Rate control at the MAC-layer is one of the fundamental building blocks in many wireless networks. Over the past two decades, around thirty mechanisms have been proposed in the literature. Among them, there are mechanisms that make rate selection decisions based on sophisticated measurements of wireless link quality, and others that are based on straight-forward heuristics. Minstrel, for example, is an elegant mechanism that has been adopted by hundreds of millions of computers, yet, not much was known about its performance until recently. The purpose of this paper is to provide a comprehensive survey and analysis of the existing solutions from the two fundamental aspects of rate control—metrics and algorithms. We also review how these solutions were evaluated and compared against each other. Based on our detailed studies and observations, we share important insights on future development of rate control mechanisms at the MAC-layer. This discussion also takes into account the recent developments in wireless technologies and emerging applications, such as Internet-of-Things, and shows issues that need to be addressed in the design of new rate control mechanisms suitable for these technologies and applications.
Nano Research - The continuous pursuit of miniaturization in the electronics and optoelectronics industry demands all device components with smaller size and higher performance, in which thin metal... 相似文献
Quantitatively mapping and monitoring the strain distribution in 2D materials is essential for their physical understanding and function engineering. Optical characterization methods are always appealing due to unique noninvasion and high‐throughput advantages. However, all currently available optical spectroscopic techniques have application limitation, e.g., photoluminescence spectroscopy is for direct‐bandgap semiconducting materials, Raman spectroscopy is for ones with Raman‐active and strain‐sensitive phonon modes, and second‐harmonic generation spectroscopy is only for noncentrosymmetric ones. Here, a universal methodology to measure the full strain tensor in any 2D crystalline material by polarization‐dependent third‐harmonic generation is reported. This technique utilizes the third‐order nonlinear optical response being a universal property in 2D crystals and the nonlinear susceptibility has a one‐to‐one correspondence to strain tensor via a photoelastic tensor. The photoelastic tensor of both a noncentrosymmetric D3h WS2 monolayer and a centrosymmetric D3d WS2 bilayer is successfully determined, and the strain tensor distribution in homogenously strained and randomly strained monolayer WS2 is further mapped. In addition, an atlas of photoelastic tensors to monitor the strain distribution in 2D materials belonging to all 32 crystallographic point groups is provided. This universal characterization on strain tensor should facilitate new functionality designs and accelerate device applications in 2D‐materials‐based electronic, optoelectronic, and photovoltaic devices. 相似文献