A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications

Recent progress in silicon carbide (SiC) material has made it feasible to build power devices of reasonable current density. This paper presents results including a comparison with state-of-the-art silicon diodes. Switching losses for two silicon diodes (a fast diode, 600 V, 50 A, 60 ns Trr), an ultrafast silicon diode (600 V, 50 A, 23 ns Trr), and a 4H-SiC diode (600 V, 50 A) are compared. The effect of diode reverse recovery on the turn-on losses of a fast insulated gate bipolar transistor (IGBT) are studied both at room temperature and at 150 /spl deg/C. At room temperature, SiC diodes allow a reduction of IGBT turn-on losses by 25% compared to ultrafast silicon diodes and by 70% compared to fast silicon diodes. At 150 /spl deg/C junction temperature, SiC diodes allow turn-on loss reductions of 35% and 85% compared to ultrafast and fast silicon diodes, respectively. The silicon and SiC diodes are used in a boost converter with the IGBT to assess the overall effect of SiC diodes on the converter characteristics. Efficiency measurements at light load (100 W) and full load (500 W) are reported. Although SiC diodes exhibit very low switching losses, their high conduction losses due to the high forward drop dominate the overall losses, hence reducing the overall efficiency. Since this is an ongoing development, it is expected that future prototypes will have improved forward characteristics.     

Characteristics of planar n-p junction diodes made bydouble-implantations into 4H-SiC

Double implantation technology consisting of deep-range acceptor followed by shallow-range donor implantation was used to fabricate planar n⁺-p junction diodes in 4H-SiC. Either Al or B was used as the acceptor species and N as the donor species with all implants performed at 700°C and annealed at 1650°C with an AlN encapsulant. The diodes were characterized for their current-voltage (I-V) and capacitance-voltage (C-V) behavior over the temperature range 25°C-400°C, and reverse recovery transient behavior over the temperature range 25°C-200°C. At room temperature, the B-implanted diodes exhibited a reverse leakage current of 5×10^-8 A/cm² at a reverse bias of -20 V and a carrier lifetime of 7.4 ns     

Characterization of phosphorus implantation in 4H-SiC

We report the characterization of phosphorus implantation in 4H-SiC. The implanted layers are characterized by analytical techniques (secondary ion mass spectrometry, transmission electron microscopy) as well as electrical and a sheet resistance value as low as 160 Ω/□ has been measured. We have also studied the effect of annealing time and temperature on activation of phosphorus implants. It has been shown to possible to obtain low sheet resistance (∼260 Ω/□) by annealing at a temperature as low as 1200°C. High-dose (∼ 4 × 10¹⁵ cm⁻²) implants are found to have a higher sheet resistance than that on lower dose implants which is attributed to the near-surface depletion of the dopant during high temperature anneal. Different implantation dosages were utilized for the experiments and subsequently junction rectifiers were fabricated. Forward characteristics of these diodes are observed to obey a generalized Sah-Noyce-Shockly multiple level recombination model with four shallow levels and one deep level.     

Analytical solutions for high-dose shallow arsenic profiles in silicon

Formulas for surface concentration, junction depth and impurity profile are given for high-dose shallow arsenic diffusions in silicon. These formulas are derived from the analytical solution of the diffusion equation with concentration-dependent diffusivity at constant dose. It was found that the Chebyshev polynomials provide a close approximation of the exact formulas. But although the functional dependence is the same, the coefficients are slightly different. The theoretical profile equation was verified with the SIMS analysis of annealed arsenic implants, which were done at 80 keV with 5 and 8e15 ions/cm².     

Epidemiology of accidental home fires in Montreal2

Accidental home fires usually start in areas of the dwelling where people spend most of their time. The most frequent causes of fires are related to the activities of the residents, smoking being the most common. Persons who have home fires are, on average, younger than their controls, have more children, smoke in bed more and stay at home less often during the day. Typically, they live in apartment buildings where there has already been a fire, have less space available, but enjoy more fire protection than the controls. Home fires have characteristic seasonal, weekly and hourly distributions, as well as preponderance for older areas of the city. They are usually discovered by residents, smoke leading to detection in most cases, and most often occupants use their own telephones to alert firemen. This happens “immediately” after the discovery and the firemen are at the scene within 10 minutes in 90% of all instances. Extent of damage seems to be dependant on the time that elapses between the onset and the discovery of fires. No single variable can explain the occurences of accidental home fires. Yet, there appears to exist a person-building susceptible profile in which personal characteristics take precedence. Smoke detectors should become mandatory. Anti-smoking efforts should be enhanced. More care is needed when designing electrical power supplies in dwellings.     

Exercise limitation in obstructive lung disease

OBJECTIVE: To study the relationship of resting pulmonary function to maximal exercise power output (Wmax) in obstructive lung disease (OLD). SETTING: University Hospital Pulmonary Function Laboratory. SUBJECTS: Twenty-five patients with OLD (6 with asthma and 19 with COPD). METHODS: Measurement of pulmonary lung function, resting arterial blood gases, and maximal symptom-limited exercise on a cycle ergometer. RESULTS AND CONCLUSIONS: In OLD, the only significant contributor to Wmax was the inspiratory capacity (r2 = 0.66; p < 0.001).     

Silicon carbide UV photodiodes

SiC photodiodes were fabricated using 6 H single-crystal wafers. These devices have excellent UV responsivity characteristics and very low dark current even at elevated temperatures. The reproducibility is excellent and the characteristics agree with theoretical calculations for different device designs. The advantages of these diodes are that they will operate at high temperatures and are responsive between 200 and 400 nm and not responsive to longer wavelengths because of the wide 3-eV bandgap. The responsivity at 270 nm is between 70% and 85%. Dark-current levels have been measured as a function of temperature that are orders of magnitude below those previously reported. Thus, these diodes can be expected to have excellent performance characteristics for detection of low light level UV even at elevated temperatures     

SiC MOS interface characteristics

It is well known that SiC can be thermally oxidized to form SiO ₂ layers. And Si MOSFET IC's using thermally grown SiO₂ gate dielectrics are the predominant IC technology in the world today. However the SiC/SiO₂ interface has not been well characterized as was the case for Si MOS in the early 1960's. This paper presents data which for the first time characterizes the SiC/SiO₂ interface and explains one of the previously unexplained abnormalities observed in the characteristics of SiC MOSFET's     

Influence of inhaled steroids on recovery from occupational asthma after cessation of exposure: an 18-month double-blind crossover study

Occupational asthma (OA) is a useful model for the study of asthma in humans. The possibility that inhaled corticosteroids, in addition to withdrawal from the workplace, could improve clinical and functional recovery from OA can be hypothesized. We assessed clinical, functional, and behavioral characteristics of 32 subjects (22 male, 10 female), in all but one of whom OA was confirmed by specific inhalation challenges induced by either high- (n=13) or low-molecular-weight (n=19) agents within 3 mo after cessation of exposure. In this randomized, crossover, double-blind study, subjects (paired for baseline PC20 and duration of symptoms after exposure) received either placebo or 1,000 micrograms of inhaled beclomethasone daily for 1 yr, followed by the alternate medication for 6 mo. Various clinical, functional, and behavioral parameters were examined at each 3-mo visit. Significant improvement in clinical (nocturnal symptoms, cough), functional (morning and evening peak expiratory flow rates), and behavioral (quality of life) parameters were detected in the active-treatment period, although the magnitude of the improvement was relatively small. Side effects (oropharyngeal, reduced cortisol) were similar in the placebo and treatment groups. Distinguishing subjects who started with the active preparation from those who were given placebo first showed that most clinical and behavioral parameters improved in the former instance, whereas there was no significant difference in the latter. We conclude that inhaled corticosteroids induce a small but significant overall improvement of the asthmatic condition in subjects with occupational asthma caused by high- and low-molecular-weight agents after withdrawal from exposure. The beneficial effect is, however, more pronounced if inhaled steroids are given early after diagnosis.