45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 /spl mu/m

Self-pulsation at 45 GHz repetition frequency has been demonstrated in 1.5 /spl mu/m monolithic single-section quantum dot Fabry-Perot semiconductor lasers without saturable absorber. The mode-beating exhibits a narrow linewidth below 100 kHz, demonstrating high phase correlation between these modes. Such modelocked lasers open ways to low timing-jitter components for clock recovery or millimetre-wave generation in wireless transmission applications.     

Baseline Determination in Construction Labor Productivity-Loss Claims

Various ways of quantifying damages have been applied to productivity loss claims in construction. All of the ways attempt to be as objective as possible based on the extent of information available in a particular case. The measured mile, a widely accepted method, is employed when an unimpacted baseline period of production can be identified. Although that approach is considered to be the most objective method available in such cases, the method is limited and does not directly account for variation in individual productivity values about a normal or natural level of productivity. A gap exists between the use of existing methods and the availability of an appropriate methodology that specifically addresses variation in productivity. The key lies in the way baseline productivity is measured, which is inherently statistical, yet no truly statistical methods are used to establish such a baseline. Using the measured mile as a backdrop, this article provides an objective, measurement-based approach that can be used to establish a productivity baseline applied to construction productivity loss claims, based on the application of statistical methods aided by a process control chart. The focus is on providing the basic principles and concepts underlying the approach presented.     

High performance liquid chromatographic separation of stereoisomeric bile acids as their UV-sensitive esters

High performance liquid chromatographic separation of a series of mono-, di- and trihydroxylated 5β-cholanic acids which differ only in position and configuration of hydroxyl groups at positions C-3, C-7 and/or C-12, is reported. The C-24 free acids were derivatized to four different classes of UV-sensitive esters, i.e.,p-bromophenacyl (BP),m-methoxyphenacyl (MP), 4-nitrophthalimidemethyl (NPM) and 9-anthrylmethyl (AM) esters, and chromatographed on two, variants of C₁₈ reversed-phase columns (Nova-Pak C₁₈ and Zorbax ODS) with methanol-water systems as mobile phase. Separation efficiency and elution order of some isomeric pairs were influenced by both the structure of the C-24 ester groups and the nature of the columns used. Excellent chromatographic properties were found for those derivatives, particularly for the NPM esters.     

Object permanence and working memory in cats (Felis catus).

Cats (Felis catus) find an object when it is visibly moved behind a succession of screens. However, when the object is moved behind a container and is invisibly transferred from the container to the back of a screen, cats try to find the object at or near the container rather than at the true hiding place. Four experiments were conducted to study search behavior and working memory in visible and invisible displacement tests of object permanence. Exp 1 compared performance in single and in double visible displacement trials. Exp 2 analyzed search behavior in invisible displacement tests and in analogs using a transparent container. Exps 3 and 4 tested predictions made from Exps 1 and 2 in a new situation of object permanence. Results showed that only the position changes that cats have directly perceived are encoded and activated in working memory because they are unable to represent or infer invisible movements. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Fabrication of Arsenic Sulfide Optical Fiber with Low Hydrogen Impurities

Arsenic sulfide glass optical fibers typically possess extrinsic absorption bands in the infrared wavelength region associated with residual hydrogen and oxygen related impurities, despite using purified precursors. We report a purification process based on the addition of tellurium tetrachloride (TeCl₄) to the glass. During melting, the chlorine from TeCl₄ reacts with the hydrogen impurities to produce volatile products (e.g., HCl) that can be removed by subsequent dynamic distillation. The processing conditions have been modified accordingly to produce optical fibers with significantly reduced loss due to hydrogen sulfide impurity content (1.5 dB/m).     

Arsenic deactivation enhanced diffusion and the reverseshort-channel effect

The effect of enhanced diffusion caused by the electrical deactivation of arsenic on the reverse short-channel effect (RSCE) in NMOS devices is investigated. A simple four-mask process was utilized to fabricate deep sub-micron NMOS devices. Source/drain (S/D) implant and anneal conditions were varied in order to determine their implications on the RSCE. Results indicate that when high concentrations of arsenic deactivate, enhanced diffusion occurs, leading to significantly more RSCE. This implies that the dose of the arsenic implant and the subsequent anneals should be carefully considered in source/drain engineering     

Toward two-dimensional self-organization of nanostructures using wafer bonding and nanopatterned silicon surfaces

The structure of ultrathin silicon layers obtained by molecular hydrophobic bonding is investigated. The twist and tilt angles between the two crystals are accurately controlled. The buried Si|Si interface is observed by transmission electron microscopy and by grazing incidence X-ray techniques. For low twist angle values (/spl psi/<5/spl deg/) plane view observations reveal well-defined dislocation networks. Cross-section observations give evidence that the dislocation networks are localized at the bonding interfacial plane with no threading dislocation. Grazing incidence small angle X-ray scattering measurements confirm the good quality of the bonding interface as well as the quality of the dislocation networks. Grazing incidence X-ray diffraction is also used and shows the long-range order of the periodic strain field in the silicon layer. It shows, especially, the interaction between the dislocations. X-ray reflectivity was employed and estimated that the interfacial thickness (i.e., thickness of the bonding) lower than 1 nm decreases when the twist angle increases. The nanopatterned surface is then investigated by scanning tunneling microscopy and X-ray methods. To validate these substrates for long-range order self-organization, the growth of Si and Ge quantum dots is finally achieved.