Performance Evaluation of Packet Mobile Communications through Level Crossing Analysis

In this paper the performance of a packet mobile radio network is studied inthe presence of shadow fading outage intervals.Under quite general assumptions for the medium access protocol,the probability mass function of the sequence of packets that may be lostdue to an outage interval is derived. It is seen that long sequences of lostpackets are likely to occur for typical values of the mobile speed andshadowing correlation parameters.For delay constrained sources, e.g., voice, the analysis is mainly focused atderiving the probability function of the sequence of dropped packetsand the probability of dropping. For data sources, the delay statistic isalso derived. In the latter case, the effect of finite buffer length isaddressed. Simulation is used to verify the accuracy of approximations introduced in the analysis.     

Modelling velocity saturation and kink effects in p-channel polysilicon thin-film transistors

Experimental measurements and full-2D numerical simulations show that velocity saturation effects in polysilicon thin-film transistor (TFTs) cannot be neglected in order to obtain a precise modelling of output characteristics. Since full-2D numerical simulations are time consuming and unpractical for circuit simulations, we have developed a new quasi-2D model, that takes into account both velocity saturation effects and the presence of a longitudinal electric field in the Poisson's equation, and includes the effect of parasitic bipolar transistor (PBT) action to reproduce kink effect. The agreement of the quasi-2D model with experimental data from p-channel polysilicon TFTs is very satisfactory even for short channel device, and the presence of a velocity-saturated region with a nearly constant free carrier concentration is reproduced without introducing further assumptions.     

Hot carrier-induced degradation of gate overlapped lightly dopeddrain (GOLDD) polysilicon TFTs

Hot-carrier injection is known to produce interface states and oxide trapped charge, which, depending upon their spatial distribution, can strongly influence the local electric fields as well as the current flow. In this work, we analyze the hot carrier-induced degradation of gate overlapped lightly doped drain (GOLDD) polysilicon thin film transistors (TFTs) and a new model, which correlates the interface state generation with the hot carrier injection current, is proposed. The defect generation rate has been assumed to depend upon the product of hot electron and hole currents J_eh, and the resulting interface state distribution has been evaluated self-consistently with the current density and carrier concentration distributions. By successive iterations, a complete spatial and time evolution of the interface state distribution has been determined, and the electrical characteristics, calculated with these interface state distributions are in good agreement with the experimental data     

Pollution imagery by optical interferometry: application to SO(2) gas

The interferometric correlation method can provide a simple and inexpensive solution for pollution imagery, especially in the case of a spatially localized gaseous cloud. We describe herein a general method for designing an interferometric correlator for the analysis of any pollutant gas that has regularly distributed absorption spectral lines. We also present a setup using a birefringent interferometer in front of a simplified camera formed by a plano-convex lens and a linear CCD sensor; this demonstrates the monitoring of SO(2) gas. Results from the laboratory simulation show the feasibility of this method. Outdoor measurements permit determination of the required conditions for on-site real-time measurement.     

Giant Anomalous Hall and Nernst Conductivities in Magnetic All-d Metal Heusler Alloys

All-d Heuslers are a category of novel compounds combining versatile functionalities such as caloric responses and spintronics with enhanced mechanical properties. Despite the promising transport properties (anomalous Hall (AHC) and anomalous Nernst (ANC) conductivities) shown in the conventional Co₂XY Heuslers with p-d hybridization, the all-d Heuslers with only d-d hybridization open a new horizon to search for new candidates with outstanding transport properties. In this work, the AHC and ANC are evaluated for thermodynamically stable ferro/ferri-magnetic all-d-metal regular Heusler compounds based on high-throughput first-principles calculations. It is observed that quite a few materials exhibit giant AHCs and ANCs, such as cubic Re₂TaMn with an AHC of 2011 S cm^-1, and tetragonal Pt₂CrRh with an AHC of 1966 S cm^-1 and an ANC of 7.50 A m^-1K^-1. Comprehensive analysis on the electronic structure reveals that the high AHC can be attributed to the occurrence of the Weyl nodes or gapped nodal lines in the neighborhood of the Fermi level. The correlations between such transport properties and the number of valence electrons are also thoroughly investigated, which provides a practical guidance to tailor AHC and ANC via chemical doping for transverse thermoelectric applications.     

Discrete Time Non-Homogeneous Semi-Markov Reliability Transition Credit Risk Models and the Default Distribution Functions

This paper shows how to apply discrete time non-homogeneous semi-Markov processes (DTNHSMP) with an age index to credit risk. The idea is to consider the credit risk problem as a reliability model indexed by the age and in this way, many semi-Markov results could be adapted to describe credit risk problem. The default state is seen as a “non working state”. As the semi-Markov process is a generalization of Markov process, the presented model can be seen as a more general migration model. In fact, in semi-Markov environment the distribution function (d.f.) of the waiting time before a transition can be of any type and without the strong constraints of the Markov model. Furthermore, some results on the asymptotic behavior of the presented model are given. This permits the construction of the d.f. of the default random variable for each “working state”. An example, constructed manipulating some Standard & Poor’s (S&P) data, is presented.     

Optimal correlation attack on the multiplexer generator

The security of the well-known multiplexer generator with respect to correlation attacks on the data shift register is investigated. Apart from the basic correlation attack exploiting the bitwise correlation between the output sequence and any data input sequence, two new correlation attacks are introduced. One is based on computing the a posteriori probabilities and is statistically optimal, whereas the other makes use of the accumulated bitwise correlation to all data input sequences. It is theoretically argued and experimentally confirmed that the optimal attack requires a significantly shorter output sequence to be successful than the basic attack. The experiments also show that the less complex accumulated correlation attack requires a somewhat longer output sequence than the optimal attack.     

A polyfluoroalkyl imidazolium ionic liquid as iodide ion source in dye sensitized solar cells

We report on the use of a fluorinated imidazolium ionic liquid as a source of iodide ions in solvent-based electrolytes for DSSCs. Efficient dye regeneration and fast charge transport in the fluorinated electrolyte result in an overall improvement of the device performances compared to conventional hydrogenated ionic liquids.