A quadruple well, quadruple polysilicon BiCMOS process for fast 16Mb SRAM's

An advanced, high-performance, quadruple well, quadruple polysilicon BiCMOS technology has been developed for fast 16 Mb SRAM's. A split word-line bitcell architecture, using four levels of polysilicon and two self-aligned contacts, achieves a cell area of 8.61 μm² with conventional I-line lithography and 7.32 μm² with I-line plus phase-shift or with deep UV lithography. The process features PELOX isolation to provide a 1.0 μm active pitch, MOSFET transistors designed for a 0.80 μm gate poly pitch, a double polysilicon bipolar transistor with aggressively scaled parasitics, and a thin-film polysilicon transistor to enhance bitcell stability. A quadruple-well structure improves soft error rate (SER) and allows simultaneous optimization of MOSFET and bipolar performance     

Recent Life Events Preceding Suicide Attempts in a Personality Disorder Sample: Findings From the Collaborative Longitudinal Personality Disorders Study.

Few studies have examined the relationship between life events, suicide attempts, and personality disorders (PDs), in spite of the strong associations between PDs and suicidal behavior, and the poor coping strategies often exhibited by these individuals. The authors examined whether participants with PDs who attempted suicide during the first 3 years of a prospective, longitudinal study were more likely to experience specific life events in the month during and preceding the suicide attempt. Of 489 participants with PDs, 61 attempted suicide during the 3-year, follow-up interval. Results indicated that negative life events, particularly those pertaining to love-marriage or crime-legal matters, were significant predictors of suicide attempts, even after controlling for baseline diagnoses of borderline PD, major depressive disorders, substance use disorders, and a history of childhood sexual abuse. Therefore, certain types of negative life events are unique risk factors for imminent suicide attempts among individuals with PDs. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Associations in the Course of Personality Disorders and Axis I Disorders Over Time.

In this study, the authors examined time-varying associations between schizotypal (STPD), borderline (BPD), avoidant (AVPD), or obsessive-compulsive (OCPD) personality disorders and co-occurring Axis I disorders in 544 adult participants from the Collaborative Longitudinal Personality Disorders Study. The authors tested predictions of specific longitudinal associations derived from a model of crosscutting psychobiological dimensions (L. J. Siever & K. L. Davis, 1991) with participants with the relevant Axis I disorders. The authors assessed participants at baseline and at 6-, 12-, and 24-month follow-up evaluations. BPD showed significant longitudinal associations with major depressive disorder and posttraumatic stress disorder. AVPD was significantly associated with anxiety disorders (specifically social phobia and obsessive-compulsive disorder). Two of the four personality disorders under examination (STPD and OCPD) showed little or no association with Axis I disorders. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Two-Year Stability and Change of Schizotypal, Borderline, Avoidant, and Obsessive-Compulsive Personality Disorders.

The authors examined the stability of schizotypal (STPD), borderline (BPD), avoidant (AVPD) and obsessive-compulsive (OCPD) personality disorders (PDs) over 2 years of prospective multiwave follow-up. Six hundred thirty-three participants recruited at 4 collaborating sites who met criteria for 1 or more of the 4 PDs or for major depressive disorder (MOD) without PD were assessed with semistructured interviews at baseline, 6, 12, and 24 months. Lifetable survival analyses revealed that the PD groups had slower time to remission than the MDD group. Categorically, PD remission rates range from 50% (AVPD) to 61% (STPD) for dropping below diagnostic threshold on a blind 24-month reassessment but range from 23% (STPD) to 38% (OCPD) for a more stringent definition of improvement. Dimensionally, these findings suggest that PDs may be characterized by maladaptive trait constellations that are stable in their structure (individual differences) but can change in severity or expression over time. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

The effects of uncertainty on plan success in a simulated maintenance robot domain

Autonomous robots must be designed to function in real-world domains. These domains are characterized by uncertainty, yet little work has been done to quantify the effects of uncertainty on goal satisfaction. Our research on simulated repair robots indicates that different types of uncertainty have fundamentally different relationships to plan success. This paper investigates the impacts of sensor inaccuracies, exogenous events and failures in both motion and gripper operations. Extensive simulations provide the basis for mathematical models of the relationship between these types of uncertainties and plan success. In addition, the impact of current heuristics such as ‘retry on failure’, and ‘tell me three times’ is investigated. Concluding that even low levels of uncertainty can significantly impact goal satisfaction in a stimulated repair robot domain and that repeated attempts provide significant improvement in plan success rates in the face of uncertainty.     

A selectively deposited poly-gate ITLDD process with self-alignedLDD/channel implantation

An inverse-T lightly doped drain (ITLDD) CMOS process which features improved hot-carrier effects and self-aligned source/drain and channel implantation profiles is presented. Compensation effects by the heavy channel doping on the light N^-/P^- profile are minimized in this ITLDD structure, because the implants are self-aligned to the polysilicon-gate edge. In addition, because selective polysilicon deposition rather than an incomplete poly-gate etchback is used to define the ITLDD structure, a simpler, more manufacturable process is obtained due to improved control of the thin poly-gate shelf thickness     

A comparison of interview and self-report methods for the assessment of borderline personality disorder criteria.

Interview methods are widely regarded as the standard for the diagnosis of borderline personality disorder (BPD), whereas self-report methods are considered a time-efficient alternative. However, the relative validity of these methods has not been sufficiently tested. The current study used data from the Collaborative Longitudinal Personality disorder Study to compare diagnostic base rates and the relative validity of interview and self-report methods for assessing functional outcome in BPD. Although self-report yielded higher base rates of criteria endorsement, results did not support the common assumption that diagnostic interviews are more valid than self-reports, but instead indicated the combined use of these methods optimally identifies BPD criteria. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Locally advanced primary colorectal cancer: intraoperative electron and external beam irradiation +/- 5-FU

PURPOSE: For locally advanced primary colorectal cancer, our institution has combined intraoperative electron irradiation (IOERT) with external beam irradiation (EBRT) +/- 5-fluorouracil (5-FU) and surgical resection. Disease control and survival were compared with the current IOERT and prior non-IOERT regimens. METHODS AND MATERIALS: From April 1981 through August 1995, 61 patients received an IOERT dose of 10-20 Gy, usually combined with 45-55 Gy of fractionated EBRT; 56 had minimum follow-up of 18 months. The amount of residual disease remaining at IOERT after exploration and maximal resection in the 56 patients was gross in 16, < or = microscopic in 39, and unresected in 1. RESULTS: Survival (SR) and disease control were analyzed as a function of potential prognostic factors. Factors that achieved statistical significance for improved overall survival included treatment sequence of preop EBRT + 5-FU (vs. postoperative EBRT + 5-FU, p = 0.003) and < or = microscopic residual disease after maximal resection (vs. gross residual, p = 0.005). Those that appeared to favorably impact disease-free survival included EBRT + 5-FU (vs. EBRT alone, p = 0.01), < or = microscopic residual (vs. gross, p = 0.0014), and colon site of primary (vs. rectum, p = 0.009). Failures within an irradiation field have occurred in 4 of 16 patients (25%) who presented with gross residual after partial resection vs. 2 of 39 (5%) with < or = microscopic residual after gross total resection (p = 0.01). The significant prognostic factors for a decrease in distant metastases were the same as for disease-free SR with respective p-values of 0.013 (EBRT + 5-FU), 0.008 (microscopic residual), and 0.03 (colon primary). The current data suggests a relationship between IOERT dose and incidence of Grade 2 or 3 neuropathy (< or = 12.5 Gy--1 of 29 or 3%, > or = 15 Gy--6 of 26 or 23%, p = 0.03). CONCLUSIONS: Both overall survival and disease control appear to be improved with the addition of IOERT to standard treatment. More routine use of systemic therapy is indicated as a component of IOERT containing treatment regimens because the incidence of distant metastases was 50% of patients at risk.     

The effects of boron penetration on p+ polysilicon gatedPMOS devices

The penetration of boron into and through the gate oxides of PMOS devices which employ p⁺ doped polysilicon gates is studied. Boron penetration results in large positive shifts in V_FB , increased PMOS subthreshold slope and electron trapping rate, and decreased low-field mobility and interface trap density. Fluorine-related effects caused by BF₂ implantations into the polysilicon gate are shown to result in PMOS threshold voltage instabilities. Inclusion of a phosphorus co-implant or TiSi₂ salicide prior to gate implantation is shown to minimize this effect. The boron penetration phenomenon is modeled by a very shallow, fully-depleted p-type layer in the silicon substrate close to the SiO ₂/Si interface     

Disposable polysilicon LDD spacer technology

An advanced 0.5-μm CMOS disposable lightly doped drain (LDD) spacer technology has been developed. This 0.5-μm CMOS technology features surface-channel LDD NMOS and PMOS devices, n⁺/p⁺ poly gates, 125-A-thick gate oxide, and Ti-salicided source/drain/gate regions. Using only two masking steps, the NMOS and PMOS LDD spacers are defined separately to provide deep arsenic n⁺ regions for lower salicided junction leakage, while simultaneously providing shallow phosphorus n^- and boron p^- regions for improved device short-channel effects. Additionally, the process allows independent adjustment of the LDD and salicide spacers to optimize the LDD design while avoiding salicide bridging of source/drain to gate regions. The results indicate extrapolated DC hot-carrier lifetimes in excess of 10 years for a 0.3-μm electrical channel-length NMOS device operated at a power-supply voltage of 3.3 V