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Orsal B. Alabedra R. Valenza M. Lecoy G.P. Meslage J. Boisrobert C.Y. 《Electron Devices, IEEE Transactions on》1988,35(1):101-107
The authors describe the electrical and optical characterization of three Hg1-xCdxTe avalanche photodiodes manufactured using planar technology with composition parameter x near 0.6. This alloy composition leads to devices that are well suited for 1.55-μm detection. From the noise analysis under multiplication, the authors show the tight dependence of the ratio β/α (of the hole; and electron ionization coefficient, respectively) upon x and the ratio Δ/E g where Δ is the spin-orbit splitting energy and E g is the bandgap energy. It turns out that in these alloys around x =0.6, Δ is very close to the bandgap energy so β/α reaches its maximum value. Owing to this property, which is characteristic of II-VI compounds, Hg1-xCdxTe is a good candidate for 1.3-μm to 1.6-μm avalanche photodiodes 相似文献
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This paper deal with the studies and manufacture of HgCdTe detectors for fibre optics telecommunications, operating at 1,3 μm and 1,55 μm either with the Pin structure or with the avalanche mode. Electronic properties of the HgCdTe alloy with the appropriate composition range value, crystal growth methods, means of characterization of the materiel and process technology are described. Performances of the different types of diodes are reported, together with reliability tests, applications and prospects. 相似文献
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