Flip-chip planar GaInAs/InP p-i-n photodiodes analysis of frequencyresponse

High-speed response, high-manufacturing-yield photodiodes will be needed for optical interconnection in computer and for broadband networks. Frequency responses of a new planar GaInAs/lnP p-i-n photodiode for flip-chip bonding are analyzed. To study changes caused by the new structure, responses are related to device parameters including photoabsorption layer thickness, p-i-n junction diameter, and the size of the forward biased p-i-n junction. Forward biasing is a peculiarity of our photodiodes. A photodiode with an optimized design showed good characteristics     

AlGaAs/GaAs lateral current injection multiquantum well (LCI-MQW)laser using impurity-induced disordering

A lateral current injection (LCI) multiquantum-well (MQW) laser having planar structure is proposed and its advantages compared with conventional vertical structure lasers. A LCI-MQW laser has been fabricated by using Si- and Zn-induced disordering of an MQW active layer. It is shown that a threshold current of 27 mA is achieved under pulsed current driven at room temperature and a very low stray capacitance of 0.27 pF is obtained at zero bias voltage     

Synthesis and Self-Organization of Fluorene-Conjugated Bisimidazolylporphyrin and Its Optical Properties

A conjugated-bisimidazolylporphyrin bridged by bis(ethynylfluorene) was synthesized and organized into linear polymer through self-coordination having mean molecular weights, M_w and M_n, of ~2.1 × 10⁵ Da and ~1.6 × 10⁵ Da, respectively. A large two-photon absorption cross section value of 3.4 × 10⁵ GM (per dimer unit) was observed. This value was comparable to that of the previously reported self-assembled linear polymer consisting of butadiyne-bridged imidazolylporphyrins. The two-photon absorption properties could be controlled by tuning the wavelength and absorption intensity of the one-photon absorption.     

Integrated waveguide-photodiodes with large bandwidth and highexternal quantum efficiency

An integrated waveguide-photodiode with an external quantum efficiency as high as 56% (coupled to single-mode fiber) and large bandwidth (5.5-11.2 GHz) at 1.55-μm wavelength is described. This performance was achieved utilizing a vertical impedance matching design for improved guide-detector coupling     

Monolithic four-channel photodiode/amplifier receiver array integrated on a GaAs substrate

A four-channel optoelectronic integrated receiver array operating at the wavelength near 850 nm has been fabricated on a single GaAs substrate by using metal-semiconductor-metal (MSM) photodiodes (PD's) and metal-semiconductor field-effect transistors (MESFET's). The largest integration scale for a monolithic receiver and uniform characteristics among circuit channels have been achieved due to the structural simplicity and the process-compatibility of this array. Also, an extremely small capacitance of MSM-PD, 0.10 pF, has lead us to obtain a high-speed operation up to a bit rate of 1.5 Gbit/s, NRZ, and a low noise characteristic exhibiting an equivalent input noise current as small as 5 pA/Hz^1/2. These results have indicated the suitability of MSM-PD/MESFET's circuits for large-scale multichannel optoelectronic integration of receivers.     

Monolithic PIN/preamplifier circuit integrated on a GaAs substrate

An AlGaAs/GaAs PIN photodiode and a GaAs transimpedance amplifier including six FETs have been monolithically integrated on a GaAs substrate. A photoreceiver operation exhibiting an excellent linearity has been demonstrated. The photodiode sensitivity of 0.44 A/W and the amplifier transimpedance of 1.0 × l04 V/A have been determined from the measurement.     

Low-loss optical directional coupler on InP

The authors demonstrate a low-loss 3 dB directional coupler for use in balanced coherent receivers for lightwave communications. The device exhibits 1.6-1.7 dB insertion loss and better than 52:48 splitting ratio at 1.54 mu m wavelength.<>     

Compact transmitter and receiver modules with optoelectronic-integrated circuits for optical LAN's

Compact transmitter and receiver modules with monolithic optoelectronic-integrated circuits, i.e., OEIC's, are demonstrated, and 400- and 800-Mbit/s transmission experiments are successfully carried out over up to 4 and 2 km, respectively, with these modules, for the first time. The design of the monolithic-integrated circuits and the compact module structure are presented. The soldering technique based on the use of YAG laser simplifies the packaging procedures, and an efficient and simple scheme for coupling between OEIC's and fibers make the OEIC modules compact. Both modules are attractive for applications in high data-rate communication systems, particularly in local area networks, CATV systems, and intra-office links.     

Optoelectronic integrated four-channel transmitter arrayincorporating AlGaAs/GaAs quantum-well lasers

A four-channel optoelectronic integrated transmitter array which is fabricated on a single GaAs substrate and operates at 834 nm is described. Each of the circuits incorporates a laser, a photodiode for laser power monitoring, and a laser driver circuit consisting of three GaAs field-effect transistors and a resistor. Laser threshold current of 15-21 mA, transmitter conversion efficiency of approximately 6 mW/V and high-speed operation at a bit rate of more than 1.5-Gb/s NRZ with allowable crosstalk have been demonstrated. A preliminary aging test of the lasers indicated that their stability is comparable to that of discrete devices. The results have demonstrated the feasibility of applying the transmitter array to optical components that process multichannel optical signals at high speed     

High-speed monolithic coherent optical receiver integrated on InP substrate

A monolithic coherent receiver have a directional waveguide coupler and a balanced pair of lateral pin photodiodes was fabricated. The lateral pin photodiode has an improved structure, exhibiting a 3 dB bandwidth of 2 GHz. Heterodyne detection with this monolithic receiver was demonstrated at 1.8 GHz and 2.3 GHz.<>