Breakdown behavior of GaAs/AlGaAs HBTs

Avalanche breakdown behavior at the collector junction of the GaAs/AlGaAs HBT (heterojunction bipolar transistor) has been studied. Junction breakdown characteristics displaying hard breakdown, soft breakdown, and negative resistance breakdown behavior were observed and are interpreted by analysis of localized microplasma effects, uniform microplasma-free behavior, and associated current gain measurements. Light emission from the collector-base junction of the GaAs/AlGaAs HBT was observed and used to investigate breakdown uniformity. Using a simple punchthrough breakdown model, the theoretical breakdown curves at different collector doping concentrations and thicknesses were computed and found to be in agreement with maximum breakdown voltages measured from devices displaying the most uniform junction breakdown. The serious current gain degradation of GaAs/AlGaAs HBTs at low current densities was analyzed in connection with the measurement of a large collector-emitter breakdown voltage. The unexpected functional relationship between the collector-emitter breakdown voltage and collector-base breakdown voltage is explained by the absence of a hole-feedback effect for devices not exhibiting transistor action     

Band offsets of In0.30Ga0.70As/In0.29Al0.71As heterojunction grown on GaAs substrate

Temperature-dependent current-voltage measurement was employed to study the band offsets of the In_0.30Ga_0.70As/In _0.29Al_0.71As heterojunction. The conduction band discontinuity was determined to be 0.71±0.05 eV which corresponds to a conduction band offset to bandgap difference ratio ~0.66. The comparison between experimental and theoretical results is presented     

Optimal periodic forcing of nonlinear chemical processes for performance improvements

Unsteady-state periodic operations can improve the optimal steady-state performance of nonlinear chemical processes. To examine if the optimal periodic operation is proper and to obtain the optimal forcing functions subject to various control and state constraints it is suggested in this paper to convert the problems into a form which is suitable for constrained nonlinear programming. The adopted numerical optimization method is based on employing the control parametrization technique and is thus capable of dealing with the problem of multiple input forcings and obtaining optimal forcing functions and/or parameters while subject to general constraints. Besides, it provides information about to what extent the process performance can be improved by adopting the optimal periodic control.     

Boundary effects on the optical properties of InGaN multiple quantum wells

We examine the issues of spontaneous and piezoelectric polarization discontinuity on the optical properties of 3.0-nm-thick indium gallium nitride (InGaN) multiple quantum wells (MQWs). A quench of band-edge emission from the cap GaN layer is observed when the photoexcitation source is changed from a 355- to a 248-nm laser. The interband transitions from the InGaN wells exhibit a linear dependence on the 1) spectral blue shift of /spl sim/8.5/spl times/10/sup -18/ meV /spl middot/ cm/sup 3/ and 2) change of the internal field of /spl sim/3/spl times/10/sup -14/ meV /spl middot/ cm/sup 2/ with the injected carrier density up to N/sub inj//spl sim/10/sup 19/ cm/sup -3/ at 77 K. These observations are attributed to the redistribution of photogenerated carriers in the InGaN wells due to the polarization discontinuity at the QW interface and the surface band bending effect. By incorporating an additional boundary condition of surface Fermi-level pinning into the Poisson equation and the band-structure analysis, it is shown the emission from the InGaN-GaN MQWs is dominant by the recombination between the high-lying subbands and the screening of internal field effects.     

A combined method using modified routh stability array and MSE criterion for the reduction of discrete‐time systems

Abstract

A new mixed method using modified stability array and mean‐square error (MSE) criterion is proposed for deriving reduced‐order 2‐transfer functions for discrete‐time systems. More precisely, the modified Routh stability array is used to obtain the reduced‐order denominator, thus ensuring stability preservation, while the numerator is obtained by minimizing the mean‐square error between the unit step responses of the original system and reduced model. The main feature of the method is that it does not actually evaluate the system and model responses in the step of minimizing mean‐square error.     

Balancing reduction of linear systems having multiple delays

Abstract

In this paper we apply the balancing reduction method to derive reduced‐order models for linear systems having multiple delays. The time‐domain balanced realization is achieved through computing the controllability and observability gramians in the frequency domain. With the variable transformation s = i tan(θ/2), the gramians of linear multi‐delay systems can be accurately evaluated by solving first‐order differential equations over a finite domain. The proposed approach is computationally superior to that of using the two‐dimensional realization of delay differential systems.     

QFT template generation for time-delay plants based on zero-inclusion test

Plant template generation is the key step in applying quantitative feedback theory (QFT) to design robust control for uncertain systems. In this paper we propose a technique for generating plant templates for a class of linear systems with an uncertain time delay and affine parameter perturbations in coefficients. The main contribution lies in presenting a necessary and sufficient condition for the zero inclusion of the value set f(T,Q)={f(τ,q): τT[τ⁻,τ⁺], qQ∏_k=0^m−1[q_k⁻,q_k⁺]}, where f(τ,q)=g(q)+h(q)e^−jτω*, g(q) and h(q) are both complex-valued affine functions of the m-dimensional real vector q, and ω^* is a fixed frequency. Based on this condition, an efficient algorithm which involves, in the worst case, evaluation of m algebraic inequalities and solution of m2^m−1 one-variable quadratic equations, is developed for testing the zero inclusion of the value set f(T,Q). This zero-inclusion test algorithm allows one to utilize a pivoting procedure to generate the outer boundary of a plant template with a prescribed accuracy or resolution. The proposed template generation technique has a linear computational complexity in resolution and is, therefore, more efficient than the parameter gridding and interval methods. A numerical example illustrating the proposed technique and its computational superiority over the interval method is included.     

Terahertz Microchip for Illicit Drug Detection

To accurately detect minute amounts of substances without disturbing the surroundings of target molecules has been a major goal in bioanalytical technology. Here by integrating an optoelectronic terahertz (THz) microsource into a glass-substrated microchip within the near-field distance, we demonstrate a compact, label-free, noninvasive, and sensitive microbiosensing system with low-power consumption. The demonstrated THz microchip allows us to locally specify various illicit drug powders with weights of nanograms, with a promising future for rapid identification of the static status or even the dynamics of various biomolecules     

InGaAsSb/InP Double Heterojunction Bipolar Transistors Grown by Solid-Source Molecular Beam Epitaxy

This letter investigates the dc characteristics of a double heterojunction bipolar transistor (DHBT) with a compressively strained InGaAsSb base, which is grown by solid-source molecular beam epitaxy. The novel InP/InGaAsSb HBT has a lower base/emitter (B/E) junction turn-on voltage, a lower offset voltage, and a junction ideality factor closer to unity than the conventional InP/InGaAs composite collector DHBT. These characteristics are attributed to the transistor's type-I B/E junction and type-II base/collector junction, which facilitates carrier transport for low power, high current density, and high-speed operation. Heterojunction bipolar transistors (HBTs), InP/InGaAsSb, molecular beam epitaxy (MBE).     

Generation of robust root loci for linear systems with parametric uncertainties in an ellipsoid

Given a parametric polynomial family p(s; Q) := {ⁿ _k=0 a_k (q)s^k : q ] Q}, Q R ^m , the robust root locus of p(s; Q) is defined as the two-dimensional zero set _p,Q := {s ] C:p(s; q) = 0 for some q ] Q}. In this paper we are concerned with the problem of generating robust root loci for the parametric polynomial family p(s; E) whose polynomial coefficients depend polynomially on elements of the parameter vector q ] E which lies in an m-dimensional ellipsoid E. More precisely, we present a computational technique for testing the zero inclusion/exclusion of the value set p(z; E) for a fixed point z in C, and then apply an integer-labelled pivoting procedure to generate the boundary of each subregion of the robust root locus _p,E . The proposed zero inclusion/exclusion test algorithm is based on using some simple sufficient conditions for the zero inclusion and exclusion of the value set p(z,E) and subdividing the domain E iteratively. Furthermore, an interval method is incorporated in the algorithm to speed up the process of zero inclusion/exclusion test by reducing the number of zero inclusion test operations. To illustrate the effectiveness of the proposed algorithm for the generation of robust root locus, an example is provided.