Mobile access to an ATM network using a CDMA air interface

The paper presents a possible integrated system concept for a direct sequence spread spectrum CDMA radio access system suitable for third-generation mobile radio. The system has been conceived to take account of such diverse services as low bit rate voice and quasi-broadband services at rates of up to 256 kb/s. Broadband services imply the use of the ATM transmission technique, and particular attention is paid to the mutual impact of CDMA and ATM. An efficient automatic repeat request technique is described which gives a suitably low overall error rate and a soft capacity limit. The proposed solution represents a quantum advance on today's CDMA solutions and integrates well with the ATM fixed network     

Variational integrators – A continuous time approach

This article presents a family of variational integrators from a continuous time point of view. A general procedure for deriving symplectic integration schemes preserving an energy‐like quantity is shown, which is based on the principle of virtual work. The framework is extended to incorporate holonomic constraints without using additional regularization. In addition, it is related to well‐known partitioned Runge–Kutta methods and to other variational integration schemes. As an example, a concrete integration scheme is derived for the planar pendulum using both polar and Cartesian coordinates. Copyright © 2016 John Wiley & Sons, Ltd.     

Merged CMOS/bipolar current switch logic (MCSL)

A merged CMOS/bipolar current switch logic (MCSL) is presented. CMOS/ECL level conversion and logical operation are realized simultaneously. This circuit technique allows a supply voltage reduction to 3.3 V. A carry delay time of 150 ps/bit for a 4-bit BiCMOS full adder was measured. This is about five times faster than an optimized CMOS adder.<>     

An Energetic N‐Oxide and N‐Amino Heterocycle and its Transformation to 1,2,3,4‐Tetrazine‐1‐oxide

This study reports the preparation of 1‐amino‐1,2,3‐triazole‐3‐oxide (DPX2) and its transformation to 1,2,3,4‐tetrazine‐1‐oxide. DPX‐2 provides insight into a novel N‐oxide/N‐amino high‐nitrogen system, being the first energetic material in this class. The ability of this material to undergo a nitrene insertion forming 1,2,3,4‐tetrazine‐1‐oxide was also studied, and evidence for this material, the first non‐benzoannulated 1,2,3,4‐tetrazine‐1‐oxide, is presented. The existence of both of these materials opens new strategies in energetic materials design. DPX2 was characterized chemically (Infrared, Raman, NMR, X‐ray) and as a high explosive in terms of energetic performances (detonation velocity, pressure, etc.) and sensitivities (impact, friction, electrostatic). DPX‐2 was found to possess good thermal stability and moderate sensitivities, indicating the viability of N‐amino N‐oxides as a strategy for the preparation of new energetic materials.     

针对新一代批量挤压印刷商机的技术进展

摩尔定律(Moore's Law)促使消费者对于新一代电子产品功能密度的期望不断增加.例如,现在的手机体积已缩小至人类生理机能所接受的程度,但是用户每次选用新机型时总是期待能享有额外的功能和特性.其它电子产品如媒体播放机等的体积也持续缩小,直到可佩戴型电子产品时代的来临为止.     

A 3.8-ns 16 K BiCMOS SRAM

A 2 K×8-b, ECL 100 K compatible BiCMOS SRAM with 3.8-ns (-4.5 V, 60°) address access time is described. The precisely controlled bit-line voltage swing (60 mV), a current sensing method, and optimized ECL decoding circuits permit a reliable and fast readout operation. The SRAM features an on-chip write pulse generator, latches for input and output bits, and a full six-transistor CMOS cell array. Power dissipation is approximately 2 W, and the chip size is 3.9×5.9 mm². The SRAM was based on 1.2-μm BiCMOS, using double-metal, triple-polysilicon, and self-aligned bipolar transistors