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Semiconductors - We found bulk n-GaAs layers grown by liquid phase epitaxy to be irregularly stressed. Deformation created by this stress causes a small but detectable quadrupole splitting of... 相似文献
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V. G. Ibarra-Sierra J. C. Sandoval-Santana S. Azaizia H. Carrère L. A. Bakaleinikov V. K. Kalevich E. L. Ivchenko X. Marie T. Amand A. Balocchi A. Kunold 《Journal of Materials Science: Materials in Electronics》2018,29(18):15307-15314
The impact of Ga3+ centers in the spin-filtering effect observed in GaAsN samples is investigated through a model based on the master equation approach. Our results, compared with experimental data, show that, Ga3+ are essential to understanding the behavior of the photoluminescence intensity and degree of circular polarization as functions of a Faraday configuration magnetic field. The model presented here takes into account the interplay of Ga2+ and Ga3+ centers, Zeeman and hyperfine interaction. The various processes that drive the spin-filtering effect, as the spin selective capture of conduction band electrons into Ga centers are also considered here. 相似文献
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Rajagopal Shyamala Joshya Hélène Carrère Victor Guadalupe Ibarra-Sierra Juan Carlos Sandoval-Santana Vladimir K. Kalevich Eugeniyus L. Ivchenko Xavier Marie Thierry Amand Alejandro Kunold Andrea Balocchi 《Advanced functional materials》2021,31(27):2102003
The detection of light helicity is key for various applications, from drug production to optical communications. However, the light helicity direct measurement is inherently impossible with conventional photodetectors based on III–V or IV–VI non-chiral semiconductors. The prior polarization analysis by often moving optical elements is necessary before light is sent to the detector. A method is here presented to effectively give the conventional dilute nitride GaAs-based semiconductor epilayer a chiral photoconductivity. The detection scheme relies on the giant spin-dependent recombination of conduction electrons and the accompanying spin polarization of the engineered defects to control the conduction band. As the conduction electron spin polarization is, in turn, intimately linked to the excitation light polarization, the light polarization state and intensity can be determined by a simple conductivity measurement. This approach, removing the need for any optical elements in front of a non-chiral detector, could offer easier integration and miniaturization. This new chiral photodetector could potentially operate in a spectral range from the visible to the infra-red using (InGaAl)AsN alloys or ion-implanted nitrogen-free III–V compounds. 相似文献
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A. V. Subashiev Yu. A. Mamaev B. D. Oskotskii Yu. P. Yashin V. K. Kalevich 《Semiconductors》1999,33(11):1182-1187
The optical orientation of electron spins in heavily doped, strained GaAs/GaAsP layers with a deformation-split valence band
is studied experimentally. The observed polarized luminescence spectra and polarized photoemission (electron emission) spectra
are shown to be described well by a model which allows for smearing of the edges of the bands by the fluctuation potential
due to impurities, degeneracy of the carriers at low temperatures, and indirect electron-phonon optical transitions. The dominant
mechanism of electron spin relaxation in strained layers is found to be the Bir-Aronov-Pikus mechanism. The parameters of
the fluctuation potential and the parameters governing carrier spin relaxation are determined.
Fiz. Tekh. Poluprovodn. 33, 1307–1313 (November 1999) 相似文献
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Ivchenko E. L. Kalevich V. K. Kunold A. Balocchi A. Marie X. Amand T. 《Semiconductors》2019,53(9):1175-1181
Semiconductors - Experimental and theoretical studies on optical orientation and spin-dependent recombination in a semiconductor in a magnetic field under the normal incidence of circularly... 相似文献
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