A highly integrated wideband millimeter-wave MMIC converter using0.25-μm P-HEMT technology

A highly integrated wideband converter that was designed to upconvert the entire 6- to 18-GHz input RF frequency band to a 22-GHz intermediate frequency using a 28- to 40-GHz local oscillator (LO) is described. The circuit was designed using 0.25-μm pseudomorphic HEMT technology. The converter incorporates a three-stage RF amplifier, a three-stage LO amplifier, and an active balanced mixer, all integrated on a chip 96 mil×96 mil in size. The upconverter monolithic microwave integrated circuit (MMIC) has an average of 10-dB conversion gain across the full 6-18-GHz input band     

A highly integrated multifunction macro synthesizer chip (MMSC) forapplications in 2-18 GHz synthesized sources

A highly integrated monolithic microwave integrated circuit (MMIC) that acts as the core of the RF section of a synthesized source is developed using commercially available 0.2-μm pseudomorphic high electron mobility transistor (PHEMT) technology. Measured performance is shown up to 18 GHz. The same system architecture is able to produce synthesized output through 40 GHz with modifications of some critical building blocks of the chip. The chip performs all the frequency selection and tuning functions. It has more than 30 RF blocks integrated on an area of 4.27×4.68 mml. Some individual blocks operate through 40 GHz