Coats for repair and restoration of stems of oil and gas pipeline valves

Several coats, such as gray cast iron, cast iron alloyed with nickel and copper, nickel-aluminum, Nichrome (nickel-chromium alloy), bronze, etc., have been investigated. Corrosion resistance of coats in a medium based on drilling mud and sodium chloride and sulfate solutions has been checked. Alloyed cast iron admixed with tin-based compounds showed the best results. __________ Translated from Khimicheskoe i Neftegazovoe Mashinostroenie, No. 3, pp. 43–44, March, 2006.     

Effect of methyltrimethoxysilane hydrolysis and condensation conditions on the properties of thin polymethylsilsesquioxane films

We have studied the influence of methyltrimethoxysilane hydrolysis and condensation conditions in aprotic solvents on the formation, composition, and properties of thin polymethylsilsesquioxane films. The condensation of silanol groups and the structuring of the silicon–oxygen skeleton at different heat-treatment temperatures have been investigated by IR spectroscopy. The dielectric permittivity k and refractive index n of the films have been determined as functions of annealing temperature t_a: at t_a = 430°C, k = 2.75 and n = 1.38.     

Structures with vertically stacked Ge/Si quantum dots for logical operations

Ge/Si structures with vertically stacked quantum dots are simulated to implement the basic elements of a quantum computer for operation with electron spin states. Elastic-strain fields are simulated using the conjugate gradient method and an atomistic model based on the Keating potential. Calculations are performed in the cluster approximation using clusters containing about three million atoms belonging to 150 coordination spheres. The spatial distributions of the strain energy density and electron potential energy are calculated for different valleys forming the bottom of the silicon conduction band. It is shown that the development of multilayer structures with vertically stacked quantum dots makes it possible to fabricate deep potential wells for electrons with vertical tunnel coupling.     

Application of detonation coatings to design a new metal cutting tool

This paper presents the results of a research and development study of a new metal-working tool using detonation spray hard alloy coating. The influence of a heat-insulating sublayer on thermal flows occurring at flow drilling has been studied. New design and technology to manufacture punches for plastic drilling with heat-insulating ceramic sublayer aimed at decreasing a parasitic thermal flow through the tool to the lathe’s spindle have been developed. In addition, a new design and manufacturing technology for replaceable cutting plates for lathe working involving the use of detonation spray hard alloy coating have been created. The proposed application of the new tool allows reduction of its conversion cost and improving of performance characteristics.     

Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation

Semiconductors - The growth of Ge nanoclusters on a prepatterned Si (100) surface formed by imprint lithography in combination with subsequent irradiation with Ge+ ions is studied. The prepatterned...     

Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature

The problem of how the probability of trapping of charge carriers into quantum dots via the wetting layer influences the steady-state and time-dependent luminescence of the wetting layer and quantum dots excited via the matrix is analyzed in the context of some simple models. It is shown that the increase in the integrated steady-state luminescence intensity of quantum dots with increasing area fraction occupied by the quantum dots in the structure is indicative of the suppression of trapping of charge carriers from the wetting layer into the quantum dots. The same conclusion follows from the independent decays of the time-dependent luminescence signals from the wetting layer and quantum dots. The processes of trapping of charge carriers into the InAs quantum dots in the AlAs matrix at 5 K are studied experimentally by exploring the steady-state and time-dependent photoluminescence. A series of structures with different densities of quantum dots has been grown by molecular-beam epitaxy on a semi-insulating GaAs (001) substrate. It is found that the integrated photoluminescence intensity of quantum dots almost linearly increases with increasing area occupied with the quantum dots in the structure. It is also found that, after pulsed excitation, the photoluminescence intensity of the wetting layer decays more slowly than the photoluminescence intensity of the quantum dots. According to the analysis, these experimental observations suggest that trapping of excitons from the wetting layer into the InAs/AlAs quantum dots at 5 K is suppressed.     

Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

Semiconductors - The luminescence properties of arrays of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups, including those embedded in two-dimensional photonic...     

Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

Semiconductors - The  possibility  of forming a strained pseudomorphous quantum well (QW) consisting of a InxGa1 – xAsyP1 – y quaternary alloy upon the deposition of...     

Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates

Semiconductors - Space-arranged arrays of pits on Si(001) substrates were prepared using electron-beam lithography and plasma chemical etching. The positions of pits were arrange to the square and...