Deletions in one domain of the Friend virus-encoded membrane glycoprotein overcome host range restrictions for erythroleukemia

Although the Friend virus-encoded membrane glycoprotein (gp55) activates erythropoietin receptors (EpoR) to cause erythroblastosis only in certain inbred strains of mice but not in other species, mutant viruses can overcome aspects of mouse resistance. Thus, mice homozygous for the resistance allele of the Fv-2 gene are unaffected by gp55 but are susceptible to mutant glycoproteins that have partial deletions in their ecotropic domains. These and other results have suggested that proteins coded for by polymorphic Fv-2 alleles might directly or indirectly interact with EpoR and that changes in gp55 can overcome this defense. A new viral mutant with an exceptionally large deletion in its ecotropic domain is now also shown to overcome Fv-2rr resistance. In all cases, the glycoproteins that activate EpoR are processed to cell surfaces as disulfide-bonded dimers. To initiate analysis of nonmurine resistances, we expressed human EpoR and mouse EpoR in the interleukin 3-dependent mouse cell line BaF3 and compared the abilities of Friend virus-encoded glycoproteins to convert these cells to growth factor independence. Human EpoR was activated in these cells by erythropoietin but was resistant to gp55. However, human EpoR was efficiently activated in these cells by the same viral mutants that overcome Fv-2rr resistance in mice. By construction and analysis of human-mouse EpoR chimeras, we obtained evidence that the cytosolic domain of human EpoR contributes to its resistance to gp55 and that this resistance is mediated by accessory cellular factors. Aspects of host resistance in both murine and nonmurine species are targeted specifically against the ecotropic domain of gp55.     

A probabilistic plan recognition algorithm based on plan tree grammars

We present the PHATT algorithm for plan recognition. Unlike previous approaches to plan recognition, PHATT is based on a model of plan execution. We show that this clarifies several difficult issues in plan recognition including the execution of multiple interleaved root goals, partially ordered plans, and failing to observe actions. We present the PHATT algorithm's theoretical basis, and an implementation based on tree structures. We also investigate the algorithm's complexity, both analytically and empirically. Finally, we present PHATT's integrated constraint reasoning for parametrized actions and temporal constraints.     

Advances in selective wet oxidation of AlGaAs alloys

We review the chemistry, microstructure, and processing of buried oxides converted from AlGaAs layers using wet oxidation. Hydrogen is shown to have a central role in the oxidation reaction as the oxidizing agent and to reduce the intermediate predict As₂O₃ to As. The stable oxide is amorphous (Al_xGa_1-x) ₂O₃ which has no defects along the oxide/semiconductor interfaces but can exhibit strain at the oxide terminus due to volume shrinkage. The influence of gas flow, gas composition, temperature, Al-content, and layer thickness on the oxidation rate are characterized to establish a reproducible process. Linear oxidation rates with Arrhenius activation energies which strongly depend upon AlAs mole fraction are found. The latter produces strong oxidation selectivity between AlGaAs layers with slightly differing Al-content. Oxidation selectivity to thickness is also shown for layer thickness <60 nm. Differences between the properties of buried oxides converted from AlGaAs and AlAs layers and the impact on selectively oxidized vertical cavity laser lifetime are reported     

Fabrication and performance of selectively oxidized vertical-cavitylasers

We report the high yield fabrication and reproducible performance of selectively oxidized vertical-cavity surface emitting lasers. We show that linear oxidation rates of AlGaAs without an induction period allows reproducible fabrication of buried oxide current apertures within monolithic distributed Bragg reflectors. The oxide layers do not induce obvious crystalline defects, and continuous wave operation in excess of 650 h has been obtained. The high yield fabrication enables relatively high laser performance over a wide wavelength span. We observe submilliamp threshold currents over a wavelength range of up to 75 nm, and power conversion efficiencies at 1 mW output power of greater than 20% over a 50-nm wavelength range     

Direct Modulation Characteristics of Composite Resonator Vertical-Cavity Lasers

We report the small-signal modulation characteristics of a monolithic dual resonator vertical cavity surface emitting laser. The modulation response is described by a system of rate equations with two independent carrier populations and a single longitudinal optical mode. The independent optical overlaps and differential gains of the two active regions can each be adjusted to maximize the output response. We show that under certain conditions, the composite resonator may achieve a higher bandwidth than a single cavity laser with the same photon density. We find the relaxation oscillation frequency to depend mainly on the total photon density and not the individual currents in the two cavities. With appropriate current injection, the composite resonator laser achieves a maximum -3-dB bandwidth of 12.5 GHz and a maximum modulation current efficiency factor of approximately 5GHz/ma^1/2      

A 10-GB/s SONET-compliant CMOS transceiver with low crosstalk and intrinsic jitter

A 4:1 SERDES IC suitable for SONET OC-192 and 10-Gb/s Ethernet is presented. The receiver, which consists of a limiting amplifier, a clock and data recovery unit, and a demultiplexer, locks automatically to all data rates in the range 9.95-10.7 Gb/s. At a bit error rate of less than 10/sup -12/, it has a sensitivity of 20 mV. The transmitter comprises a clock multiplying unit and a multiplexer. The jitter of the transmitted data signal is 0.2 ps RMS. This is facilitated by a novel notched inductor layout and a special power supply concept, which reduces cross-coupling between the transmitter and receiver. Integrated in a 0.13-/spl mu/m CMOS technology, the total power consumption from both 1.2- and 2.5-V supplies is less than 1 W.     

Core‐Brominated Tetraazaperopyrenes as n‐Channel Semiconductors for Organic Complementary Circuits on Flexible Substrates

Organic thin‐film transistors (TFTs) are prepared by vacuum deposition and solution shearing of 2,9‐bis(perfluoroalkyl)‐substituted tetraazaperopyrenes (TAPPs) with bromine substituents at the aromatic core. The TAPP derivatives are synthesized by reacting known unsubstituted TAPPs with bromine in fuming sulphuric acid, and their electrochemical properties are studied in detail by cyclic voltammetry and modelled with density functional theory (DFT) methods. Lowest unoccupied molecular orbital (LUMO) energies and electron affinities indicate that the core‐brominated TAPPs should exhibit n‐channel semiconducting properties. Current‐voltage characteristics of the TFTs established electron mobilities of up to μ_n = 0.032 cm² V^?1 s^?1 for a derivative which was subsequently processed in the fabrication of a complementary ring oscillator on a flexible plastic substrate (PEN).     

OC-48 capable InGaAsN vertical cavity lasers

A selectively oxidised InGaAsN/GaAs three quantum well vertical cavity laser (VCSEL) demonstrated continuous wave (CW) lasing with a single-mode output power of 0.749 mW at 1266 nm. This is the first reported InGaAsN VCSEL capable of meeting the power and wavelength requirements for both OC-48 SR and OC-48 IR-1 compliant links. The VCSEL uses two low absorption n-type GaAs/AlGaAs distributed Brag reflectors and a tunnel junction to achieve current injection into the active region. A multimode version of the VCSEL had a output power of 1.43 mW at 1.26 μm. CW lasing continued up to temperatures as high as 107°C. The VCSEL material was grown by solid source molecular beam epitaxy with an RF nitrogen plasma source     

Scalable Functionalization of Optical Fibers Using Atomically Thin Semiconductors

Atomically thin transition metal dichalcogenides are highly promising for integrated optoelectronic and photonic systems due to their exciton-driven linear and nonlinear interactions with light. Integrating them into optical fibers yields novel opportunities in optical communication, remote sensing, and all-fiber optoelectronics. However, the scalable and reproducible deposition of high-quality monolayers on optical fibers is a challenge. Here, the chemical vapor deposition of monolayer MoS₂ and WS₂ crystals on the core of microstructured exposed-core optical fibers and their interaction with the fibers’ guided modes are reported. Two distinct application possibilities of 2D-functionalized waveguides to exemplify their potential are demonstrated. First, the excitonic 2D material photoluminescence is simultaneously excited and collected with the fiber modes, opening a novel route to remote sensing. Then it is shown that third-harmonic generation is modified by the highly localized nonlinear polarization of the monolayers, yielding a new avenue to tailor nonlinear optical processes in fibers. It is anticipated that the results may lead to significant advances in optical-fiber-based technologies.