Enabling local actions by global consensus

Presented is an algorithm for determining whether total global consensus exists for a process to execute a local action that has interaction constraints. The algorithm assumes a virtual ring of processes each of which possesses a token. Multiple processes can simultaneously attempt and succeed in performing actions that do not constrain each other, thus exploiting the available parallelism. The algorithm can be tailored to handle any situation in which the action of one process is constrained by actions of other processes and where total global consensus is required. The use of execution time estimates and information concerning the attempts and activities of other processes reduces the number of failed attempts and hence unnecessary communication.     

An analysis of three-dimensional elasto-plastic sinusoidal contact

Researchers have developed many models to simulate the elasto-plastic contact of spheres. However, there does not appear to exist a closed-form analytical model for elasto-plastic three-dimensional sinusoidal contact. This work uses a finite element model (FEM) to characterize elasto-plastic sinusoidal contact. Although at initial contact the sphere and sinusoidal case are very similar and can both be described by the classic elastic Hertz contact case, once the contact is pressed past a certain range of deformation the two cases are very different. The model produces equations which can be used to approximately relate the area of contact to the contact pressure for elasto-plastic sinusoidal contact. The equations are fit to the FEM results and existing elastic solutions of sinusoidal contact. An empirical expression for the average pressure which causes complete contact between elasto-plastic sinusoidal contacts is also provided.     

Context dependent table matrix L systems

Table matrix L systems with context dependent rules generating rectangular arrays are introduced. It is seen that this generates some interesting classes of pictures. The typical hierarchy result is proved in this case. Closure operations on this model and its one dimensional restriction are considered.     

A novel fast medical image segmentation scheme for anatomical scans

Multimedia Tools and Applications - Medical image is the visual representation of anatomy or physiology of internal structures of the body and it is useful for clinical analysis and medical...     

Helly hypergraph based matching framework using deterministic sampling techniques for spatially improved point feature based image matching

Multimedia Tools and Applications - Hypergraphs are tools for matching of point-features incorporating spatial relationships in the form of hyperedges exhibiting topological and geometric features...     

Half-terahertz operation of SiGe HBTs

This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (f/sub T/) of 510 GHz at 4.5 K was measured for a 0.12/spl times/1.0 /spl mu/m/sup 2/ SiGe HBT (352 GHz at 300 K) at a breakdown voltage BV/sub CEO/ of 1.36 V (1.47 V at 300 K), yielding an f/sub T//spl times/BV/sub CEO/ product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).     

Fast parallel algorithms for the Maximum Empty Rectangle problem

We present efficient parallel algorithms for the maximum empty rectangle problem in this paper. On crew pram, we solve the area version of this problem inO(log ² n) time usingO(nlogn) processors. The perimeter version of this problem is solved inO(logn) time usingO(nlog ² n) processors. On erew pram, we solve both the problems inO(logn) time usingO(n ²/logn) processors. We also present anO(logn) time algorithm on a mesh-of-trees architecture.     

An investigation of low-frequency noise in complementary SiGe HBTs

We present a comprehensive investigation of low-frequency noise behavior in complementary (n-p-n + p-n-p) SiGe heterojunction bipolar transistors (HBTs). The low-frequency noise of p-n-p devices is higher than that of n-p-n devices. Noise data from different geometry devices show that n-p-n transistors have an increased size dependence when compared with p-n-p transistors. The 1/f noise of p-n-p SiGe HBTs was found to have an exponential dependence on the (intentionally introduced) interfacial oxide (IFO) thickness at the polysilicon-to-monosilicon interface. Temperature measurements as well as ionizing radiation were used to probe the physics of 1/f noise in n-p-n and p-n-p SiGe HBTs. A weak temperature dependence (nearly a 1/T dependence) of 1/f noise is found in both n-p-n and p-n-p devices with cooling. In most cases, the magnitude of 1/f noise is proportional to I/sub B//sup 2/. The only exception in our study is for noise in the post-radiation n-p-n transistor biased at a low base current, which exhibits a near-linear dependence on I/sub B/. In addition, in proton radiation experiments, the 1/f noise of p-n-p devices was found to have higher radiation tolerance than that of n-p-n devices. A two-step tunneling model and a carrier random-walk model are both used to explain the observed behavior. The first model suggests that 1/f noise may be caused by a trapping-detrapping process occurring at traps located inside IFO, while the second one indicates that noise may be originating from the emitting-recapturing process occurring in states located at the monosilicon-IFO interface.