Itanium 2 processor 6M: higher frequency and larger L3 cache

The third-generation Itanium processor targets the high-performance server and workstation market. To do so, the design team sought to provide higher performance through increased frequency and a larger L3 cache. At the same time, we had to limit the power dissipation to fit into the existing platform envelope. These considerations led to what we now call the Itanium 2 processor 6M: the latest generation of Itanium 2, which features a 6-Mbyte, 24-way set-associative on-die L3 cache. The design implements a 2-bundle 64-bit explicitly parallel instruction computing (EPIC) architecture and is fully compatible with previous implementations. Although this processors frequency is 50 percent higher than that of the previous generation, the maximum power dissipation holds flat at 130 W to ensure the platform's backward compatibility.     

A 65-nm Dual-Core Multithreaded Xeon® Processor With 16-MB L3 Cache

This paper describes a dual-core 64-b Xeon MP processor implemented in a 65-nm eight-metal process. The 435-mm² die has 1.328-B transistors. Each core has two threads and a unified 1-MB L2 cache. The 16-MB shared, 16-way set-associative L3 cache implements both sleep and shut-off leakage reduction modes. Long channel transistors are used to reduce subthreshold leakage in cores and uncore (all portions of the die that are outside the cores) control logic. Multiple voltage and clock domains are employed to reduce power     

A 1.5-GHz 130-nm Itanium/sup /spl reg// 2 Processor with 6-MB on-die L3 cache

This 130-nm Itanium 2 processor implements the explicitly parallel instruction computing (EPIC) architecture and features an on-die 6-MB 24-way set-associative level-3 cache. The 374-mm/sup 2/ die contains 410 M transistors and is implemented in a dual-V/sub t/ process with six Cu interconnect layers and FSG dielectric. The processor runs at 1.5 GHz at 1.3 V and dissipates a maximum of 130 W. This paper reviews circuit design and package details, power delivery, the reliability, availability, and serviceability (RAS) features, design for test (DFT), and design for manufacturability (DFM) features, as well as an overview of the design and verification methodology. The fuse-based clock deskew circuit achieves 24-ps skew across the entire die, while the scan-based skew control further reduces it to 7 ps. The 128-bit front-side bus has a bandwidth of 6.4 GB/s and supports up to four processors on a single bus.     

A 400-MT/s 6.4-GB/s multiprocessor bus interface

This paper describes the design of a system bus interface for the 130-nm Itanium/sup /spl reg//2 processor that operates at 400MT/s (1 megatransfer = 1 Mb/s/pin) with a peak bandwidth of 6.4 GB/s. The high-speed operation is achieved by employing source-synchronous transfer with differential strobes. Short flight time is accomplished by double-sided placement of the processors. Preboost and postboost edge-rate control enables fast clock-to-output timing with tight edge-rate range. The built-in input/output (I/O) loopback test feature enables I/O parameters to be tested on die, using a delay-locked loop and interpolator with 21-ps phase-skew error and 15-ps rms jitter. Power modeling methodology facilitates accurate prediction of system performance.     

A 45 nm 8-Core Enterprise Xeon¯ Processor

This paper describes a 2.3 Billion transistors, 8-core, 16-thread, 64-bit Xeon^? EX processor with a 24 MB shared L3 cache implemented in a 45 nm nine-metal process. Multiple clock and voltage domains are used to reduce power consumption. Long channel devices and cache sleep mode are used to minimize leakage. Core and cache recovery improve manufacturing yields and enable multiple product flavors from the same silicon die. The disabled blocks are both clock and power gated to minimize their power consumption. Idle power is reduced by shutting off the unterminated I/O links and shedding phases in the voltage regulator to improve the power conversion efficiency.