2.6 μm GaSB based photonic crystal coupled cavity lasers

Long wavelength GaInAsSb/AlGaAsSb quantum wells lasers have been grown by molecular beam epitaxy and processed into ridge cavities coupled by an intracavity photonic crystal mirror, to enhance the laser spectral properties. The devices operate in the continuous-wave regime at room temperature with a single frequency emission at 2.6 m.     

Free engineering of buried oxide patterns in GaAs/AlAs epitaxial structures

The formation of a buried aluminium oxide from the surface of a GaAs/AlAs epitaxial structure is presented and validated through the localised electroluminescence in a light emitting diode device. This oxidation method relies on photolithography, plasma treatment and wet thermal oxidation. This enables localised buried oxide areas to be formed by a vertical oxidation process applied from the surface. Because of this new technology, the shape of the oxidised areas can be freely designed, unlike when using the standard lateral oxidation technology.