Calculation of the flow capacity of a gas channel in the sources of beams of fast neutral particles by means of the Monte-Carlo method

This paper describes the model based on the Monte-Carlo method and presents the results of the mathematical simulation of the flow capacity of the exit aperture for an ion source with a ribbon-shaped beam and for the same source equipped with the system for ion beam neutralization and the electrostatic deflection system. For the designs mentioned above distributions of the normalized pressure and the collision thickness of gas along the channel axis are given. The results obtained are indicative of the fairly strong effect of these design elements on the flow capacity and, consequently, on the operating conditions of the ion source. The results of simulation can be used for correcting the value of the gas flow rate in the source for the purpose of maintaining invariant conditions of discharge glow, as well as for evaluating the effectiveness of the process of ion charge exchange in the source channel.     

Mathematical simulation of the influence of a focusing channel surface on the angle characteristics of a bundle of rapid neutral particles

The model of the channel of the neutralization of the plasma source of bundles of rapid neutral particles (RNPs), which was developed earlier, is expanded for the case of rough surfaces forming the neutralization channel. With the help of mathematical modeling, the dependences of the main characteristics, as well as the spatial distribution of the RNP bundle from values of the roughness parameter, are obtained. It was found that the maximum values of the RNP bundle in the focusing plane when K > 30 practically stops depending on the values of roughness. These results may be used for the determination of the requirements for the purity of the processing surfaces of a source of RNP flows.     

Mathematical simulation of an inclined neutralization channel for a plasma source of neutral beams

An earlier developed model for a neutralization channel of a plasma source of neutral beams is applied to the case of an inclined neutralization channel. The energy and angular characteristics of the output beam are presented together with the neutralization factor as a function of the length and inclination angle of the channel. Strong angular separation of ions and fast neutral particles is observed in the sources of this design. Under a restricted range of angles of the output beam, this effect allows one to efficiently remove a considerable part of the ions from the output beam, thus increasing the neutralization factor.     

Remote Determination of Current Amplitude and Phase Using a Reed Switch

Russian Electrical Engineering - A method to determine the current amplitude and phase in the buses of high-voltage electric equipment has been suggested. The method is based on determination of...     

Characterizing a sustained short-circuit current with the use of reed relays

We propose to characterize the short-circuit current in high-voltage electrical installations by measuring the closing time of contacts of closing and switching reed relays, their closed-state time, or the time elapsed between the closing (opening) of contacts of a reed-relay pair. Techniques for determining the amplitude of this current and the errors are outlined. It is shown that the laboratory dependences of the current amplitude in the solenoid coil on the indicated time may be used to determine the I _m.a value. The experimental results are presented.     

Creation and Development of the Ion Beam Technology

Russian Microelectronics - A historical overview of the development of domestic ion beam technology is presented. It is shown that the wide application of the ion beam technology is facilitated by...     

Investigation into the selectivity of etching various materials by fast neutral particle beams

The results of an investigation into the etching rate and selectivity of silicon substrates, as well as SiO₂, W, TiN, TiC, and NbN films, with the use of chemically active compounds CF₄, C₃F₆, and SF₆ as working gases, which were obtained using a Neutral-110L source of extended fast neutral particle (FNP) beams developed at the Institute of Physics and Technology of the Russian Academy of Sciences (FTIAN), are presented. The possibility of attaining etching selectivity by FNP beams of the mentioned materials relative to SiO₂ in a range of 10–16 is shown. The data are compared with the currently published results of investigations into this region.     

Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics

A brief review of the results of the application of fast neutral particle (FNP) beam sources in the field of the production technology of micro- and nanoelectronic devices published in the literature is presented. Processes such as surface cleaning; sputtering and etching of insulators, simiconductors, and metals; layer-by-layer etching; deposition of thin films directly from beams or by sputtering, and neutral-beam-enhanced deposition; oxidation, nitridation, and fluorination of a near-surface layer; production of the elements of micro- and nanoelectromechanical devices; nanostructuring; and modification of self-assembled organic molecular structures are considered. In addition, the results of investigating a decrease in the degree of degradation of the electrophysical properties of materials and electrical characteristics of device structures when passing from ion-beam technologies to FNP beams are discussed.     

A system for precision reactive ion-beam etching of nanostructures for field-emission devices

An system for precision selective ion-beam etching of nanostructures for field-emission devices is developed. The system is equipped with a Radikal-M160 multibeam ion source with a cold cathode and closed electron drift forming the ion beam of the working substance with a diameter of 160 mm and a microwave input for the supply of the microwave bias to the treated substrates. Technological possibilities of the system are investigated experimentally. The advantages of simultaneous ion-beam and microwave etching of the nanostructures are shown. The processes of precision etching of nanostructures through a mask up to 1 μm thick with diameters of orifices of 20–30 nm (aspect ratio of the structures of the mask ∼50: 1) are carried out.     

Specific features of the development of differential-phase transformer protection systems on the basis of magnetic reed switches

It shown that the magnetic reed switches installed close to flexible current leads of power transformers with power over 6.3 (40) MV A and high voltage 10 (35) kV may be used as a basis of phase-comparison circuits with specified boundary angles in the devices for the protection of these transformers against short circuit. The response threshold of these circuits, the errors caused by the differences between the intrinsic response times, inaccuracies in settings of magnetic reed switches, and regulation of the transformer voltage are estimated. A technique for suppressing the effects of adjacent phases and electric installations is presented.