Understanding silica-supported metal catalysts: Pd/silica as a case study

Supported metal catalysts, particularly noble metals supported on SiO₂, have attracted considerable attention due to the importance of the silica–metal interface in heterogeneous catalysis and in electronic device fabrication. Several important issues, e.g., the stability of the metal–oxide interface at working temperatures and pressures, are not well-understood. In this review, the present status of our understanding of the metal–silica interface is reviewed. Recent results of model studies in our laboratories on Pd/SiO₂/Mo(1 1 2) using LEED, AES and STM are reported. In this work, epitaxial, ultrathin, well-ordered SiO₂ films were grown on a Mo(1 1 2) substrate to circumvent complications that frequently arise from the silica–silicon interface present in silica thin films grown on silicon.     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

氧化铝陶瓷缺口件循环疲劳及断裂机理

用实验方法研究了Ａｌ＿２Ｏ＿３陶瓷缺口试件在循环载荷作用下的疲劳寿命。结果表明，缺口导致的应力集中效应显著降低了循环疲劳寿命；若用缺口根部最大应力为应力水平，则不同缺口半径陶瓷试件具有相同疲劳断裂规律，说明陶瓷材料的疲劳集中系数和理论应力集中系数相同。本文还分析讨论了陶瓷材料的循环疲劳寿命表达式和循环疲劳断裂机理。     

A 0.9 V 92 dB Double-Sampled Switched-RC Delta-Sigma Audio ADC

A 0.9 V third-order double-sampled delta-sigma audio ADC is presented. A new method using a combination of a switched-RC technique and a floating switched-capacitor double-sampling configuration enabled low-voltage operation without clock boosting or bootstrapping. A three-level quantizer with simple dynamic element matching was used to improve linearity. The prototype IC implemented in a 0.13 CMOS process achieves 92 dB DR, 91 dB SNR and 89 dB SNDR in a 24 kHz audio signal bandwidth, while consuming 1.5 mW from a 0.9 V supply. The prototype operates from 0.65 V to 1.5 V supply with minimal performance degradation.     

Influence of ethyl methacrylate content on the volume‐phase transition of temperature‐sensitive poly[(N‐isopropylacrylamide)‐co‐(ethyl methacrylate)] microgels

A novel series of temperature‐sensitive poly[(N‐isopropylacrylamide)‐co‐(ethyl methacrylate)] (p(NIPAM‐co‐EMA)) microgels was prepared by the surfactant‐free radical polymerization of N‐isopropylacrylamide (NIPAM) with ethyl methacrylate (EMA). The shape, size dispersity and volume‐phase transition behavior of the microgels were investigated by transmission electron microscopy (TEM), ultraviolet–visible (UV–Vis) spectroscopy, dynamic light scattering (DLS) and differential scanning calorimetry (DSC). The transmission electron micrographs and DLS results showed that microgels with narrow distributions were prepared. It was shown from UV–Vis, DLS and DSC measurements that the volume‐phase transition temperature (VPTT) of the p(NIPAM‐co‐EMA) microgels decreased with increasing incorporation of EMA, but the temperature‐sensitivity was impaired when more EMA was incorporated, causing the volume‐phase transition of the microgels to become more continuous. It is noteworthy that incorporation of moderate amounts of EMA could not only lower the VPTT but also enhance the temperature‐sensitivity of the microgels. The reason for this phenomenon could be attributed to changes in the complicated interactions between the various molecules. Copyright © 2004 Society of Chemical Industry     

Effects of compressive and tensile stress on the growth mode of epitaxial oxide films

Oxide films were deposited on different substrates by laser molecular beam epitaxy. Reflection high-energy electron diffraction was performed to in situ investigate the change of growth mode and the lattice relaxation during the growth. An asymmetrical phenomenon was found in the two kinds of strain states, compressive stress and tensile stress of heterostructures with different lattice mismatch. In the case of BaTiO₃/SrTiO₃ (2.2%), 2D layer-by-layer growth mode without lattice relaxation can be maintained for a longer period for BTO films on STO with compressive stress, comparing to STO films on BTO with tensile stress. When MgO films were deposited on SrTiO₃ with a large mismatch of 7.8%, compressive stress leads to rapid lattice relaxation with a very thin wet layer, and 3D strained island were observed. As a comparison, SrTiO₃ films on MgO with tensile stress were configured. No RHEED patterns can be observed duo to a large tensile stress.     

氩等离子体辐照反相乳液接枝改性涤纶织物的研究

首次提出了在等离子体辐照后再用反相乳液接枝改性涤纶织物的新方法,探讨了接枝颗粒特征以及织物各项物理力学性能.接枝织物的结构及性能的测试结果表明:接枝物的尺寸远小于纤维的直径,在提高织物吸湿性的同时,对织物透气性能和强力等无明显影响;实验也证实了乳液中未接枝单体可以再次聚合.     

两种塑料纸芯管结构与性能比较分析

测试与分析了两种塑料管材的拉伸与弯曲性能、热变形温度、结晶性和化学组成,分析结果表明:管材B较管材A具有更高模量与热变形温度,但管材B较高的分子量与较小的分子量分布抑制管材产品内在的均匀性,且管材B中的α晶在高温下向β晶的转变可能会影响管材长期使用性能.     

Onset of buoyancy-driven convection in melting from below

When a horizontal homogeneous solid is melted from below, convection can be induced in a thermally unstable melt layer. In this study the onset of buoyancy-driven convection during time-dependent melting is investigated by using similarly transformed disturbance equations. The critical Rayleigh numbers based on the melt-layer thickness are found numerically for various conditions. For small superheats, the present predictions approach the well known results of classical Rayleigh-Bénard problems, that is, critical Rayleigh numbers are located between 1,296 and 1,708, regardless of the Prandtl number. However, for high superheats the critical Rayleigh number increases with an increase in phase change rate but with decrease in Prandtl number.