Two-channel constrained least squares problems: solutions using power methods and connections with canonical coordinates

The problem of two-channel constrained least squares (CLS) filtering under various sets of constraints is considered, and a general set of solutions is derived. For each set of constraints, the solution is determined by a coupled (asymmetric) generalized eigenvalue problem. This eigenvalue problem establishes a connection between two-channel CLS filtering and transform methods for resolving channel measurements into canonical or half-canonical coordinates. Based on this connection, a unified framework for reduced-rank Wiener filtering is presented. Then, various representations of reduced-rank Wiener filters in canonical and half-canonical coordinates are introduced. An alternating power method is proposed to recursively compute the canonical coordinate and half-canonical coordinate mappings. A deflation process is introduced to extract the mappings associated with the dominant coordinates. The correctness of the alternating power method is demonstrated on a synthesized data set, and conclusions are drawn.     

12 nm tunable WDM source using an integrated laser array

A 12 nm tunable source with up to 15 mW fibre coupled power has been fabricated by integrating four DFB lasers and a booster amplifier to provide a single output. High-yield and low-cost techniques are used, such as quarter-wave-shifted phase-masks for wavelength definition and an integration technique with only two regrowths     

400-mW single-frequency 660-nm semiconductor laser

Using an angled-grating broad-area structure in GaInP-AlInP material system, we obtain single spatial and longitudinal-mode operation at 660 nm. The grating stabilizes the mode to deliver over 400-mW continuous-wave at room temperature from a 60-μm-wide stripe. This is about ten times higher than conventional distributed-feedback power output levels, and is the highest single-frequency power from a monolithic semiconductor device in this wavelength range. These devices should be useful for single-mode-fiber coupling and in applications where high-wavelength stability is required, such as spectroscopy, interferometry, or metrology     

Investigation of high In content InGaAs quantum wells grown on GaAs by molecular beam epitaxy

Excitonic resonances and the quantum confined Stark effect are observed near 1.3 mu m in InGaAs quantum wells grown on GaAs using a slowly graded InGaAs buffer. The pin structure performs as a modulator with a relative transmission modulation of 12% at 1.3 mu m and as a low leakage photodetector.<>     

Generation of a CW Local Oscillator Signal Using a Stabilized Injection Locked Semiconductor Laser

We explore the technique of injection locking a semiconductor laser with a portion of the received optical signal to regenerate a local oscillator for eventual use with a homodyne receiver. In addition, we show that the injection locking process can be electronically stabilized by using the Modulation Transfer Ratio (MTR) of the slave laser as a monitor, given either a DFB or Fabry-Perot slave laser. We show that this stabilization technique maintains injection lock (given a locking range of ~1 GHz) for laser drift much greater than what is expected in a typical transmission system. In addition, we explore the quality of the output of the slave laser, and analyze its suitability as a local oscillator signal for a homodyne receiver.     

Non‐Lithographic Fabrication of All‐2D α‐MoTe2 Dual Gate Transistors

As one of the emerging new transition‐metal dichalcogenides materials, molybdenum ditelluride (α‐MoTe₂) is attracting much attention due to its optical and electrical properties. This study fabricates all‐2D MoTe₂‐based field effect transistors (FETs) on glass, using thin hexagonal boron nitride and thin graphene in consideration of good dielectric/channel interface and source/drain contacts, respectively. Distinguished from previous works, in this study, all 2D FETs with α‐MoTe₂ nanoflakes are dual‐gated for driving higher current. Moreover, for the present 2D dual gate FET fabrications on glass, all thermal annealing and lithography processes are intentionally exempted for fully non‐lithographic method using only van der Waal's forces. The dual‐gate MoTe₂ FET displays quite a high hole and electron mobility over ≈20 cm² V^?1 s^?1 along with ON/OFF ratio of ≈10⁵ in maximum as an ambipolar FET and also demonstrates high drain current of a few tens‐to‐hundred μA at a low operation voltage. It appears promising enough to drive organic light emitting diode pixels and NOR logic functions on glass.     

Determination of combined hardening material parameters under strain controlled cyclic loading by using the genetic algorithm method

In this paper, experimental and numerical investigations on mechanical behaviors of SS304 stainless steel under fully reversed strain-controlled, relaxation, ratcheting and multiple step strain-controlled cyclic loading have been performed. The kinematic and isotropic hardening theories based on the Chaboche model are used to predict the plastic behavior. An iterative method is utilized to analyze the mechanical behavior under cyclic loading conditions based on the Chaboche hardening model. A set of kinematic and isotropic parameters was obtained by using the genetic algorithm optimization approach. In order to analyze the effectiveness of this optimization procedure, numerical and experimental results for an SS304 stainless steel are compared. Finally, the results of this research show that by using the material parameters optimized based on the strain-controlled and relaxation data, good agreement with the experimental data for ratcheting is achieved.     

Homogeneous 2D MoTe2 p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping

Recently, α‐MoTe₂, a 2D transition‐metal dichalcogenide (TMD), has shown outstanding properties, aiming at future electronic devices. Such TMD structures without surface dangling bonds make the 2D α‐MoTe₂ a more favorable candidate than conventional 3D Si on the scale of a few nanometers. The bandgap of thin α‐MoTe₂ appears close to that of Si and is quite smaller than those of other typical TMD semiconductors. Even though there have been a few attempts to control the charge‐carrier polarity of MoTe₂, functional devices such as p–n junction or complementary metal–oxide–semiconductor (CMOS) inverters have not been reported. Here, we demonstrate a 2D CMOS inverter and p–n junction diode in a single α‐MoTe₂ nanosheet by a straightforward selective doping technique. In a single α‐MoTe₂ flake, an initially p‐doped channel is selectively converted to an n‐doped region with high electron mobility of 18 cm² V^?1 s^?1 by atomic‐layer‐deposition‐induced H‐doping. The ultrathin CMOS inverter exhibits a high DC voltage gain of 29, an AC gain of 18 at 1 kHz, and a low static power consumption of a few nanowatts. The results show a great potential of α‐MoTe₂ for future electronic devices based on 2D semiconducting materials.     

High-precision high-yield laser source using DFB array

We present high-yield efficient distributed-feedback lasers with excellent wavelength control. An array of 12 lasers with highly reflecting/antireflecting facets is fabricated on a single chip with precisely controlled variations in the grating period or phase relative to the facets. The stripe that best meets requirements is selected for bonding. From 200 unscreened chips, 93% contained lasers that achieved the specified power of 25 mW at 175 mA, 55/spl deg/C, and 41% achieved a /spl plusmn/0.1-nm wavelength tolerance at 25 mW, 55/spl deg/C. This low-cost high-precision device requires little thermal tuning for wavelength-division-multiplexed applications and reduces the power consumption of the transmitter.