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排序方式: 共有436条查询结果,搜索用时 15 毫秒
1.
Yu. A. Brodskii V. I. Bazikov I. V. Zubkov A. I. Krylov V. D. Stepanenko 《Chemical and Petroleum Engineering》2006,42(9-10):552-559
Modern designs are examined, and technical data presented for vibratory electric and convection driers, driers with infra-red sources, and steam driers. 相似文献
2.
A. D. Bulanov P. G. Sennikov V. A. Krylov T. G. Sorochkina L. A. Chuprov O. Yu. Chernova O. Yu. Troshin 《Inorganic Materials》2007,43(4):364-368
Using gas chromatography and high-resolution Fourier-transform IR spectroscopy, we have determined the concentrations of C1–C4 hydrocarbon impurities in isotopically unmodified silicon tetrafluoride before and after fine purification and in 28Si-enriched SiF4. The concentrations of C1–C4 hydrocarbon impurities in silicon tetrafluoride for SiH4 synthesis have been shown to correlate with those in the synthesized silane. 相似文献
3.
L. V. Krylov Yu. N. Melent'ev V. I. Yatsenko V. V. Nikitin L. V. Maksimova I. N. Knyazeva 《Metallurgist》1991,35(2):32-32
Magnitogorsk Metallurgical Combine. Translated from Metallurg, No. 2, p. 37, February, 1991. 相似文献
4.
A. I. Ponomarev V. I. Tsidilkovski K. R. Krylov T. B. Charikova A. A. Lakhtin L. I. Leonyuk 《Journal of Superconductivity and Novel Magnetism》1996,9(1):27-32
The anisotropy of the resistivity and thermoelectric power (TEP)S of Nd1.85Ce0.15CuO4?δ single crystal (T c =17 K) has been investigated. In the temperature rangeT c <T<300 K the ratioρ c/ρab≈104 and the dependencesρ ab (T) andρ c (T) change from quadratic to linear atT~200 K. The dependencesS ab (T) andS c (T) reach a maximum atT>T c and then decrease almost linearly with increasing temperature, changing sign from positive to negative nearT~ 150 K. The features of the resistivity and TEP temperature dependences (the lawρ∝T 2 changing toρ∝T, the change in the sign of S with temperature, and the low TEP anisotropy at largeρ anisotropy) have been interpreted in the framework of the narrow-band model. 相似文献
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E. V. Grabovski M. K. Krylov V. V. Kuznetsov A. P. Lototsky E. V. Khaustov Yu. A. Khalimullin N. Yu. Kas'yanov A. I. Kormilitsyn V. A. Filatov E. Ya. Shkol'nikov 《Instruments and Experimental Techniques》2002,45(1):67-70
An inductive power-amplifier stage based on a two-coil assembly and two electrically exploded conductors used as circuit breakers is described. Owing to the magnetic flux conservation, the interruption of the current in the first of the storage coils causes an increase of the current in the second coil, which results in a rapid thermal burst of the second electrically exploded conductor. As a result, the load-current rise-time is 20 times less than the charging-current rise time and the amplitude of the current increases. 相似文献
8.
Contactless methods were used to study the characteristics of the front and rear sides of single-crystal GaAs wafers whose rear side was irradiated with low-energy Ar ions. Variations in the optical and photoelectric properties of irradiated and unirradiated sides were detected. A solitonic mechanism for the penetration of defects into the crystal bulk is suggested. 相似文献
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The event-related potentials (ERP) to lateralized moving visual stimuli (administered to the right and to the left of the subject) were recorded in six derivations in eight healthy subjects during passive viewing and selective attention to one of the stimuli (the relevant one), which demanded precise and rapid motor reaction. It was shown that during the selective voluntary attention correlation between successive ERP was substantially higher than that under conditions of passive (involuntary) attention, i.e. the ERP in the occipital, parietal, and frontal derivations during voluntary attention were more stable. The less was correlation between the ERP at passive viewing, the greater was the difference between the values of correlation coefficients during selective and passive attention. It is suggested that role of selected attention consists in stabilization of activity of the cortical structures, which are involved in solving the behavioral task. 相似文献