STM tunneling spectroscopy on high Tc superconductors

STM tunneling spectroscopy has been performed on the bulk single crystals of BiSrCaCuO (BSCCO) and the epitaxial thin films of YBaCuO (YBCO) at cryogenic temperatures. The STM images and tunneling spectra observed on the (001) surfaces can be classified into three cases; 1) Atomic image is visible. However, the tunneling spectrum shows semiconducting or smeared superconducting gap structures, depending on the tip-sample distance. 2) Clear atomic image can not be obtained. But, the tunneling spectrum shows flat bottom region with quite low zero bias conductance. 3) Tunneling spectra demonstrate gapless behavior, independent of the tip-sample separation. These observations support the quasi-2D electronic picture in whichs-wave like 2D superconducting layers are coupled with each other through the Josephson effect.     

Decomposition of chlorofluorocarbons on TiO2ZrO2

The decomposition of chlorofluorocarbons (CFCs) in the presence of water was examined over a variety of solid acid catalysts. The TiO₂ZrO₂ catalyst was found to have the highest activity and longest life among the catalysts examined. The activity of the TiO₂ZrO₂ catalysts depended upon the content of TiO₂. At the contents of TiO₂ from 58 to 90 mole%, the TiO₂ZrO₂ catalysts exhibited high activity, and these catalysts were proven to contain TiZrO₄ crystal. From the study of the XRD peak intensity of the TiZrO₄ crystal, it was highest on the TZ-58 which contained 58 mole% of TiO₂, and decreased with increasing the content of TiO₂. Furthermore, the conversion of CFC113 measured at 673 K was highest at TZ-58, and decreased gradually with increasing TiO₂ content. Therefore, the TiZrO₄ crystal influences the activity of decomposition of CFC113. However, the TiO₂ZrO₂ catalyst was gradually deactivated during the reaction due to the elimination of titanium atoms. A good relationship was found between the activity on TiO₂ZrO₂ catalyst and bond energy of CCl in the compounds of chlorofluorocarbons and hydrochlorocarbons, suggesting that the rate controlling step was the cleavage of CCl bond.     

Second harmonic generation in self-assembled ZnO microcrystallite thin films

The second-order non-linear susceptibility components were measured using 1.064 μm incident light for ZnO thin films of various thicknesses from 24.4 to 283 nm self-assembled on sapphire substrates by laser molecular beam epitaxy. It was found that the values of the non-linear susceptibility for the films are almost the same as those of bulk material, except the samples with thicknesses ranging from 35 to 64.8 nm, which show a large enhancement effect. For the sample with a thickness of 44.4 nm, the second-order non-linear susceptibility components were found to be approximately 14.7 pm/v for d₃₁, 15.2 pm/v for d₁₅, and −83.7 pm/v, a value approximately 14 times that of the bulk material, for d₃₃. The second-order non-linear coefficient enhancement in the thin films may be resulted from the microcrystallite structures.     

Combinatorial pulsed laser deposition and thermoelectricity of (La1−xCax)VO3 composition-spread films

La_1−xCa_xVO₃ composition-spread film library was fabricated by combinatorial pulsed laser deposition and their thermoelectric properties were evaluated paralelly by the multi-channel probes of Seebeck coefficient and electric conductivity. Concurrent X-ray analysis verified the formation of solid soluted films in the full composition range (0x1) as judged from the linear variation of the lattice constants. The Seebeck coefficients of La_1−xCa_xVO₃ changed from a large negative value to almost zero with the increase of x, due presumably to the variation of valence in vanadium ions.The power factor in this library was as high as 0.6 μW/cm K², which was obtained at x=0, i.e. pure LaVO₃ grown at 800 °C.     

Pulsed Laser Processing of Carbon and Silicon Clusters and Thin Films

Abstract

Several new processes have been developed for the preparation of fullerenes and thin films by using a pulsed excimer laser. The irradiation of a pulsed KrF excimer laser beam onto a C₆₀ powder target produced single phase C₆₀ thin films when the laser energy fluence was in the range between 40 and 50mJ/cm². By atomic force microscopy, the laser-deposited C₆₀ thin film was verified to have a surface far smoother that the surfaces of films produced by the conventional evaporation method. The stainless steel rods coated with this film exhibited an excellent tribological property. Cluster formation from SiC and other carbides MC_n(M=Ti,W,B) was investigated by laser desorption time-of-flight mass spectrometry. No clear indication was observed for the production of such clusters as (SiC)₆₀ and (M_xC_60-x) from the sintered targets directly as well as from the films laser deposited from the targets. However, C₆₀ and C₇₀ were found to exists in the laser-deposited films, indicating a new applicability of pulsed laser processing for segregative cluster synthesis from solid solution. Preliminiary results on thin film deposition via pulsed ablation of (Ba,Na)_xSi₄₆ clathrate were also presented.     

Perfect Bi4Ti3O12 Single‐Crystal Films via Flux‐Mediated Epitaxy

Excellent crystallinity of material films and atomic control of their surface/interface, sufficient for the realization of their optimal physical properties, are technological premises for modern functional‐device applications. Bi₄Ti₃O₁₂ and related compounds attract much interest as highly insulating, ferroelectric materials for use in ferroelectric random‐access memories. However, it has been difficult thus far for Bi₄Ti₃O₁₂ films to satisfy such requirements when formed using vapor‐phase epitaxy, owing to the high volatility of Bi in a vacuum. Here, we demonstrate that flux‐mediated epitaxy is one of the most promising and widely applicable concepts to overcome this inevitable problem. The key point of this process is the appropriate selection of a multi‐component flux system. A combinatorial approach has led to the successful discovery of the novel flux composition of Bi–Cu–O for Bi₄Ti₃O₁₂ single‐crystal film growth. The perfect single‐crystal nature of the stoichiometric Bi₄Ti₃O₁₂ film formed has been verified through its giant grain size and electric properties, equivalent to those of bulk single crystals. This demonstration has broad implications, opening up the possibility of preparing stoichiometric single‐crystal oxide films via vapor‐phase epitaxy, even if volatile constituents are required.     

Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO.

Since the successful demonstration of a blue light-emitting diode (LED), potential materials for making short-wavelength LEDs and diode lasers have been attracting increasing interest as the demands for display, illumination and information storage grow. Zinc oxide has substantial advantages including large exciton binding energy, as demonstrated by efficient excitonic lasing on optical excitation. Several groups have postulated the use of p-type ZnO doped with nitrogen, arsenic or phosphorus, and even p-n junctions. However, the choice of dopant and growth technique remains controversial and the reliability of p-type ZnO is still under debate. If ZnO is ever to produce long-lasting and robust devices, the quality of epitaxial layers has to be improved as has been the protocol in other compound semiconductors. Here we report high-quality undoped films with electron mobility exceeding that in the bulk. We have used a new technique to fabricate p-type ZnO reproducibly. Violet electroluminescence from homostructural p-i-n junctions is demonstrated at room-temperature.     

Cryogenic STM/STS observation on oxide superconductors

The topographic and electronic properties of the surfaces of (001) and (110) oriented YBa₂Cu₃O_y, epitaxial films have been probed by atomic resolution STM/STS at 4.2 K. The STM image on the (001) surface clearly revealed the atomic corrugation of the tetragonal lattice with an average spacing of 0.4 nm. while on the (110) surface the orthorhombic atomic lattice, corresponding to the Cu atoms of both CuO₂ and CuO chain planes, was observed. The STS result on the (001) surface indicated the semiconducting nature of the terminating layer. As the tunneling tip came closer to the surface, however, the shape of the tunneling spectrum became more metallic and showed a superconducting energy gap, which seems to arise from the underlying superconducting layer. On the other hand, the tunneling spectra on the (110) surface indicated superconducting gap structures, independent of the tip-sample distance.     

A New Catalyst for Selective Oxidation of CO in H2: Part 1, Activation by Depositing a Large Amount of FeO x on Pt/Al2O3 and Pt/CeO2 Catalysts

1% Pt/Al₂O₃ and 1% Pt/CeO₂ are markedly activated by the deposition of a large quantity of FeO _x , about 100 wt% in Fe with respect to the supports. In contrast, the activity of a Ru/Al₂O₃ catalyst was completely suppressed by the deposition of FeO _x , but a Ru-Pt/Al₂O₃ was markedly activated by the FeO _x . The activation depends on the sequence of the deposition, that is, no pronounced activation was observed on the Pt supported on a FeO _x /Al₂O₃ as well as on the Pt codeposited with a small amount of Fe on Al₂O₃, that is, the activity was almost equal to that of the Pt/Al₂O₃. The XPS analysis of the Pt/CeO₂ and FeO _x /Pt/CeO₂ proved that the Pt is effectively covered with the FeO _x . Selectivity for the oxidation of CO in H₂ was also improved on the FeO _x /Pt/Al₂O₃ and FeO _x /Pt/CeO₂ catalysts and it is rather independent of the conversion. In conformity with the feature of the FeO _x /Pt/Al₂O₃ and FeO _x /Pt/CeO₂ catalysts, we deduced that the deposited FeO _x is activated by the Pt and the FeO _x is responsible for the selective oxidation of CO.