1.3 μm InAsyP1-y-InPstrained-layer quantum-well laser diodes grown by metalorganic chemicalvapor deposition

The authors have fabricated 1.3-μm InAsP-InP separate-confinement-heterostructure (SCH) strained-layer double-quantum-well (SL-DQW) laser diodes (LDs) by metalorganic chemical vapor deposition (MOCVD). A low threshold current density of 410 A/cm ² was obtained. The CW threshold current was as low as 1.8 mA at 20°C, and maximum CW operating temperature of 120°C was obtained. These characteristics are almost the same as those of well-designed GaInAsP-InP SL-QW LDs. Further improvement of the characteristics of InAsP-InP LDs is expected by optimizing the device structure     

High-power CW-DFB laser diode modules for CATV applications operating at 1550 nm

Investigation of the correlation between longitudinal photon density distribution and spectral linewidth re-broadening, in conjunction with carefully designed coupling optics, enable laser modules that simultaneously achieve very high fibre-coupled power of 175 mW and very narrow linewidth<1 MHz even at /spl sim/120 mW of output power to be successfully fabricated.     

Two patients with polymyositis or dermatomyositis complicated with massive pleural effusion

Two patients with polymyositis (PM) or dermatomyositis (DM) complicated with massive pleural effusion are reported here. Both patients presented a high-grade fever, pleural effusion prominent on the right, and good response to steroid therapy. In a 50-year-old woman with PM, combined process of pleural inflammation, cardiomyopathy and coexisting hypothyroidism were considered to be responsible for the accumulation of the massive pleural effusion. However, in a 34-year-old man with DM, pleural inflammation associated with interstitial pneumonia or pleural microvasculopathy in DM was considered to be responsible for the accumulation of the massive pleural effusion.     

Very low threshold current density of 1.3-/spl mu/m-range GaInNAsSb-GaNAs3 and 5 QWs lasers

The dependence of the threshold current density on the number of wells for 1.3-/spl mu/m-range edge emitting lasers using GaInNAsSb novel material, at which the incorporation of the small amount of Sb make the two-dimensional growth condition wide, is studied. The lowest record ever reported for the threshold current density per well (Jth A/cm/sup 2//well@L=900 /spl mu/m) for 3 QWs lasers was achieved. GaInNAs-based 5 QWs lasers with the very low threshold current density per well of 160 A/cm/sup 2/ were successfully grown for the first time. Therefore, no significant deterioration of Jth is observed even though the number of wells increased up to 5. Since Jth of 5 QWs doesn't increased rapidly compared to SQW and 3 QWs as decreasing the cavity length, it is considered that lower Jth can be obtained by utilizing 5 QWs in devices such VCSELs which use short cavity length.     

Very high characteristic temperature and constant differentialquantum efficiency 1.3-μm GaInAsP-InP strained-layer quantum-welllasers by use of temperature dependent reflectivity (TDR) mirror

A very high characteristic temperature T₀ of 150 K (25-70°C) or 450 K (25-50°C) and an almost constant differential quantum efficiency operation in the temperature range of 25-70°C were achieved in 1.3-μm GaInAsP-InP strained-layer quantum-well (SL-QW) lasers by use of a novel temperature dependent reflectivity (TDR) mirror composed of multiple quarter-lambda thickness α-Si-SiOx dielectric films with quarter-lambda shift in the vicinity of center portion, The mechanism of high T₀ and constant differential quantum efficiency were explained using the structural parameters, transparent current density and gain coefficient of a SL-QW laser that are derived experimentally. The effect of TDR mirror was confirmed by measuring the temperature dependence of net gain of a SL-QW laser with TDR mirror. It was found that less temperature dependent net gain due to the decrease of mirror loss with temperature played an important role for improving the temperature characteristics of threshold current. Almost constant differential quantum efficiency over a wide temperature range is attributed to the increase of the facet reflectivity with temperature     

Wideband and high-power compressively strained GaInAsP/InPmultiple-quantum-well ridge waveguide lasers emitting at 1.3 μm

Compressively strained 1.3-μm GaInAsP/InP multiple-quantum-well (MQW) ridge waveguide lasers were fabricated. Through optimizing the total well thickness, large bandwidth over 11 GHz was achieved, together with high quantum efficiency of about 0.48 W/A and high power output of 60 mW before rollover. The laser also showed less temperature sensitivity up to an elevated temperature of 85°C     

Optical Burst Switching Router With 40-,10-Gb/s Bit-Rate Transparent Contention Resolution

We report a bit-rate transparent optical burst switching (OBS) router prototype using a fast 5 times 5 PLZT [(Pb,La)(Zr,Ti)O₃ ] optical matrix switch. Dynamic switching in a two-wavelength, 2 times 2 OBS switch is demonstrated. Contention resolution using a tunable Mach-Zehnder interferometer wavelength converter for both 40- and 10-Gb/s bursts is demonstrated for the first time. Error-free operation was achieved for both bit rates under the same settings, as required in autonomous networks     

High fibre coupled output power 37 nm tunable laser module using matrix DFB laser

The thermally-controlled laser module, integrating 12 distributed feedback (DFB) lasers in the form of a 2/spl times/6 matrix to realise both high output power and wide wavelength tunability, has been fabricated. The module has shown excellent characteristics, such as high fibre coupled power over 30 mW and tunability over 37 nm.     

Compressively strained 1.3 μm InAsP/InP and GaInAsP/InP multiplequantum well lasers for high-speed parallel data transmission systems

Turn-on delay times in the pulse response of compressively strained InAsP/InP double-quantum-well (DOW) lasers and GaInAsP/InP multiple-quantum-well (MQW) lasers emitting at 1.3 μm were investigated. DQW lasers with 200-μm cavity length and high-reflection coating achieved both a very low threshold current (1.8 mA) and a small turn-on delay time (200 ps), even under a biasless 30-mA pulse current. Compressively strained or lattice-matched GaInAsP MQW lasers and GaInAsP double-heterostructure (DH) lasers were also fabricated and compared. It was observed that the carrier lifetime was enhanced for InAsP DQW lasers and strained GaInAsP MQW lasers compared to the lattice-matched GaInAsP MQW lasers and conventional double-heterostructure lasers. To explain this increase in the carrier lifetime, the effect of the carrier transport on the carrier lifetime was studied. The additional power penalty due to the laser turn-on delay was simulated and is discussed     

Small turn-on delay time in 1.3 μm InAsP/InP strained doublequantum-well lasers with very-low threshold current

It is demonstrated for the first time that compressively strained InAsP/InP double quantum-well (DQW) lasers emitting at 1.3 μm performed a very small turn-on delay time by a significant reduction in threshold current. Lasers with 200 μm cavity length and high reflection coating achieved both very low threshold current of 1.8 mA and a small turn-on delay time (200 ps) even under a bias-less 30 mA pulse current. An additional power penalty was simulated, and it was shown that these small-delay and low-threshold performances are suitable for high-speed optical parallel data transmitters in computer networks