OC-192 transmitter and receiver in standard 0.18-/spl mu/m CMOS

This paper presents the first fully integrated SONET OC-192 transmitter and receiver fabricated in a standard 0.18-/spl mu/m CMOS process. The transmitter consists of an input data register, 16-b-wide first-in-first-out (FIFO) circuit, clock multiplier unit (CMU), and 16:1 multiplexer to give a 10-Gb/s serial output. The receiver integrates an input amplifier for 10-Gb/s data, clock and data recovery circuit (CDR), 1:16 demultiplexer, and drivers for low-voltage differential signal (LVDS) outputs. An on-chip LC-type voltage-controlled oscillator (VCO) is employed by both the transmitter and receiver. The chipset operates at multiple data rates (9.95-10.71 Gb/s) with functionality compatible with the multisource agreement (MSA) for 10-Gb transponders. Both chips demonstrate SONET-compliant jitter characteristics. The transmitter 10.66-GHz output clock jitter is 0.065 UI/sub pp/ (unit interval, peak-to-peak) over a 50-kHz-80-MHz bandwidth. The receiver jitter tolerance is more than 0.4 UI/sub pp/ at high frequencies (4-80 MHz). A high level of integration and low-power consumption is achieved by using a standard CMOS process. The transmitter and receiver dissipate a total power of 1.32 W at 1.8 V and are packaged in a plastic ball grid array with a footprint of 11/spl times/11 mm/sup 2/.     

A 90-dB SNR 2.5-MHz output-rate ADC using cascaded multibitdelta-sigma modulation at 8× oversampling ratio

A 16-b 2.5-MHz output-rate analog-to-digital converter (ADC) for wireline communications and high-speed instrumentation has been developed. A 2-1-1 cascaded delta-sigma modulator (DSM) employing 4-b quantizers in every stage makes all quantization noise sources negligible at 8× oversampling ratio, Data weighted averaging with bi-directional rotation eliminates tones generated by multibit digital-to-analog converter (DAC) nonlinearity to increase the spurious-free dynamic-range (SFDR). Switched-capacitor design techniques using low-threshold transistors reduce front-end sampling distortion. The 24.8 mm² chip in 0.5-μm CMOS also integrates the decimation filter and voltage reference. The ADC achieves 90-dB signal-to-noise ratio (SNR) in the 1.25-MHz bandwidth and 102-dB SFDR with 270-mW power dissipation     

Low-temperature mobility measurements on CMOS devices

The surface channel mobility of carriers in n- and p-MOS transistors fabricated in a CMOS process was accurately determined at low temperatures down to 5 K. The mobility was obtained by an accurate measurement of the inversion charge density using a split C-V technique and the conductance at low drain voltages. The split C-V technique was validated at all temperatures using a one-dimensional Poisson solver (MOSCAP) which was modified for low-temperature application. The mobility dependence on the perpendicular electric field for different substrate bias values appeared to have different temperature dependences for n- and p-channel devices. The electron mobility increased with a decrease in temperature at all gate voltages. On the other hand, the hole mobility exhibited a different temperature behavior depending upon whether the gate voltage corresponded to strong inversion or was near threshold     

An 81-MHz IF receiver in CMOS

An 81-MHz CMOS IF receiver for digital wireless applications is presented. The receiver consists of a continuous-time IF amplifier, a subsampling switched-capacitor gain stage, and a sixth-order bandpass ΣΔ A/D converter. Incorporating 24 dB of programmable gain, the receiver achieves 92 dB of dynamic range in a 200 kHz bandwidth. Due to its IF sampling nature, the reciever is immune to de offset, flicker noise, and errors due to mismatches between I and Q signal paths. By utilizing a pseudo two-path resonator architecture in the bandpass ΣΔ A/D converter, a stable passband center frequency which is immune to capacitor mismatch is achieved. Implemented in 0.8-μm CMOS, this chip uses a single 3 V supply and consumes 14.4 mW of power     

A fully integrated SONET OC-48 transceiver in standard CMOS

This paper presents the first fully integrated, SONET OC-48 (2.488/2.666 Gb/s) transceiver using a standard CMOS process. Careful design methodology combined with a standard CMOS technology allows performance exceeding SONET requirements with the added benefits of reduced power dissipation, higher integration levels, and simplified manufacturability as compared to other fabrication technologies. This chip, designed using a standard 0.18-μm CMOS technology, has a total power dissipation of 500 mW and an rms jitter of 1 ps