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Knapp H. Wurzer M. Perndl W. Aufinger K. Bock J. Meister T.F. 《Solid-State Circuits, IEEE Journal of》2005,40(10):2118-2125
This paper presents two monolithic pseudorandom bit sequence (PRBS) generators. One circuit uses a seven-stage shift register operating with a half-rate clock and provides output signals up to 100 Gb/s. The second circuit contains an eleven-stage shift register operating with a full-rate clock up to 54 Gb/s. Both PRBS generators provide a wide range of data rates down to below 1 Gb/s simply by changing the frequency of the external clock signal without the need of any further adjustments. The integrated circuits provide a trigger output which can be switched between eye and pattern display. Furthermore, they contain additional circuitry to guarantee automatic start after power-on. The circuits are manufactured in a 200-GHz f/sub T/ SiGe bipolar technology. They each have a chip size of 900/spl times/700 /spl mu/m/sup 2/ and consume 1.5 and 1.9 W, respectively. 相似文献
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A. L. Scholtz Ao. Univ.-Prof. Dipl.-Ing. Dr. techn. D. Kehrer Dipl.-Ing. Dr. techn. M. Tiebout Marc Dipl.-Ing. Dr. techn. H. -D. Wohlmuth Hans-Dieter Dipl.-Ing. Dr. techn. H. Knapp Dipl.-Ing. Dr. techn. M. Wurzer Dipl.-Ing. W. Perndl Dipl.-Ing. M. Rest C. Kienmayer Dipl.-Ing. R. Thüringer Dipl.-Ing. W. Bakalski Dipl.-Ing. W. Simbürger Dipl.-Ing. Dr. techn. 《e & i Elektrotechnik und Informationstechnik》2003,120(9):271-275
Recently, CMOS has been demonstrated to be a viable technology for very-high-bit-rate broad-band and wireless communication systems up to 40 Gb/s and 50 GHz. Advances in device scaling and doping-profile optimization have also resulted in SiGe bipolar transistors with impressive performance, including cut-off frequencies of more than 200 GHz. This paper presents advances in circuit design which fully exploit the high-speed potential of a 0.13 µm CMOS technology up to 50 GHz and of a high-performance SiGe bipolar technology up to 110 GHz operating frequency. The combination of advanced circuit techniques and a state-of-the-art fabrication-process technology results in continuing the upward shift of the frequency limits. 相似文献
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Perndl W. Knapp H. Aufinger K. Meister T.F. Simburger W. Scholtz A.L. 《Solid-State Circuits, IEEE Journal of》2004,39(10):1773-1777
In this paper, two fully integrated voltage-controlled oscillators (VCOs) in a 200-GHz f/sub T/ SiGe bipolar technology are presented. The oscillators use on-chip transmission lines at the output for impedance transformation. One oscillator operates up to 98 GHz and achieves a phase noise of -85dBc/Hz at an offset frequency of 1 MHz. It can be tuned from 95.2 to 98.4 GHz and it consumes 12 mA from a single -5-V supply. The second oscillator operates from 80.5 GHz up to 84.8 GHz with a phase noise of -87dBc/Hz at 1-MHz offset frequency. The output power of both circuits is about -6dBm. 相似文献
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