Effect of thermal annealing on optical and photoelectric properties of microcrystalline hydrogenated silicon films

The effect of thermal annealing in the temperature range T _a=300–600°C of films of microcrystal-line hydrogenated silicon (μc-Si:H) lightly doped with boron on the spectral dependences of the absorption coefficient (α) at photon energies hν=0.8–2.0 eV, dark conductivity (σ_d), and photoconductivity (Δσ_ph) was studied at room temperature. With increasing annealing temperature, a nonmonotonic variation of α (at hν<1.2 eV), σ_d, and Δσ_ph was observed. The data obtained are attributed to a change in the concentration of electrically active impurities and formation of defects, caused by hydrogen effusion and bond restructuring at high annealing temperatures.     

Photoinduced conductivity change in erbium-doped amorphous hydrogenated silicon films

Changes in the dark conductivity of erbium-doped amorphous hydrogenated silicon (a-Si:H(Er)) films after their preliminary illumination at room temperature have been studied. The effect of a compensating boron impurity on the photoinduced change in the conductivity of a-Si:H(Er) films is analyzed. It is established that the magnitude and the sign of the change in conductivity depend on the duration of illumination and position of the Fermi level in the mobility gap. Possible mechanisms leading to a photoinduced change in the conductivity of a-Si:H(Er) films are discussed.     

The influence of molecular structure modification on the photoluminescence and optical absorption of thin copper phthalocyanine films in the near-IR range

We have studied the luminescence and optical absorption of thin films of copper phthalocyanine (CuPc) with a modified molecular structure of the peripheral fragments. The coefficient of absorption in the near-IR and visible range (absorption by defects) and the photoluminescence spectra exhibit correlated changes depending on the modification of the CuPc structure.     

Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization

We have studied the Raman spectra of initially amorphous hydrogenated silicon (a-Si:H) films upon their exposure to femtosecond laser-radiation pulses with the fluence varied within 30–155 mJ/cm². The distribution of the volume fraction of a crystalline phase over the surface of processed films is determined for the first time and a correlation is established between changes in this value and the hydrogen content in a-Si:H films upon the crystallization induced by femtosecond laser radiation.     

Determining the macropore structure of capillary-porous materials by various methods

The macropore structure of quartz sand has been studied experimentally by various methods on the basis of various physical phenomena.Translated from Inzhernerno-Fizicheskii Zhurnal, Vol. 23, No. 1, pp. 145–150, July, 1972