Changes in pain perception and pain-related somatosensory evoked potentials in humans produced by exposure to oscillating magnetic fields

cDNA selection was used to isolate coding sequences from cosmids mapping to the gene-rich telomeric region of human chromosome 21q. A novel cDNA, termed SMT3A, was isolated and mapped between the loci PFKL and D21S171, about 2.2 Mb proximal to the telomere. The predicted protein of 103 amino acids appears to be a homologue of the Saccharomyces cerevisiae SMT3 protein, whose gene was previously isolated as a suppressor of mutations in the MIF2 gene. The yeast MIF2 gene encodes an essential centromeric protein and shows homology to mammalian CENP-C, an integral component of active kinetochores. SMT3A was found to be highly homologous to two other recently isolated human genes, suggesting the presence of a new gene family. Homologous sequences were also found in protozoa, metazoa, and plants. Moreover, all predicted proteins show significant homology to ubiquitin. The proposed role of yeast SMT3 as centromeric protein and the strong evolutionary conservation of the SMT3A gene suggest an involvement of the encoded protein in the function and/or structure of the eukaryotic kinetochore.     

Physics-based electron device modelling and computer-aided MMICdesign

On overview on the state of the art and future trends in physics-based electron device modelling for the computer-aided design of monolithic microwave ICs is provided. After a review of the main physics-based approaches to microwave modeling, special emphasis is placed on innovative developments relevant to circuit-oriented device performance assessment, such as efficient physics-based noise and parametric sensitivity analysis. The use of state-of-the-art physics-based analytical or numerical models for circuit analysis is discussed, with particular attention to the role of intermediate behavioral models in linking multidimensional device simulators with circuit analysis tools. Finally, the model requirements for yield-driven MMIC design are discussed, with the aim of pointing out the advantages of physics-based statistical device modeling; the possible use of computationally efficient approaches based on device sensitivity analysis for yield optimization is also considered     

Discretization schemes for high-frequency semiconductor devicemodels

This paper provides an overview on the numerical issues involved in the spatial and time-domain discretization of the coupled transport-electromagnetic models used in the simulation of high-frequency semiconductor devices. The physical transport models derived from the Boltzmann transport equation (BTE) are reviewed in order of decreasing complexity, from the full hydrodynamic model to the drift-diffusion approach. Spatial discretization is introduced starting from ad hoc approaches developed in the field of semiconductor modeling, like the Scharfetter-Gummel (1969) scheme; a critical comparison is then provided with the upwind finite-element schemes. Finally, time-domain discretization issues are reviewed, with particular stress on innovative developments in the area of hydrodynamic and of coupled transport-full-wave EM models     

The influence of ground-plane width on the ohmic losses of coplanarwaveguides with finite lateral ground planes

In this paper, analytical computer-aided design (CAD)-oriented conformal-mapping approximations are presented for the high-frequency attenuation of symmetric and asymmetric coplanar waveguides (ACPWs) with finite-extent lateral ground planes. A discussion is presented on the effect of ground-plane width on the losses, and design criteria are derived     

Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation

Analytic-band Monte Carlo simulation of electron transport in bulk wurtzite ZnO, validated against the results of a full-band code and available experimental data, is used to determine the main parameters required by drift-diffusion and hydrodynamic models. Steady-state drift velocity, carrier temperature, energy and momentum relaxation time, noise diffusivity, and electron thermal conductivity are calculated, and their dependence on temperature and electric field or average electron energy is approximated by means of a complete set of fitting models suitable for inclusion in commercial device simulation tools.     

Accurate large-signal GaAs MESFET and HEMT modeling for power MMIC amplifier design

This article describes, from an industrial user's point of view, how large-signal GaAs MESFET and HEMT modeling can be done accurately and efficiently for power MMIC amplifier design. The method is based on commercially available CAD tools enhanced by in-house software (e.g., small-signal parameter extraction, generation of load-pull contours). The Materka model is shown to predict accurately the large-signal characteristics of GaAs MESFETs, but not of pseudomorphic HEMTs. For these devices, a modified Angelov model is found to be adequate. A method for determining the numerous large-signal model parameters is presented. Model verification is achieved by comparing simulated and on-wafer measured data like static I(V)-characteristics, multiple bias S-parameters, gain compression characteristics, and load-pull contours. Results of device scaling and calculations of optimum load impedances are discussed. The close fit to the measured data proves that an excellent basis for large-signal power MMIC design has been established.     

Detection of digitalis compounds using a surface plasmon resonance-based biosensor

A prospective national investigation comprising 633 extremely low birthweight (ELBW) infants born alive in the 2-y period 1990-1992 with a birthweight of < or = 1000 g and gestational age of > or = 23 completed weeks was conducted regarding neurosensory outcome and growth. Three-hundred and sixty-two (98%) surviving ELBW infants were assessed at a median age of 36 months, using a specially designed protocol. At follow-up, mean height, weight and head circumference in both boys and girls were significantly lower than the reference values. The incidence of cerebral palsy was 7% among all children and 14%, 10% and 3% in children born at 23-24, 25-26 and > or = 27 gestational weeks, respectively. At least one obvious handicap was present in 14%, 9% and 3% of these three groups of children, respectively. After adjustment for gestational age, a significantly increased risk of handicap was found in children with intraventricular haemorrhage grade > or = 3 and/or periventricular leucomalacia and in children with retinopathy of prematurity stage > or = 3. The results show that more than 90% of ELBW children born at > or = 25 completed gestational weeks were without neurosensory handicap at 36 months of corrected age. In infants born at 23-24 weeks of gestation, both survival and long-term outcome were less favourable.     

Inhibition of rat Na+/K+-ATPase isoforms by endogenous digitalis extracts from neonatal human plasma

An unique endogenous digitalis-like factor (EDLF) has been previously purified from human newborn cord plasma and its differential effects tested on the three well defined functional isoforms (alpha1, alpha2 and alpha3) of the alpha subunits of Na+/K+-ATPase in rat. EDLF specifically inhibits the enzymatic activity. It differs from ouabain by three criteria: a preincubation with the membranes is required for full activity, no effect on the rat cerebral alpha3 isoform and a steep dose-response curve with the same apparent potency for rat alpha2 and alpha1 isoforms of high (10(-7) M) and low affinity (3 x 10(-5) M) for ouabain. These results indicate that the Na+/K+-ATPase inhibitor involved in the regulation of sodium and body fluid volume and present in neonate and adult human plasmas is distinct from ouabain.     

13-bit GaAs serial-to-parallel converter with compact layout for core-chip applications

Design and characterization of a 13 bit serial-to-parallel converter in GaAs technology for smart antennas are presented. The circuit has been realized with NOR-based super-buffered enhancement/depletion logic, and optimized for a compact layout. The serial-to-parallel converter operates properly well above the 20 kHz design clock frequency.