1.3 ?m InP/InGaAsP channelled-substrate buried-heterostructure laser monolithically integrated with a photodetector

A 1.3 ?m InP/InGaAsP channelled-substrate buried-heterostructure laser is monolithically integrated with a monitoring photodetector. The lasers have threshold currents in the range of 25?30 mA and the photodetector provides ~ 15 ?A of photocurrent per milliwatt of laser power.     

400 Mbit/s, 372 km coherent transmission experiment using in-lineoptical amplifiers

Reports on an optical transmission experiment using four in-line optical amplifiers. With a net gain of 58000 (47.7 dB) from the amplifiers, the authors were able to increase the longest nonregenerated transmission distance to 372 km. The system penalty associated with the amplifiers was only 1.5 dB     

Strip buried heterostructure lasers with passive distributed Bragg reflectors

A GaAs-AlxGa1-xAs strip buried heterostructure laser with distributed feedback Bragg reflectors is described. In this structure, the active strip is present in the form of an isolated segment completely buried in wide band gap AlxGa1-xAs. The diode is shown to operate stably in single transverse (fundamental) and longitudinal modes when the Fabry-Perot modes are suppressed by saw cutting the mirrors.     

Wavelength-division-multiplexed optical transmission system with single-mode fibre and a dual-wavelength hybrid laser light source

Wavelength-division-multiplexed optical fibre transmission over a 45km single-mode fibre using a hybrid dual-wavelength InP CSBH laser light source emitting at 1.3 ?m and 1.5 ?m has been demonstrated. This simple and economic system provides two distinct optical data channels without requiring electronic or optical multiplexing. Optical crosstalk was unobservable while operating the separate optical channels at 1.5 Gbit/s and 90 Mbit/s, respectively. The use of a single light source eliminates multiple fibre-to-source alignments, reducing transmitter packaging costs.     

Fabrication and performance of an InP/InGaAsP monolithic 12 × 12-element matrixed LED array

The fabrication of a large-area InP/InGaAsP double-heterostructure LED monolithic matrixed array of 144 light-emitting elements is presented. Each LED produces ?2.5 mW at an operating current of 150mA with per-element bandwidths of ?200 Mbit/s. The array, which we believe to be the largest integrated optoelectronic circuit fabricated in this material system, is thus capable of very high power output and bandwidth. Such arrays are expected to be useful in many optical data link applications.     

1.5 μm InP/GaInAsP linear laser array with twelve individuallyaddressable elements

Linear arrays of twelve individually addressable InP/GaInAsP channelled-substrate buried-heterostructure lasers emitting at λ=1.5 μm were fabricated. Spacing between active elements (250 μm) was made to match the fibre spacing in a 12-fibre ribbon. Individual arrays were epoxy bonded, p-side up to metallised BeO carriers. Best case uniformity of laser characteristics within an array is indicated by tight distributions of lasing threshold (9.8±0.9 mA at 30°C) and output powers of (8.6±0.4 mW at 100 mA). While no significant optical crosstalk could be detected, small increases (≃10%) in device lasing thresholds were observed when two adjacent elements were operated CW simultaneously, probably due to the thermal impedance of the epoxy-bond employed and the resultant heating of operating nearest-neighbour devices. Such arrays offer the potential for reduced fibre alignment time per element thus reducing packaging costs per source. In addition, reduced space requirement per source is realised     

Growth and characterization of high yield, reliable, high-power,high-speed, InP/InGaAsP capped mesa buried heterostructure distributedfeedback (CMBH-DFB) lasers

The capped-mesa buried-heterostructure distributed-feedback (CMBH-DFB) laser structure requires three epitaxial growths and is designed to allow good control of the width of the active layer using straightforward chemical etching techniques. The base structure, which contains the active layer, was fabricated using a variety of epitaxial techniques: liquid-phase epitaxy, hydride vapor-phase epitaxy (VPE) and metalorganic vapor-phase epitaxy (MOVPE). The final cap growth was done using hydride VPE. High yields of low-threshold high-power DFB lasers were produced from a number of wafers at emission wavelengths of 1.3 and 1.55 μm