排序方式: 共有14条查询结果,搜索用时 218 毫秒
1.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
2.
Archer J.W. Lai R. Grundbacher R. Barsky M. Tsai R. Reid P. 《Microwave and Wireless Components Letters, IEEE》2001,11(1):4-6
This paper describes a high-performance indium phosphide (InP) monolithic microwave integrated circuit (MMIC) amplifier, which has been developed for application in radioastronomy and imaging-array receivers. Implemented using coplanar waveguide, the six-stage amplifier exhibits 15 db gain, 10 dB input and output return loss, and low noise figure over the 180-205 GHz frequency range. Only one design pass was needed to obtain excellent agreement between the predicted and measured characteristics of the circuit, a unique achievement in this frequency band. The circuit is also the first 180-205 GHz amplifier designed for and successfully fabricated using TRW's standard 0.1-μm InP HEMT process 相似文献
3.
Y.C Chou D Leung I Smorchkova M Wojtowicz R Grundbacher L Callejo Q Kan R Lai P.H Liu D Eng A Oki 《Microelectronics Reliability》2004,44(7):1033-1038
Elevated temperature lifetesting was performed on 0.25 μm AlGaN/GaN HEMTs grown by MOCVD on 2-in. SiC substrates. A temperature step stress (starting at Ta of 150 °C with a step of 15 °C; ending at Ta of 240 °C; 48 h for each temperature cycle) was employed for the quick reliability evaluation of AlGaN/GaN HEMTs. It was found that the degradation of AlGaN/GaN HEMTs was initiated at ambient temperature of 195 °C. The degradation characteristics consist of a decrease of drain current and transconductance, and an increase of channel-on-resistance. However, there is no noticeable degradation of the gate diode (ideality factor, barrier height, and reverse gate leakage current). The FIB/STEM technique was used to examine the degraded devices. There is no detectable ohmic metal or gate metal interdiffusion into the epitaxial materials. Accordingly, the degradation mechanism of AlGaN/GaN HEMTs under elevated temperature lifetesting differs from that observed in GaAs and/or InP HEMTs. The reliability performance was also compared between two vendors of AlGaN/GaN epilayers. The results indicate that the reliability performance of AlGaN/GaN HEMTs could strongly depend on the material quality of AlGaN/GaN epitaxial layers on SiC substrates. 相似文献
4.
Grundbacher R. Lai R. Nishimoto M. Chin T.P. Chen Y.C. Barsky M. Block T. Streit D. 《Electron Device Letters, IEEE》1999,20(10):517-519
We report state-of-the-art V-band power performance of 0.15-μm gate length InGaAs/InAlAs/InP HEMT's which have 15 μm×23 μm dry-etched through-substrate source vias (substrate thickness 50 μm). The 500-μm wide InP HEMT's were measured in fixture at 60 GHz and demonstrated an output power of 190 mW with 40% power-added efficiency (PAE) and 6.8 dB power gain at an input power of 16 dBm. These results represent the best combination of power and PAE reported to date at this frequency for any solid state device. The results are achieved through optimization of the InP-based heterostructure which incorporates a graded pseudomorphic InGaAs channel and a graded pseudomorphic InAlAs Schottky barrier layer, and the use of 15 μm×23 μm dry-etched through-substrate source vias 相似文献
5.
Wadefalk N. Mellberg A. Angelov I. Barsky M.E. Bui S. Choumas E. Grundbacher R.W. Kollberg E.L. Lai R. Rorsman N. Starski P. Stenarson J. Streit D.C. Zirath H. 《Microwave Theory and Techniques》2003,51(6):1705-1711
This paper describes cryogenic broad-band amplifiers with very low power consumption and very low noise for the 4-8-GHz frequency range. At room temperature, the two-stage InP-based amplifier has a gain of 27 dB and a noise temperature of 31 K with a power consumption of 14.4 mW per stage, including bias circuitry. When cooled to 15 K, an input noise temperature of 1.4 K is obtained at 5.7 mW per stage. At 0.51 mW per stage, the input noise increases to 2.4 K. The noise measurements have been repeated at different laboratories using different methods and are found consistent. 相似文献
6.
Chou Y.C. Grundbacher R. Leung D. Lai R. Liu P.H. Kan Q. Biedenbender M. Wojtowicz M. Eng D. Oki A. 《Electron Device Letters, IEEE》2004,25(2):64-66
The Ti metal interdiffusion of Ti/Pt/Au gate metal stacks in 0.15-/spl mu/m GaAs PHEMTs subjected to high-temperature accelerated lifetest has been physically identified using scanning transmission electron microscopy. Further energy dispersive analysis with X-ray (EDX) analysis confirms the Ti diffusion into the AlGaAs Schottky barrier layer and the decrease of Schottky barrier height suggests the Ti-AlGaAs intermetallic formation, which is consistent with previous Rutherford backscattering spectroscopy/X-ray photoelectron spectroscopy studies. The Ti metal interdiffusion reduces the separation of the gate metal and InGaAs channel, thus leading to a slight Gm increase, positive shift in pinchoff voltage, and S21 increase during the preliminary portion of the lifetest. Accordingly, the Ti interdiffusion effect implies that the lifetime of GaAs PHEMTs subjected to high-temperature accelerated lifetest could be dependent upon the initial thickness of the Schottky layer underneath the gate metal. 相似文献
7.
Chou Y.C. Lai R. Li G.P. Jun Hua Nam P. Grundbacher R. Kim H.K. Ra Y. Biedenbender M. Ahlers E. Barsky M. Oki A. Streit D. 《Electron Device Letters, IEEE》2003,24(1):7-9
A novel low-temperature nitride passivation technique using high-density inductively coupled plasma chemical vapor deposition (HD-ICP-CVD) with SiH/sub 4//N/sub 2/ chemistries to passivate 0.15 /spl mu/m pseudomorphic GaAs HEMTs has been developed for the first time. HD-ICP-CVD nitrides have higher density and lower hydrogen concentration than those of nitrides deposited by plasma-enhanced CVD (PECVD). Furthermore, HD-ICP-CVD passivated devices exhibit better performance in reverse breakdown voltage, transconductance, and cut-off frequency than those of PECVD passivated devices. The results achieved here warrant the applications of HD-ICP-CVD for next-generation nitride passivation in compound semiconductor technologies. 相似文献
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9.
Dawson D. Samoska L. Fung A.K. Lee K. Lai R. Grundbacher R. Po-Hsin Liu Raja R. 《Microwave and Wireless Components Letters, IEEE》2005,15(12):874-876
We present results on an InP monolithic millimeter-wave integrated circuit (MMIC) amplifier having 10-dB gain at 235GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07-/spl mu/m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for S-parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230GHz. 相似文献
10.
In this paper, we present an optimized four-layer resist (PMMA and its copolymers) process for the fabrication of T-shaped gates used in compound semiconductor field effect transistors (FETs). The process is capable of producing a profile which acts as both the etch mask for the wide, asymmetric recess trench as well as the liftoff mask for a T-shaped gate metal. The resist profile is achieved in a single step using electron beam lithography, eliminating the need for two separate lithography steps and the crucial alignment between them. Gate lengths of 100 nm are achieved using this process. Recess widths on the drain side of the gate range from 50 to 300 nm, and recess widths on the source side of the gate are 50 nm. 相似文献