Stream-Based Data Sampling Mechanism for Process Object

Process object is the instance of process. Vertexes and edges are in the graph of process object. There are different types of the object itself and the associations between object. For the large-scale data, there are many changes reflected. Recently, how to find appropriate real-time data for process object becomes a hot research topic. Data sampling is a kind of finding c hanges o f p rocess o bjects. There i s r equirements f or s ampling to be adaptive to underlying distribution of data stream. In this paper, we have proposed a adaptive data sampling mechanism to find a ppropriate d ata t o m odeling. F irst o f all, we use concept drift to make the partition of the life cycle of process object. Then, entity community detection is proposed to find changes. Finally, we propose stream-based real-time optimization of data sampling. Contributions of this paper are concept drift, community detection, and stream-based real-time computing. Experiments show the effectiveness and feasibility of our proposed adaptive data sampling mechanism for process object.     

Revisiting the Parallel Strategy for DOACROSS Loops

Journal of Computer Science and Technology - DOACROSS loops are significant parts in many important scientific and engineering applications, which are generally exploited pipeline/wave-front...     

Low-temperature synthesis of SiC nanowires with Ni catalyst

SiC nano wires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 ℃ by gas pressure annealing processing. The morphologies and crystal structures were determined by scanning electron microscopy(SEM), transmission electron microscopy(TEM)and X-ray diffraction(XRD). The results show that the assynthesized nanowires are β-SiC single crystalline with diameter range of 50-100 nm, and length of tens of micron by directly annealing at 900 ℃. The SiC nano wires grow along the [111] direction with highly uniform morphology. And the possible growth mechanism of SiC nano wires is proposed.The present work provides an efficient strategy for the production of high-quality SiC nano wires.