulates a paradigm for single-case research in psychotherapy. A patient diagnosed as having major depressive disorder was seen in an intensive, twice-weekly psychodynamic psychotherapy for 2.5 years. Each session was videotaped, and assessments of patient change were obtained at regular intervals. A time-series analysis was used to model fluctuations in the therapy process to take into account time and the effect of previous events on subsequent changes, thereby preserving the context-determined meaning for therapist and patient actions. A bidirectional analysis of causal effects shows that the influence processes between therapist and patient are mutual and reciprocal and suggests that the effect of the patient on the therapist and on the process has not been made sufficiently explicit in previous models of process and change. The potential of intensive single-case designs for uncovering causal effects in psychotherapy is demonstrated. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Stability analysis of an adaptive packet access scheme for mobile communication systems with high propagation delays

In this paper, we investigate a packet access scheme that is able to support mixed traffics in the presence of high propagation delays. Referring to a Time‐Code Division Multiple Access air interface, we propose a Medium Access Control (MAC) protocol based on a random access scheme. A successful attempt grants the use of a slot‐code resource. This protocol is named Adaptive Time Code‐Packet Reservation Multiple Access (ATC‐PRMA), since the access parameters are changed, depending on the traffic load conditions, so as to fulfil Quality of Service requirements. Numerical examples are carried out for the Low Earth Orbit (LEO)‐Mobile Satellite System (MSS) scenario, but all these considerations could be applied to High‐Altitude Platform Stations (HAPSs) as well. In both cases, high propagation delays prevent an immediate feedback to users. An analytical approach is proposed to study the stability of our MAC scheme. Accordingly, we define a criterion for optimizing system performance. The predicted ATC‐PRMA behaviour is supported by simulation results. Finally, we show the performance improvement of ATC‐PRMA with respect to a MAC protocol not employing adaptive parameters. Copyright © 2003 John Wiley & Sons, Ltd.     

Energy oscillations in electron transport across a triangularbarrier

Carrier transport across the semiconductor space-charge region of a silicon triangular barrier diode was investigated by a Monte Carlo simulation. Oscillations of the electron mean kinetic energy are observed as a function of position along the uphill slope of the barrier under bias. At a given point on the uphill slope, the energy distribution function shows an oscillatory behavior, with a periodicity corresponding to the optical phonon energy. These oscillations are shown to be due to the nonequilibrium dynamics of the electron interaction with optical phonons in the situation when other inelastic electron scattering processes are negligible. The energy oscillations are superimposed on a smooth cooling of the distribution in the transport toward the top of the barrier, as current flows through the system. A comparison with the thermionic theory quantifies the importance of nonequilibrium effects in short-range electronic transport     

Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs

State-of-the-art device simulation is applied to the analysis of possible scaling strategies for the future CMOS technology, adopting the ultrathin silicon body (UTB) double-gate (DG) MOSFET and considering the main figures of merit (FOM) for the high-performance N-MOS transistor. The results of our analysis confirm the potentials of UTB-DG MOSFETs. In particular, the possibility to control the short-channel effects by thinning the silicon layer is fully exploited allowing to adopt almost undoped silicon channel, leading to reduced transversal field. As a consequence, the impact of surface roughness at the Si-oxide interface and the gate tunneling leakage current are substantially reduced compared to the case of highly doped bulk MOSFETs. According to our results, thanks to the suppression of gate leakage current, scaling of the UTB-DG MOSFET down to the 32 nm technology node appears possible adopting -based gate dielectrics. In spite of the improved mobility at given inversion charge density, the simulated on-currents are substantially lower than those required by the 2005 ITRS for the 45 and 32 nm nodes . Nonetheless, thanks to relaxed scaling of the oxide thickness, hence to reduced gate capacitance, the requirements in terms of intrinsic delay and power-delay product can be satisfied. The issue of variability is analyzed by evaluating the dependence of the key FOM on the variation of critical dimensions such as the thickness of the gate oxide and of the silicon layer.     

Analytical prediction of composite beams response in fire situations

In this paper an extension of the method of the Fourier series expansion to the fire analysis of composite beams is presented. In particular the extension concerns the introduction of the temperature dependent interaction of all the components: steel beams, concrete slab and steel connectors. These last are considered of finite stiffness, and a proper account is given to the combined effect of thermal degradation of the properties, and stress amplification caused by the differential thermal expansion across the interface.The proposed method compares very well with some experimental fire tests of simply supported and framed composite beams. Due to its relative simplicity and speed, it can be used for design purposes in evaluating the critical temperature in terms of critical deflection. Finally we recall that the method is capable of dealing with every type of fastening distribution, such as discontinuous or variable length.     

Hybrid photocatalytic membranes embedding decatungstate for heterogeneous photooxygenation

The incorporation of decatungstate in polymeric membranes provides new heterogeneous photocatalysts for the oxidation of organic substrates under oxygen atmosphere at 25 °C. Photocatalytic membranes have been prepared yielding polymeric films with a high thermal, chemical and mechanical stability (PVDF, PDMS, Hyflon). Surface spectroscopy techniques including transmittance and reflectance UV-Vis and FT-IR have been used to assess the photocatalyst integrity within the polymeric support. Catalyst screening has been performed under both homogeneous and heterogeneous photooxygenation conditions. The photocatalyst activity has been evaluated in terms of the substrate conversion, turnover numbers, and recycling experiments. A membrane induced selectivity behavior has been evidenced by comparison with homogeneous oxidations.     

Introductory Paper

In today’s competitive market designing of digital systems (hardware as well as software) faces tremendous challenges. In fact, notwithstanding an ever decreasing project budget, time to market and product lifetime, designers are faced with an ever increasing system complexity and customer expected quality. The above situation calls for better and better formal verification techniques at all steps of the design flow. This special issue is devoted to publishing revised versions of contributions first presented at the 12th Advanced Research Working Conference on Correct Hardware Design and Verification Methods (CHARME) held 21–24 October 2003 in L’Aquila, Italy. Authors of well regarded papers from CHARME’03 were invited to submit to this special issue. All papers included here have been suitably extended and have undergone an independent round of reviewing.