Effect of Electron Correlation on Phonon Spectra in Cuprates

We examine theoretically the phonon dynamics in the electron-phonon-coupled systems. The model Hamiltonian is a one-dimensional Hubbard model where the hopping of electrons induces the electron-phonon coupling. The numerically exact diagonalization of the Hamiltonian with truncation of the total number of phonons is performed. We calculate the phonon excitation spectra and find that the softening of phonons occurs in insulating case, and a diffusive character appears in the metallic case. We also calculate the charge and spin excitation spectra and find that the dynamics of the phonon coupled with the hopping of electrons is affected by the low energy charge and spin excitations.     

Microstructure and mechanical behaviour of 3Y-TZP/Mo nanocomposites possessing a novel interpenetrated intragranular microstructure

Yttria stabilized tetragonal zirconia polycrystal (Y-TZP)/0-100 vol % molybdenum (Mo) composites were fabricated by hot-pressing a mixture of Y-TZP powder containing 3 mol % yttria (Y₂O₃) and a fine Mo powder in vacuum. This composite system possessed a novel microstructural feature composed of an interpenetrated intragranular nanostructure, in which either nanometer sized Mo particles or equivalent sized zirconia (ZrO₂) particles located within the ZrO₂ grains or Mo grains, respectively. The strength and toughness were both greatly enhanced with increasing Mo content for the 3Y-TZP/Mo composites thus breaking through the strength-toughness tradeoff relation in transformation toughened ZrO₂ and its composite materials. They exhibited a maximum strength of 2100 MPa and a toughness of 11.4 MPa·m^1/2 for the composite containing 70 vol % Mo. These simultaneous improvements in strength and toughness were determined to be the result of a decrease in flaw size associated with the interpenetrated intragranular nanostructure, and a stress shielding effect created in the crack tip by the elongated Mo polycrystals bridging the crack tip in addition to the stress induced phase transformation.     

Markedly compressible behaviors of gellan hydrogels in a constrained geometry at ultraslow strain rates

The fracture behaviors of gellan hydrogels under compression remarkably depend on the strain rate as well as the boundary conditions for lateral expansion. In the geometry with no constraint for lateral expansion (conventional uniaxial compression), the gels rupture at relatively small strains independently of the compression rates. In contrast, when the gels are compressed extremely slowly (at a strain rate of ca. 10⁻⁵ s⁻¹) in the geometry prohibiting the lateral expansion at their top and bottom surfaces, they are remarkably compressible down to 2% of the initial height without macroscopic fracture and they are accompanied by a large amount of water release. In such markedly compressed gels, many microscopic cracks are formed around the central layer, where strain concentration occurs due to the nonuniform deformation arising from the constrained geometry. In the highly compressible case, the formation of macroscopic cracks is prevented by the localization of microscopic cracks as well as the enhancement in mechanical toughness by a significant increase in polymer concentration due to water release.     

Flashover voltage characteristics of contaminated station insulators under temporary ac overvoltages in the ac system connected with a frequency converter station

According to the recent analysis results of temporary ac overvoltage in the ac system connected with a frequency converter station, large-magnitude over-voltages were confirmed to occur under some special system conditions. Most of the station insulators currently used cannot withstand such overvoltages according to an evaluation based on the data obtained earlier. The necessity of tests to be done to evaluate such performance more accurately was recognized. Both power frequency and switching impulse overvoltage flashover tests were made on contaminated insulators by the method well simulating the natural wetting condition. Switching impulse flashover voltage with the waveshape having a long wavefront time of 2 ms can be well correlated with the flashover voltage characteristics of temporary ac overvoltage. Higher flashover voltage characteristics were obtained by a clean fog test method compared with those obtained by equivalent fog test method.     

Stabilization of bioethanol recovery with silicone rubber‐coated ethanol‐permselective silicalite membranes by controlling the pH of acidic feed solution

In order to produce highly concentrated bioethanol by pervaporation using an ethanol‐permselective silicalite membrane, techniques to suppress adsorption of succinic acid, which is a chief by‐product of ethanol fermentation and causes the deterioration in pervaporation performance, onto the silicalite crystals was investigated. The amount adsorbed increased as the pH of the aqueous succinic acid solution decreased. The pervaporation performance also decreased with decreasing pH when the ternary mixtures of ethanol/water/succinic acid were separated. Using silicalite membranes individually coated with two types of silicone rubber, pervaporation performance was significantly improved in the pH range of 5 to 7, when compared with that of non‐coated silicalite membranes in ternary mixtures of ethanol/water/succinic acid. Moreover, when using a silicalite membrane double‐coated with the two types of silicone rubber, pervaporation performance was stabilized at lower pH values. In the separation of bioethanol by pervaporation using the double‐coated silicalite membrane, removal of accumulated substances having an ultraviolet absorption maximum at approximately 260 nm from the fermentation broth proved to be vital for efficient pervaporation. Copyright © 2005 Society of Chemical Industry     

IBM's Linux watch, the challenge of miniaturization

Nearly four years in development, the IBM Linux watch contains a complete computer system that runs Linux, displays X11 graphics, and has wireless connectivity. The system fits in a case that could pass as a slightly unusual analog timepiece with a somewhat odd shape and an extraordinarily brilliant face. The developers have created two versions of the watch, one with an organic light-emitting diode display and the other with a liquid crystal display. Still considered a research prototype, the watch already runs some personal information management applications, and it can communicate with PCs, PDAs, and other wireless-enabled devices, viewing condensed e-mail and directly receiving pager-like messages. Eventually, users will be able to access various Internet-based services, such as up-to-the-minute information about weather, traffic conditions, the stock market, and sports     

Far infrared reflection spectra in narrow-gap semiconductors

Far infrared reflection spectra of Cd_XHg_1?X Se are measured in the region 20 to 600 cm^?1 at temperatures between 5 and 77 K. Reflection spectra are explained well by the dynamic dielectric function which is constructed as a sum of Γ₈?Γ₈ interband, intraband and phonon contributions. The plasmon-LO phonon coupling effect is also discussed.     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

A 6-ns ECL 100 K I/O and 8-ns 3.3-V TTL I/O 4-Mb BiCMOS SRAM

The authors report a 4 M word×1 b/1 M word×4 b BiCMOS SRAM that can be metal mask programmed as either a 6-ns access time for an ECL 100 K I/O interface to an 8-ns access time for a 3.3-V TTL I/O interface. Die size is 18.87 mm×8.77 mm. Memory cell size is 5.8 μm×3.2 μm. In order to achieve such high-speed address access times the following technologies were developed: (1) a BiCMOS level converter that directly connects the ECL signal level to the CMOS level; (2) a high-speed BiCMOS circuit with low threshold voltage nMOSFETs; (3) a design method for determining the optimum number of decoder gate stages and the optimum size of gate transistors; (4) high-speed bipolar sensing circuits used at 3.3-V supply voltage; and (5) 0.55-μm BiCMOS process technology with a triple-well structure