Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers

The results of development of the basic structure and technological conditions of growing heterostructures for single- and dual-frequency quantum-cascade lasers are reported. The heterostructure for a dual-frequency quantum-cascade laser includes cascades emitting at wavelengths of 9.6 and 7.6 μm. On the basis of the suggested heterostructure, it is possible to develop a quantum-cascade laser operating at a difference frequency of 8 THz. The heterostructures for the quantum-cascade laser are grown using molecularbeam epitaxy. The methods of X-ray diffraction and emission electron microscopy are used to study the structural properties of the fabricated heterostructures. Good agreement between the specified and realized thicknesses of the epitaxial layers and a high uniformity of the chemical composition and thicknesses of the epitaxial layers over the area of the heterostructure is demonstrated. A stripe-structured quantum-cascade laser is fabricated; its generation at a wavelength of 9.6 μm is demonstrated.     

Spontaneous Emission and Lasing of a Two-Wavelength Quantum-Cascade Laser

Semiconductors - The results of experiments on the fabrication (by molecular-beam epitaxy) and investigation of the heterostructures of a two-frequency quantum-cascade laser produced on the basis...     

Spectral Shift of Quantum-Cascade Laser Emission under the Action of Control Voltage

Technical Physics Letters - Spectral redistribution of the intensity of short- and long-wavelength emission components within gain bandwidth of a 7- to 8-μm quantum-cascade laser under the...     

Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range

Technical Physics Letters - We present the results of an experimental study of two-section semiconductor lasers with active region consisting of three 3.1 nm InGaAs/InGaAlAs quantum wells. Passive...     

On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm

The results of experimental studies of the gain properties of “thin” (3.2 nm thick) elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm are presented. The results of studying the threshold and gain characteristics of stripe laser diodes with active regions based on “thin” quantum wells with a lattice–substrate mismatch of +1.0% show that the quantum wells under study exhibit a high modal gain of 11 cm^–1 and a low transparency current density of 46 A/cm² per quantum well.     

Quantum-Cascade Ring Resonator Laser with 7–8 μm Wavelength and Surface Radiation Output

Semiconductors - We have created a quantum-cascade laser with 7–8 μm wavelength and surface radiation output through a lattice formed by focused ion beam etching of the upper cladding of...     

Surface Emitting Quantum-Cascade Ring Laser

Semiconductors - Quantum-cascade lasers with surface emission of radiation by means of a grating formed in the upper waveguide cladding layers by ion-beam milling are fabricated and studied. The...     

Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers

Semiconductors - The results of studying the dynamic characteristics of 1.55-μm single-mode vertical-cavity surface-emitting lasers (VCSELs) formed by the fusion of wafers of high-quality...     

Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength

Semiconductors - Room-temperature lasing at a wavelength of 8 μm in multistage quantum-cascade lasers pumped by current pulses is demonstrated. A quantum-cascade laser heterostructure based on...