A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Transmitter and Local LO-Path Phase Shifting

Integration of mm-wave multiple-antenna systems on silicon-based processes enables complex, low-cost systems for high-frequency communication and sensing applications. In this paper, the transmitter and LO-path phase-shifting sections of the first fully integrated 77-GHz phased-array transceiver are presented. The SiGe transceiver utilizes a local LO-path phase-shifting architecture to achieve beam steering and includes four transmit and receive elements, along with the LO frequency generation and distribution circuitry. The local LO-path phase-shifting scheme enables a robust distribution network that scales well with increasing frequency and/or number of elements while providing high-resolution phase shifts. Each element of the heterodyne transmitter generates +12.5 dBm of output power at 77 GHz with a bandwidth of 2.5 GHz leading to a 4-element effective isotropic radiated power (EIRP) of 24.5 dBm. Each on-chip PA has a maximum saturated power of +17.5 dBm at 77 GHz. The phased-array performance is measured using an internal test option and achieves 12-dB peak-to-null ratio with two transmit and receive elements active     

Nonlinear transmission lines for pulse shaping in silicon

Nonlinear transmission lines (NLTL) are used for pulse shaping. We developed the theory of pulse propagation through the NLTL. The problem of a wide pulse degenerating into multiple pulses rather than a single pulse is solved by using a gradually scaled NLTL. We exploit certain favorable properties of accumulation-mode MOS varactors to design an NLTL that can simultaneously sharpen both rising and falling edges. There is a good agreement among the theory, simulations, and measurements.     

Fractal capacitors

A linear capacitor structure using fractal geometries is described. This capacitor exploits both lateral and vertical electric fields to increase the capacitance per unit area. Compared to standard parallel-plate capacitors, the parasitic bottom-plate capacitance is reduced. Unlike conventional metal-to-metal capacitors, the capacitance density increases with technology scaling. A classic fractal structure is implemented with 0.6-μm metal spacing, and a factor of 2.3 increase in the capacitance per unit area is observed. It is shown that capacitance boost factors in excess of ten may be possible as technology continues to scale. A computer-aided-design tool to automatically generate and analyze custom fractal layouts has been developed     

A noise-shifting differential Colpitts VCO

A novel noise-shifting differential Colpitts VCO is presented. It uses current switching to lower phase noise by cyclostationary noise alignment and improve the start-up condition. A design strategy is also devised to enhance the phase noise performance of quadrature coupled oscillators. Two integrated VCOs are presented as design examples.     

Targeted design of polyaniline-graphene oxide,barium-strontium titanate,hard-soft ferrite,and polyester multi-phase nanocomposite for highly efficient microwave absorption

The current paper focuses on synthesizing a high-efficiency microwave absorber via incorporating the nanofillers of graphene oxide-polyaniline (GO-PANI), barium-strontium titanate (BST), and soft-hard ferrite within the polyester matrix. The nanocomposite magnets of (Ba_0.5Sr_0.5Fe₁₂O₁₉)_1-x hard/(CoFe₂O₄)_x soft (x = 0.2, 0.5, and 0.8) were prepared using sol-gel auto-combustion method. The GO-PANI and BST were successfully synthesized by in situ polymerization and improved polymerization, respectively. The phase structure, chemical structure, morphology, and microwave absorption properties of the synthesized nanocomposites were characterized by X-ray diffractometer (XRD), Fourier-transform infrared spectroscopy (FT-IR), and scanning electron microscope (SEM), vector network analyzer (VNA) techniques, respectively. The results showed that the synergistic effects of the combination of dielectric (BST), conductive (GO-PANI), and magnetic materials (hard-soft ferrites) provided the reflection loss values of less than ?20 dB (>99% absorption) in the X-band region. The minimum reflection loss of ?35 dB (>99.99% absorption) was obtained by the optimal formulation including (Ba_0.5Sr_0.5Fe₁₂O₁₉)_0.2 (CoFe₂O₄)_0.8, and the weight ratio of 1: 2 for both BST/soft-hard ferrite and hard-soft ferrite + BST/GO-PANI with the thickness of 1 mm. According to the results, the thickness factor plays a key role in improving the impedance matching. Consequently, the proposed nanocomposite can be employed as a novel kind of microwave absorbers with good impendence matching and high absorption.     

Comments on “Design issues in CMOS differential LCoscillators” [and reply]

For the original paper see ibid., vol. 34, no. 5, p. 717-24 (1999). The commenter points out that the phase noise difference reported in the aforementioned paper appears to have a topological cause, and he presents a simple analysis to show that the difference is 6 dB under otherwise identical conditions. In reply, the authors clarify some points in their original work     

Virtual damping and Einstein relation in oscillators

This paper presents a new physical theory of oscillator phase noise. Built around the concept of phase diffusion, this work bridges the fundamental physics of noise and existing oscillator phase-noise theories. The virtual damping of an ensemble of oscillators is introduced as a measure of phase noise. The explanation of linewidth compression through virtual damping provides a unified view of resonators and oscillators. The direct correspondence between phase noise and the Einstein relation is demonstrated, which reveals the underlying physics of phase noise. The validity of the new approach is confirmed by consistent experimental agreement.     

Concepts and methods in optimization of integrated LC VCOs

Underlying physical mechanisms controlling the noise properties of oscillators are studied. This treatment shows the importance of inductance selection for oscillator noise optimization. A design strategy centered around an inductance selection scheme is executed using a practical graphical optimization method to optimize phase noise subject to design constraints such as power dissipation, tank amplitude, tuning range, startup condition, and diameters of spiral inductors. The optimization technique is demonstrated through a design example, leading to a 2.4-GHz fully integrated, LC voltage-controlled oscillator (VCO) implemented using 0.35-μm MOS transistors. The measured phase-noise values are -121, -117, and -115 dBc/Hz at 600-kHz offset from 1.91, 2.03, and 2.60-GHz carriers, respectively. The VCO dissipates 4 mA from a 2.5-V supply voltage. The inversion mode MOSCAP tuning is used to achieve 26% of tuning range. Two figures of merit for performance comparison of various oscillators are introduced and used to compare this work to previously reported results     

A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-/spl mu/m CMOS

A 24-GHz +14.5-dBm fully integrated power amplifier with on-chip 50-/spl Omega/ input and output matching is demonstrated in 0.18-/spl mu/m CMOS. The use of substrate-shielded coplanar waveguide structures for matching networks results in low passive loss and small die size. Simple circuit techniques based on stability criteria derived result in an unconditionally stable amplifier. The power amplifier achieves a power gain of 7 dB and a maximum single-ended output power of +14.5-dBm with a 3-dB bandwidth of 3.1 GHz, while drawing 100 mA from a 2.8-V supply. The chip area is 1.26 mm/sup 2/.