1-GHz-spaced 16-channel arrayed-waveguide grating for a wavelength reference standard in DWDM network systems

We fabricated a 1-GHz-spaced 16-channel arrayed-waveguide grating (AWG) by using a new AWG configuration where the path of each arrayed waveguide winds backward and forward across a 4-in diameter wafer without crossing any other waveguides. The ultra-narrow (< 1 GHz) and stable transmission bands of this AWG can be used to construct a wavelength reference standard covering the S, C, and L bands in the dense wavelength-division-multiplexing network systems whose frequency deviation is /spl plusmn/160 MHz.     

370 W output power GaN-FET amplifier for W-CDMA cellular base stations

A single-ended amplifier using small packaged GaN-FETs exhibits a record 2.14 GHz W-CDMA output power. The amplifier, composed of paralleled 48 mm gate periphery FET die, delivers a peak saturated output power of 371 W with a linear gain of 11.2 dB at a drain voltage of 45 V under 2.14 GHz 3GPP W-CDMA signal input. The output power density (output power/package size) of 1.1 W/mm/sup 2/ is twice as high as that of the existing over 300 W GaAs-FET amplifiers. A low 5 MHz offset ACLR of -36 dBc with a drain efficiency of 24% is also obtained at 8 dB power back off from the saturated output power.     

Interfacial strength and chemistry of additive-free silicon nitride ceramics brazed with aluminium

Two kinds of additive-free silicon nitride ceramics were brazed with aluminium; one was with as-ground faying surfaces and the other was with faying surfaces heat-treated at 1073K for 1.8 ksec in air. The heat-treatment of the silicon nitride ceramics formed a silicon oxynitride layer on the faying surfaces and increased the brazing strength of the joints. A silica-alumina non-crystalline layer and a β′-sialon layer were formed successively from the aluminium side at the interface of the joints. The heat-treatment which made the former layer thicker is a necessary process in making reliable, strong brazed joints.     

Transmittance and cathodoluminescence of AlN ceramics sintered with Ca3Al2O6 as sintering additive

Aluminum nitride ceramics were prepared by sintering with 0–4.8 mass% of Ca₃Al₂O₆ (C₃A) as a sintering additive. The transmittance in the range of 260–550 nm increased with increasing amount of C₃A. The cathodoluminescence intensity attributed to oxygen-induced defects decreased with increasing amount of C₃A. From the results, the increase of the transmittance in the range of 260–550 nm was considered to be related to the decrease of the oxygen-induced defect density.