Synthesis,morphology and device characterizations of a new organic semiconductor based on 2,6-diphenylindenofluorene

A new organic semiconductor, 2,6-diphenylindenofluorene (DPIF), was synthesized in four steps with a high overall yield of 49.3%. The morphology of thin films of DPIF that were formed under different substrate temperatures was examined by atomic force microscopy and X-ray diffraction analysis. Two different crystalline phases were found to exist depending on the deposition conditions. The DPIF thin film emits around 500–530 nm, while the OLED based on DPIF emits green light with a maximum output over 150 Cd/m² under 35 V. Two typical transistor devices, thin-film transistor (TFT) and semiconductor-metal-semiconductor (SMS) transistor, were fabricated and characterized. DPIF shows a weak n-type character from the TFT device measurement, while SMS transistors using DPIF as an emitter behave like permeable-base transistors with low operating voltages in both common-base and common-emitter modes and a feature of current amplification. Our results demonstrate however, that further research efforts are necessary in order to prevent the observed instabilities. These are quite important, considering that the common-emitter mode is widely used in applications requiring not only switching capability, but also current amplification.     

A high-voltage optoelectronic GaAs static induction transistor

Experimental realization of an optically activated, high-voltage GaAs static induction transistor (SIT) is reported. In the forward blocking state, the breakdown voltage of the device was ~200 V, while in the conduction state, on-state current densities exceeding 150 A/cm² were obtained. In the floating-gate configurations (gate open), the specific on-resistance of the device was ~50 mΩ-cm². Optical modulation of the device was achieved using a compact semiconductor laser array as the triggering source. In this mode, a gate-coupled RC network was implemented, resulting in an average switching energy gain (load energy/optical energy) of ~30. This mode of operation is applicable to series-coupled devices for pulsed switching at higher power levels     

基于Encore XP！的多电压系统架构的全新电源监督与定序方案

目前，绝大多数电子系统（例如通讯／电子通讯服务器、家庭娱乐产品、个人计算机和外围设备以及数码相机和可携式摄像机、蜂窝电话和便携式媒体播放器）的设计都是基于多电压总线架构。在这些系统中，为了确保精确地摔制向系统处理器和其他IC传输的电能，连续监控和调节启动过程、稳定状态操作、待机和省电模式阶段的系统电压至关重要。此外，根据用户执行的阈值／限制参数，例如监控启用故障情况的检测并尽可能减少代码执行问题，会在其他方面损坏数据内存或导致系统不正常地执行操作。     

Manufacturable GaAs VFET for power switching applications

We have developed a manufacturable process to fabricate high performance GaAs vertical field effect transistors (VFET's). Our process uses ion implantation to form the gate as opposed to previous VFET processes, which used epitaxial regrowth or angled evaporation. In this process, trenches 1.2 μm wide by 0.6 μm deep with a period of 2.4 μm are formed by reactive ion etch (RIE) then the gate region is formed at the bottom of the trench by Ar/C ion co-implantation. Current handling capability of these devices exceeds 200 A/cm² with a specific on-resistance of 0.25 mΩ-cm² and calculated delay times of 13.9 ps     

基于Encore XP!(R)的多电压系统架构的全新电源监督与定序方案

目前,绝大多数电子系统(例如通讯/电子通讯服务器、家庭娱乐产品、个人计算机和外围设备以及数码相机和可携式摄像机、蜂窝电话和便携式媒体播放器)的设计都是基于多电压总线架构.在这些系统中,为了确保精确地控制向系统处理器和其他IC传输的电能,连续监控和调节启动过程、稳定状态操作、待机和省电模式阶段的系统电压至关重要.