Effect of illumination on the rate of relaxation of light-induced metastable states in <Emphasis Type="Italic">a</Emphasis>-Si:H(B)

Time dependences of the rates of relaxation of light-induced metastable states of electrically active impurity atoms in boron-doped a-Si:H films have been studied in the dark and under illumination. It has been established that under illumination the rate of relaxation of light-induced metastable states of boron atoms grows in the initial stage when the rate of light-induced relaxation of these states exceeds that of their light-induced generation.     

Photoinduced annealing of metastable defects in boron-doped a-Si:H films

Semiconductors - The effect of illumination on the isothermal relaxation of slow photoinduced metastable defects (metastable electrically active impurity atoms) in boron-doped a-Si:H films has been...