High-efficiency GaInP-AlGaInP ridge waveguide single-mode lasersoperating at 650 nm

In this letter, the authors report a very high quantum efficiency of 91% for antireflection/high-reflection-coated GaInP-AlGaInP ridge waveguide laser diodes operating at 650 nm range. The laser structure was grown by solid-source molecular beam epitaxy. The laser diodes performed stable single-mode operation up to 60 mW. Threshold current as low as 50 mA was measured for 5.5×600 μm² laser diodes. To the authors' best knowledge, this is among the best ever reported efficiency for visible lasers     

Monolithic super-bright red resonant cavity light-emitting diodegrown by solid source molecular beam epitaxy

Monolithic super-bright resonant-cavity light-emitting diode operating at λ=663 nm has been developed. The diode consisted of a 1λ-thick AlGaInP active region sandwiched between AlAs-AlGaAs distributed Bragg reflectors. The device structure was grown by solid source molecular beam epitaxy. The current aperture of the emitter was created by lateral selective wet thermal oxidation. A record-high peak wall-plug efficiency of 2.2% and a continuous-wave output power of 1.4 mW were attained without heatsinking at room temperature from a diode having a diameter of 80 μm. The emission linewidth was as narrow as 4.5 nm