Investigation of electrical properties of MOS structures with silicon nitride films doped with rare earth elements

One of the main problems of MOS devices in electronics is improving the stability of their characteristics. This problem is considered in this work. This solution is ensured by a decrease in the density of the surface states due to the use of silicon nitride films doped with rare earth elements as a tunneling and barrier layer and due to use of SiGe and Ge solid solutions as a storage medium of nanoclusters. CV-studies of the electrophysical parameters of MOS structures of Me-Si₃N₄ (rare earth elements)-Ge(SiGe)-Si₃N₄ (rare earth elements)-nSi nanoclusters, where rare earth elements with a different atomic radius are used as alloying components, are performed. The regularity of the influence of the atomic radius of rare earth elements on the electrical characteristics of MOS structures is revealed.     

Discrete topology and contour definition

For all kinds of stationary plane grids only the 6-neighborhood is consistent. It admits the definition of a digital curve, in particular a contour, as a set of pixel pairs. Thus curves become objects of zero thickness and may be coded with one bit per grid step.     

Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission

Semiconductors - The results of experiments aimed at the observation of split 1s states in Mg-doped Si are reported. From the results, it is possible to determine the chemical shift and exchange...     

Relaxation of the Excited States of Arsenic in Strained Germanium

Semiconductors - The relaxation times of the lower p states of the arsenic donor in a germanium crystal strained along the [111] crystallographic direction are studied. Measurements are performed...     

Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:Bi

Semiconductors - The results of experimental and theoretical investigations of terahertz-emission-spectrum tuning by means of uniaxial stress of a silicon crystal doped with shallow bismuth donors...     

The development of modern metrology and its role today

Modern metrology is the result of more than 200 years of development that began with the creation of the decimal metric system at the time of the French Revolution and the beginning, at about the same time, of mass production using interchangeable parts. This article traces these developments and describes how world metrology is organized today and gives examples of applications of metrology showing how it concerns us all in many aspects of our daily life.     

Processing Effects on Properties of (Fe,Mg,Al)3O4 Spinels as Potential Consumable Anodes for Pyroelectrolysis

A promising concept of consumable anode materials for high‐temperature pyroelectrolysis process, which is expected to overcome the environmental and economical impacts of classical extractive metallurgy, relies on substituted magnetite‐based ferrospinels, presenting high electrical conductivity, appropriate refractoriness, and redox stability. The present work aims assessment of the processing effects on structural, redox, and electrical properties of Fe_2.3Al_0.2Mg_0.5O₄ spinel, prepared by conventional solid‐state route (SSR) and laser floating zone (LFZ) method. The observed trends for high‐temperature electrical conductivity behavior indicated that the electronic transport is only slightly affected by the preparation method, suggesting the minor effects from the grain boundaries. For scaled‐up ferrospinel‐based consumable anodes the impact of oxidation during thermal cycling on electrical properties and electrode integrity can be minimized even in air, by using relatively fast cooling/heating rates.     

Synergistic effects of zirconium- and aluminum co-doping on the thermoelectric performance of zinc oxide

This work aims to explore zirconium as a possible dopant to promote thermoelectric performance in bulk ZnO-based materials, both within the single-doping concept and on simultaneous co-doping with aluminum. At 1100–1223 K mixed-doped samples demonstrated around ～2.3 times increase in ZT as compared to single-doped materials, reaching ～0.12. The simultaneous presence of aluminum and zirconium imposes a synergistic effect on electrical properties provided by their mutual effects on the solubility in ZnO crystal lattice, while also allowing a moderate decrease of the thermal conductivity due to phonon scattering effects. At 1173 K the power factor of mixed-doped Zn_0.994Al_0.003Zr_0.003O was 2.2–2.5 times higher than for single-doped materials. Stability tests of the prepared materials under prospective operation conditions indicated that the gradual increase in both resistivity and Seebeck coefficient in mixed-doped compositions with time may partially compensate each other to maintain a relatively high power factor.     

Experimental Investigation of Convective Heat Transfer Between Silicon-Melt and Solidification Front

Convective heat transfer between silicon melt and solidification front during Bridgman-type solidification process in a ceramic crucible has been investigated by means of heat balance analysis of the crucible during the process. The effect of aspect ratio on the Rayleigh and Nusselt numbers has been investigated. For a large crucible size (with inner diameter of about 0.50-m), the dependence correlates well with the empiric formula Nu?=?0.303 Ra^0.279. For a small crucible size (with inner diameter of about 0.20-m), the dependence correlates well with the empiric formula Nu?=?0.181 Ra^0.285. The experimental data obtained were compared with the available literature experimental and numerical simulation data.