排序方式: 共有10条查询结果,搜索用时 15 毫秒
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Feltin E. Christmann G. Dorsaz J. Castiglia A. Carlin J.-F. Butte R. Grandjean N. Christopoulos S. Baldassarri G. von Hogersthal H. Grundy A.J.D. Lagoudakis P.G. Baumberg J.J. 《Electronics letters》2007,43(17):924-926
Laser action with low threshold average pump power density (~50 W - cm-2 ) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Bragg reflector (DBR) and a top dielectric DBR. The cavity region, formed by n- and p-type GaN layers surrounding only three InGaN/GaN quantum wells, corresponds to a typical active region suitable for an electrically driven VCSEL. In addition to low threshold, a spontaneous emission coupling factor beta ~ 2 x 10-10 is derived for this ready-to-be-processed laser structure. 相似文献
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C. Pietzka A. Denisenko M. Alomari F. Medjdoub J.-F. Carlin E. Feltin N. Grandjean E. Kohn 《Journal of Electronic Materials》2008,37(5):616-623
The effect of anodic oxidation on the electronic characteristics of lattice-matched AlInN/GaN heterostructures was investigated
using field-effect transistor (FET) structures with the gate areas in direct contact with the electrolytes. The gate surface
of the FETs was subjected to anodic oxidation in 0.1 M KOH. The oxidized heterostructures were analyzed by electrochemical
impedance spectroscopy and by modeling the characteristics of the electrolyte-gate FETs and the energy-band diagram of the
heterostructures. This analysis suggested that the anodic treatment induced a bulk oxidation of the AlInN barrier. The Fermi
level at the oxidized AlInN surface was shifted deep into the bandgap. The oxidation led to a reduction of the carrier mobility
and to partial depletion of the channel. 相似文献
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Barrier-Layer Scaling of InAlN/GaN HEMTs 总被引:3,自引:0,他引:3
Medjdoub F. Alomari M. Carlin J.-F. Gonschorek M. Feltin E. Py M.A. Grandjean N. Kohn E. 《Electron Device Letters, IEEE》2008,29(5):422-425
We discuss the characteristics of high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at VG = 2.0 V) decreased with decreasing barrier thickness due to the gate forward drive limitation and residual surface-depletion effect. Full pinchoff and low leakage are observed. Even with 3-nm ultrathin barrier, the heterostructure and contacts are thermally highly stable (up to 1000degC). 相似文献
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Lupu A. Julien F.H. Golka S. Pozzovivo G. Strasser G. Baumann E. Giorgetta F. Hofstetter D. Nicolay S. Mosca M. Feltin E. Carlin J.-F. Grandjean N. 《Photonics Technology Letters, IEEE》2008,20(2):102-104
We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-mum-wide WGs the propagation losses in the 1.5- to 1.58-mum spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process. 相似文献
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Castiglia A. Feltin E. Dorsaz J. Cosendey G. Carlin J.-F. Butte R. Grandjean N. 《Electronics letters》2008,44(8):521-522
A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice- matched to GaN. Lasing action is demonstrated for gain-guided devices at room temperature under pulsed current injection conditions. Direct comparison with structures including only a standard Al0.07Ga0.93N bottom cladding shows an improved optical confinement. This is exemplified by a decreased threshold current density. 相似文献
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Etienne Quesnel Alexandre Lagrange Margaux Vigier Marianne Consonni Myriam Tournaire Valentin Le Marchand Aurlien Suhm Patrick Demars Jean‐Christophe Pillet Badhise Ben Bakir Nicolas Olivier Eric Feltin Jean Michel Lamy Michele D'Amico Edgar Cao Gunther Haas Laurent Charrier Philippe Coni 《Journal of the Society for Information Display》2021,29(1):3-16
This paper focuses on the dimensioning of a very bright full color 10 μm‐pitch light‐emitting device (LED) microdisplay for avionics application. Starting from the specifications of head‐mounted display to be used in an augmented reality optical system, a theoretical approach is proposed that enables predicting the specifications of the main technology building blocks entering into the microdisplay manufacturing process flow. By taking into account various material and technological parameters, kept as realistic as possible, it is possible to assess the feasibility of a very bright LED microdisplay (1 Mcd/m2 full white) and to point out the main limitations. The theoretical specifications are then compared with the technical results obtained so far in the framework of the H2020 Clean Sky “HILICO” project. It shows that 350 000 cd/m2 of white emission may be accessible with the present gallium nitride (GaN)‐micro‐LED technology provided a color conversion solution with stable external quantum efficiency of 30% is available. Beyond such level of luminance, the inherent limitations of driving circuit (4 V, 15 μA per pixel) commands working with materials enabling higher external quantum efficiency (EQE). In particular, 10‐μm‐pitch micro‐LEDs with electroluminescence EQE of 15% and color conversion EQE approaching 60% are needed, opening the way to future challenging material and technology research developments. 相似文献
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