Fabrication of a poly-Si thin-film transistor with storage capacitor

The fabrication process of a low-temperature poly-Si thin-film transistor (TFT) with a storage capacitor was studied. The atmospheric-pressure chemical-vapour deposited SiO₂ protected the buried indium tin oxide (ITO) from reduction by a pure H₂ plasma treatment that was essential for the effective improvement of the poly-Si TFT characteristics. Thus, a storage capacitor with an ITO (picture electrode)-SiO₂-ITO (buried common electrode) structure was successfully fabricated. The poly-Si TFT with a channel width/length W/L ratio of 5 drove a 3 pF storage capacitor in 2 μs, and it showed superior driverability for LCD use. The TFT also had good hold characteristics under illumination for the realization of grey-scale representation.     

Applications of computer and numerical analysis techniques in welding research

In recent years, computer technology has made remarkable progress and a computer has become an indispensable tool for both engineers and scientists. In this article, utilization of computers in welding research is briefly summarized. Their use in numerical analysis is particularly discussed and applied to physical phenomena in molten pool, hydrogen diffusion and residual stresses due to welding. A comparison is made between theoretical and experimental results.     

Three-dimensional motion of the upper cervical spine in rheumatoid arthritis

Rheumatoid arthritis frequently contributes to instability of the upper cervical spine. Rotational instability of the upper cervical spine was evaluated in rheumatoid arthritis patients using biplanar x-ray photogrammetry. Three-dimensional cervical motion and the instantaneous axis of rotation of the atlas relative to the axis were evaluated in normal and rheumatoid arthritis patients during axial rotation in the horizontal plane. Anterior atlantoaxial subluxation did not increase during axial head rotation in either the atlantoaxial subluxation or the vertical subluxation groups, while the instantaneous axes of rotation were distributed posteriorly in the dens in the RA-normal group, but were widely scattered in the atlantoaxial subluxation group.     

A 10-s doping technology for the application of low-temperaturepolysilicon TFTs to giant microelectronics

A bucket-type high-density (0.25-1.2-mA/cm²) low-energy (500-2000 V) ion source was utilized for high-speed phosphorus doping directly into a thin polysilicon layer without cap SiO₂. Doping gas with He dilution was selected to reduce etching of polysilicon film. Excimer laser (XeCl, 8 mm×8 mm) pulse annealing was introduced to activate effectively the doped impurity. The combination of these techniques provided a practically low sheet resistance for the TFT source, drain, and gate with a short time doping. The low-temperature polysilicon TFT fabricated with a doping time of 10 s had characteristics comparable to those of that fabricated by a longer time doping or conventional ion implantation, showing the practicality of this technology and its promise for giant microelectronics     

氟化活性炭纤维对极性分子的吸附

将活性炭纤维（ACF）与氟气反应制备出氟化活性炭纤维（FACF），根据将FACF与参照试样XPS的对比，碳原子是以sp^3杂化轨道同氟原子形成共健键。αs图分析氮吸附等温线的线果表明，ACF氟化后其比表面积和微孔容积都显著降低，微孔宽度基本不变，ACF的水吸附等温线呈V型，而FACF对水的吸附量极小；FACF的微孔表面具有完美的憎水性和高稳定性，乙醇和甲醇在ACF上的吸附等温线是Ⅰ型，在FACF上接近于Ⅰ型，但吸附量显著降低。     

A new fabrication technology for AlGaAs/GaAs HEMT LSIs using InGaAsnonalloyed ohmic contacts

The authors studied the nonalloyed ohmic characteristics of HEMTs (high electron mobility transistors). At high integration levels, nonalloyed ohmic contacts were found to have two advantages: an extremely short ohmic length with low parasitic source series resistance and direct connection between the source/drain and gate with the same metal. The propagation delay in a ring oscillator with a single-metal source/drain and gate formed simultaneously was 37 ps/gate (L _g=0.9 μm). The very short ohmic metal contacts and just three contact holes made it possible to reduce the memory cell area greatly. The cell is 21.5×21.5 μm², one of the smallest ever reported for a GaAs-based static RAM. Using smaller load HEMTs or resistor loads in the memory cell, combined with nonalloyed ohmic technology with quarter- or subquarter-micrometer-gate HEMTs it is possible to fabricate a very-high-speed LSI such as a 64-kb static RAM with a reasonable chip size     

Ultrahigh-speed HEMT LSI technology for supercomputer

The current status of high electron mobility transistor (HEMT) technology at Fujitsu for high-performance VLSI is presented, focusing on device performance in the submicrometer dimensional range and the HEMT LSIs implemented in supercomputer systems. The HEMT is a very promising device for ultrahigh-speed LSI/VLSI applications because of the high-mobility GaAs/AlGaAs heterojunction structure. A 1.1 K-gate bus-driver logic LSI has been developed to demonstrate the high-speed data transfer in a high-speed parallel processing system at room temperature, operating at 10.92 GFLOPS. A cryogenic 3.3 K-gate random number generator logic LSI with maximum clock frequency of 1.6 GHz has also been developed to demonstrate the high-clock-rate system operations at liquid-nitrogen temperature. For VLSI level complexity, a HEMT 64-kb static RAM with 1.2-ns access operation and a 45 K-gate gate array with 35-ps logic delay have been developed operating at room temperature, demonstrating the high performance required for future high-speed computer systems     

Fabrication of damascene Cu wirings using solid acidic catalyst

The copper damascene process is one of the most promising technologies for fabricating Cu wirings for electronic devices such as LSIs. In this research, the fabrication of damascene Cu wirings was conducted using solid acidic catalyst. When a Cu-plated wafer, whose oxide is a basic oxide is dipped into a mixture of oxidizing solution and acidic solution, surface atoms are ionized and etched off into the solution. However, because conventional nonelectrolytic etching does not have a reference surface, it is difficult to utilize for planarization. Therefore, a new nonelectrolytic machining method using a cation-exchange fabric instead of an acidic solution was developed. To be more precise, the planarization of a Cu-plated wafer was carried out by rubbing with the cation-exchange fabric in ozone water. Basically, this method exploits chemical reactions so that the physical properties of the workpiece surface are not deteriorated. Furthermore, this method uses no chemicals except for ozone water, which easily dissociates into water and oxygen molecules; thus, this method is a low-cost, environmentally friendly process. In this paper, as a preliminary experiment, the nonelectrolytic etching of a Cu sample using solutions of O₃ and CO₂ was carried out to inspect the dependence of the etching rate on [O₃] and [H⁺]. The results indicate that the etching rate increased as [O₃] and [H⁺] increased. When [H⁺] was high relative to [O₃], a smooth etch-pit-free surface was achieved. Next, nonelectrolytic etching using a cation-exchange fabric was carried out, and properties similar to those in the case of etching using solutions were obtained. Finally, damascene Cu wirings were fabricated using ozone water and a cation-exchange catalyst.     

Accelerator Analysis of Tributyltin Adsorbed onto the Surface of a Tributyltin Resistant Marine Pseudoalteromonas sp. Cell

Tributyltin (TBT) released into seawater from ship hulls is a stable marine pollutant and obviously remains in marine environments. We isolated a TBT resistant marine Pseudoalteromonas sp. TBT1 from sediment of a ship’s ballast water. The isolate (10^{9.3 ± 0.2} colony-forming units mL⁻¹) adsorbed TBT in proportion to the concentrations of TBTCl externally added up to 3 mM, where the number of TBT adsorbed by a single cell was estimated to be 10^8.2. The value was reduced to about one-fifth when the lysozyme-treated cells were used. The surface of ethanol treated cells became rough, but the capacity of TBT adsorption was the same as that for native cells. These results indicate that the function of the cell surface, rather than that structure, plays an important role to the adsorption of TBT. The adsorption state of TBT seems to be multi-layer when the number of more than 10^6.8 TBT molecules is adsorbed by a single cell.     

Characteristics of epoxy resin cured with in situ polymerized curing agent

In order to improve the heat resistance of a cured epoxy resin together with reducing the viscosity of the resin composition, an epoxy resin was cured with a curing agent formed from the radical copolymerization of vinyl monomers during the cure process of the epoxy resin. N-phenylmaleimide and p-acetoxystyrene were used as vinyl monomers of the curing agent. The epoxy resin was cured by the insertion reaction of the ester group of the in situ polymerized curing agent and the epoxy group of the epoxy resin. In the cure system of the epoxy and the phenol resins, reduction of the viscosity of the resin composition was achieved by replacing some or all of the phenol resin with these monomers. When all phenol resins were replaced by these monomers, the viscosity of resin composition (0.01 Pa s at 70 °C) decreased by about 1/2000 compared with that of the system with only phenol resin (21 Pa s at 70 °C). The glass transition temperature (T_g) of the cured resin with no phenols was 174 °C, an improvement of 17 °C compared with that of the system cured with only phenol resin. The flexural strength of the new resins remained unchanged.