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1.
Latchup-free ESD protection design with complementary substrate-triggered SCR devices 总被引:2,自引:0,他引:2
Ming-Dou Ker Kuo-Chun Hsu 《Solid-State Circuits, IEEE Journal of》2003,38(8):1380-1392
The turn-on mechanism of silicon-controlled rectifier (SCR) devices is essentially a current triggering event. While a current is applied to the base or substrate of an SCR device, it can be quickly triggered on into its latching state. In this paper, latchup-free electrostatic discharge (ESD) protection circuits, which are combined with the substrate-triggered technique and an SCR device, are proposed. A complementary circuit style with the substrate-triggered SCR device is designed to discharge both the pad-to-V/sub SS/ and pad-to-V/sub DD/ ESD stresses. The novel complementary substrate-triggered SCR devices have the advantages of controllable switching voltage, adjustable holding voltage, faster turn-on speed, and compatible to general CMOS process without extra process modification such as the silicide-blocking mask and ESD implantation. The total holding voltage of the substrate-triggered SCR device can be linearly increased by adding the stacked diode string to avoid the transient-induced latchup issue in the ESD protection circuits. The on-chip ESD protection circuits designed with the proposed complementary substrate-triggered SCR devices and stacked diode string for the input/output pad and power pad have been successfully verified in a 0.25-/spl mu/m salicided CMOS process with the human body model (machine model) ESD level of /spl sim/7.25 kV (500 V) in a small layout area. 相似文献
2.
Ming-Dou Ker Chyh-Yih Chang Yi-Shu Chang 《Components and Packaging Technologies, IEEE Transactions on》2004,27(3):445-451
This paper reports a real case of electrostatic discharge (ESD) improvement on a complementary metal oxide semiconductor integrated circuit (IC) product with multiple separated power pins. After ESD stresses, the internal damage have been found to locate at the interface circuit connecting between different circuit blocks with different power supplies. Some ESD designs have been implemented to rescue this IC product to meet the required ESD specification. By adding only an extra ESD clamp N-channel metal oxide semiconductor with a channel width of 10 /spl mu/m between the interface node and the ground line, the human-body-model (HBM) ESD level of this IC product can be improved from the original 0.5 to 3 kV. By connecting the separated vertical sync signal (VSS) power lines through the ESD conduction circuit to a common VSS ESD bus realized by the seal ring, the HBM ESD level of the enhanced version IC product with 12 separated power supplies pairs can be significantly improved from original 1 kV up to > 5 kV, without the noise coupling issue. 相似文献
3.
Tzu‐Ming Wang Yu‐Hsuan Li Ming‐Dou Ker 《Journal of the Society for Information Display》2009,17(10):785-794
Abstract— Low‐temperature polysilicon (LTPS) technology has a tendency towards integrating all circuits on glass substrate. However, the poly‐Si TFTs suffered poor uniformity with large variations in the device characteristics due to a narrow laser process window for producing large‐grained poly‐Si TFTs. The device variation is a serious problem for circuit realization on the LCD panel, so how to design reliable on‐panel circuits is a challenge for system‐on‐panel (SOP) applications. In this work, a 6‐bit R‐string digital‐to‐analog converter (DAC) with gamma correction on glass substrate for TFT‐panel applications is proposed. The proposed circuit, which is composed of a folded R‐string circuit, a segmented digital decoder, and reordering of the decoding circuit, has been designed and fabricated in a 3‐μm LTPS technology. The area of the new proposed DAC circuit is effectively reduced to about one‐sixth compared to that of the conventional circuit for the same LTPS process. 相似文献
4.
Szu‐Han Chen Ming‐Dou Ker Tzu‐Ming Wang 《Journal of the Society for Information Display》2011,19(8):539-546
Abstract— A digital time‐modulation pixel memory circuit on glass substrate has been designed and verified for a 3‐μm low‐temperature polysilicon (LTPS) technology. From the experimental results, the proposed circuit can generate 4‐bit digital codes and the corresponding inversion data with a time‐modulation technique. While the liquid‐crystal‐display (LCD) panel operates in the still mode, which means the same image is displayed on the panel, a data driver for an LCD panel is not required to provide the image data of the frame by the proposed pixel memory circuit. This pixel memory circuit can store the frame data and generate its corresponding inversion data to refresh a static image without activating the data driver circuit. Therefore, the power consumption of a data driver can be reduced in the LCD panel. 相似文献
5.
6.
Chia‐Chi Tsai Tzu‐Ming Wang Ming‐Dou Ker 《Journal of the Society for Information Display》2010,18(11):904-912
Abstract— An on‐panel delta—sigma analog‐to‐digital converter (ADC) has been implemented and verified for 3‐μm low‐temperature polysilicon (LTPS) technology with two basic blocks: a delta—sigma modulator and a decimation filter. From the experimental results, the digital output from the delta—sigma modulator is correctly matched with the analog input voltage ratio such that the digital output can be converted into 8‐bit digital code successfully under a supply voltage of 10 V from the decimation filter. The implemented on‐panel delta—sigma ADC can be used for the application of temperature‐to‐digital converter on glass substrate. 相似文献
7.
In this paper, the robust delay‐dependent H∞ control for a class of uncertain systems with time‐varying delay is considered. An improved state feedback H∞ control is proposed to minimize the H∞‐norm bound via the LMI optimization approach. Based on the proposed result, delay‐dependent criteria are obtained without using the model transformation technique or bounded inequalities on cross product terms. The linear matrix inequality (LMI) optimization approach is used to design the robust H∞ state feedback control. Some numerical examples are given to illustrate the effectiveness of the approach. 相似文献
8.
New layout design to effectively reduce the layout area of CMOS output transistors but with higher driving capability and better ESD reliability is proposed. The output transistors of large device dimensions are assembled by a plurality of the basic layout cells, which have the square, hexagonal or octagonal shapes. The output transistors realized by these new layout styles have more symmetrical device structures, which can be more uniformly triggered during the ESD-stress events. With theoretical calculation and experimental verification, both higher output driving/sinking current and stronger ESD robustness of CMOS output buffers can be practically achieved by the proposed new layout styles within a smaller layout area in the non-silicided bulk CMOS process. The output transistors assembled by a plurality of the proposed layout cells also have a lower gate resistance and a smaller drain capacitance than that realized by the traditional finger-type layout. 相似文献
9.
10.
Davydenko SG Juselius JK Munder T Bogengruber E Jäntti J Keränen S 《Yeast (Chichester, England)》2004,21(6):463-471
We describe here a screening procedure devised for searching new genes involved in protein secretion in Saccharomyces cerevisiae. The screening procedure takes advantage of yeast strains constructed within the EUROFAN project, in which the promoters of the novel essential genes were replaced by the doxycycline-regulated tetO(7)-CYC1 promoter. This promoter is active in normal growth medium but results in downregulation of the gene in the presence of doxycycline. The yeast cells were grown in the presence or absence of doxycycline, and both the growth and secretion of the heat shock protein, Hsp150p, into the culture medium were determined. In seven strains there was a specific effect on protein secretion. In a strain in which the RPN5 gene was downregulated, the level of secreted Hsp150p was increased compared to the control culture. When RER2 was downregulated, cells secreted Hsp150p that was not of the mature size. In five strains, secretion was more severely reduced than cell growth. One of these downregulated genes, YGL098w, was recently reported to encode an ER-located t-SNARE, USE1. Four of the genes detected, NOG2, NOP15, RRP40 and SDA1, encode proteins involved in ribosome assembly, suggesting a possible new signalling pathway between ribosome biogenesis and production of secreted proteins. The results obtained here indicate that the present screen could be successfully used in larger scale to identify novel secretion-related genes. 相似文献