Hg0.4Cd0.6Te 1.55-μm avalanche photodiodenoise analysis in the vicinity of resonant impact ionization connectedwith the spin-orbit split-off band

The authors describe the electrical and optical characterization of three Hg_1-xCd_xTe avalanche photodiodes manufactured using planar technology with composition parameter x near 0.6. This alloy composition leads to devices that are well suited for 1.55-μm detection. From the noise analysis under multiplication, the authors show the tight dependence of the ratio β/α (of the hole; and electron ionization coefficient, respectively) upon x and the ratio Δ/E_g where Δ is the spin-orbit splitting energy and E _g is the bandgap energy. It turns out that in these alloys around x=0.6, Δ is very close to the bandgap energy so β/α reaches its maximum value. Owing to this property, which is characteristic of II-VI compounds, Hg_1-xCd_xTe is a good candidate for 1.3-μm to 1.6-μm avalanche photodiodes     

Photodétecteurs à avalanche Hg0,3 Cd0,7Te à λ = 1,3 μm: coefficients d’ionisation et bruit

Annals of Telecommunications - On présente les premiers résultats obtenus sur les photodiodes à avalanche Hg0,3Cd0,7Te pour la photodétection à λ = 1,3 μm. A la...     

Détecteurs HgCdTe pour télécommunication par fibres optiques

This paper deal with the studies and manufacture of HgCdTe detectors for fibre optics telecommunications, operating at 1,3 μm and 1,55 μm either with the Pin structure or with the avalanche mode. Electronic properties of the HgCdTe alloy with the appropriate composition range value, crystal growth methods, means of characterization of the materiel and process technology are described. Performances of the different types of diodes are reported, together with reliability tests, applications and prospects.